6175 Nancy Ridge Drive, San Diego, CA 92121
Tel (858) 455-0660 Fax (858) 455-0770
http://www.peregrine-semi.com
Document 70/0037~01A
Product Description
The PE4210 Low Insertion Loss MOSFET RF Switch is
designed to cover a broad range of uses in the 50MHz through
2.5 GHz frequency range. This switch integrates on board
CMOS control logic and eliminates the need for a negative
voltage supply. The control inputs are both CMOS and TTL
compatible.
The PE4210 Low Insertion Loss MOSFET RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Functional Schematic Diagram
Electrical Specifications @ +25°°C
Advance Information
PE4210
SPDT Low Insertion Loss
MOSFET RF Switch
Features
• Single 3.0 V Power Supply
• Low Insertion loss:
. 39dB at 1 GHz, .42dB at 2 GHz
•
High isolation of 32 dB at 1 GHz, 26 dB at 2 GH
• Typical1 dB compression = +10dBm
• CMOS logic control
• Low Cost
Package Drawings
8 lead MSOP
Parameter Condition Minimum Typical Maximum Units
Insertion Loss 1000 MHz
2000 MHz .39
.42 dB
dB
Isolation 1000 MHz
2000 MHz 32
26 dB
dB
Return Loss 1000 MHz
2000 MHz
20
14 dB
dB
Switching Time
Full Cycle Switching Time 500
1 ns
µµs
Input 1 dB Compression
2000MHz
10
dBm
Common
RF2
RF1
Control
8 Lead
MSOP
5.05
4.75
3.05
2.85
PE4210 Advance Information
6175 Nancy Ridge Drive, San Diego, CA 92121
Tel (858) 455-0660 Fax (858) 455-0770
http://www.peregrine-semi.com
Document 70/0037~01A
DC Electrical Specifications
Control Logic Truth Table
Typical Performance Data @ +25°°C
Parameter Minimum Typical Maximum Units
VDD Power Supply Voltage 2.7 3.0 3.3 V
Power Supply Current <1 µµA
Control Votage High 2.0 V
Control Voltage Low
0.8
V
Control Voltage Signal Path
CTRL = High RFCommon to RF1
Low
RFCommon to RF2
IL(dB) PE4210
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
000.5 11.5 22.5 3
Frequency (GHz)
Insertion Loss (dB)
IL(dB)
IS(dB) PE4210
-60
-50
-40
-30
-20
-10
000.5 11.5 22.5 3
Frequency (GHz)
Isolation (dB)
IS(dB)
PE4210 Advance Information
6175 Nancy Ridge Drive, San Diego, CA 92121
Tel (858) 455-0660 Fax (858) 455-0770
http://www.peregrine-semi.com
Document 70/0037~01A
Pin Configuration
Pin Descriptions
Pin # Pin Name Description
1 VDD Nominal 3V supply connection. A bypass capacitor to the
ground plane should be placed as close as possible to the pin
2 CTRL CMOS or TTL logic level:
High = COMM to RF1 signal path
Low = COMM to RF2 signal path
3 GND Ground connection
4 RFCommon Common RF port for switch (Note 1)
5 RF2 RF2 port (Note 1)
6 GND Ground connection
7 GND Ground connection
8 RF1 RF1 port (Note 1)
Note 1: All RF pins must be DC blocked with an external capacitor.
Absolute Maximum Ratings
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the same precautions that you would use with other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid
exceeding the rating specified in Table .
Latch-up Avoidance
Unlike conventional CMOS devices, UTSi CMOS devices are immune to latch -up.
Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 4.0 V
VI Voltage on any input -0.3 VDD + 0.3 V
TST Storage temperature range -65 150 °C
TOP Operating temperature range -40 85 °C
VESD
ESD voltage (Human Body Model)
200
V
PE4210
1
2
3
4
8
7
6
5
CTRL
RFCommon
GND
RF1
GND
NC
VDD
GND
RF2
PE4210 Advance Information
6175 Nancy Ridge Drive, San Diego, CA 92121
Tel (858) 455-0660 Fax (858) 455-0770
http://www.peregrine-semi.com
Document 70/0037~01A
Ordering Information
Order Code Part Marking Description Package Shipping
Method
4210-21 4210
Datecode Screened to Commercial Flow 8 Lead
MSOP 50pcs./Tube
4210-22 4210
Datecode Screened to Commercial Flow 8 Lead
MSOP 2000pcs./T&R
4210-00 PE4210EK Evaluation Kit 1/Box
PE4210 Advance Information
6175 Nancy Ridge Drive, San Diego, CA 92121
Tel (858) 455-0660 Fax (858) 455-0770
http://www.peregrine-semi.com
Document 70/0037~01A
Sales Offices
United States
Peregrine Semiconductor Corp.
6175 Nancy Ridge Drive
San Diego, CA 92121
Tel (858) 455-0660
Fax (858) 455-0770
Europe
Peregrine Semiconductor Europe
Aix-En-Provence office
Parc Club du Golf, bat 9
13856 Aix-En-Provence Cedex 3
France
Tel +33 (0)4 4239-3360
Fax +33 (0)4 4239 7227
For a list of representatives in your area,
please refer to our website at
www.peregrine-semi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The
data sheet contains design target specifications for
product development. Specifications and features
may change in any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional
data may be added at a later date. Peregrine
reserves the right to change specifications at any
time without notice in order to supply the best
possible product.
Product Specification
The data sheet contains final data. In the event
Peregrine decides to change the specifications,
Peregrine will notify customers of the intended
changes by issuing a PCN (Product Change Notice).
The information in this data sheet is believed to be
reliable. However, Peregrine assumes no liability for
the use of this information. Use shall be entirely at
the user’s own risk.
No patent rights or licenses to any circuits described
in this data sheet are implied or granted to any third
party.
Peregrine’s products are not designed or intended
for use in devices or systems intended for surgical
implant, or in other applications intended to support
or sustain life, or in any application in which the
failure of the Peregrine product could create a
situation in which personal injury or death might
occur. Peregrine assumes no liability for damages,
including consequential or incidental damages,
arising out of the use of its products in such
applications.
Peregrine products are protected under one or more
of the following US patents: 5,416,043; 5,600,169;
5,572,040; 5,492,857; 5,663,570; 5,596,205; 5,610,790.
Other patents may be pending or applied for.