Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features * Single 3.0 V Power Supply * Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz * High isolation of 32 dB at 1 GHz, 26 dB at 2 GH * Typical1 dB compression = +10dBm * CMOS logic control * Low Cost Product Description Package Drawings The PE4210 Low Insertion Loss MOSFET RF Switch is designed to cover a broad range of uses in the 50MHz through 2.5 GHz frequency range. This switch integrates on board CMOS control logic and eliminates the need for a negative voltage supply. The control inputs are both CMOS and TTL compatible. 8 lead MSOP 3.05 2.85 8 Lead MSOP The PE4210 Low Insertion Loss MOSFET RF Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 5.05 4.75 Functional Schematic Diagram RF1 Common Control RF2 Electrical Specifications @ +25 C Parameter Insertion Loss Isolation Return Loss Switching Time Full Cycle Switching Time Input 1 dB Compression Condition 1000 MHz 2000 MHz 1000 MHz 2000 MHz 1000 MHz 2000 MHz 2000MHz Minimum Typical .39 .42 32 26 20 14 500 1 10 Maximum Units dB dB dB dB dB dB ns s dBm 6175 Nancy Ridge Drive, San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 http://www.peregrine-semi.com Document 70/0037~01A PE4210 Advance Information DC Electrical Specifications Parameter Minimum Typical Maximum Units 2.7 3.0 3.3 V VDD Power Supply Voltage Power Supply Current A <1 Control Votage High 2.0 V Control Voltage Low 0.8 V Control Logic Truth Table Control Voltage Signal Path CTRL = High RFCommon to RF1 CTRL = Low RFCommon to RF2 Typical Performance Data @ +25 C IL(dB) PE4210 0 0 0.5 1 1.5 2 2.5 3 -0.1 -0.2 Insertion Loss (dB) -0.3 -0.4 -0.5 IL(dB) -0.6 -0.7 -0.8 -0.9 -1 Frequency (GHz) IS(dB) PE4210 0 0 0.5 1 1.5 2 2.5 3 -10 Isolation (dB) -20 -30 IS(dB) -40 -50 -60 Frequency (GHz) 6175 Nancy Ridge Drive, San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 http://www.peregrine-semi.com Document 70/0037~01A PE4210 Advance Information Pin Configuration VDD 1 8 RF1 CTRL 2 7 GND NC GND 3 6 GND RFCommon 4 5 RF2 PE4210 Pin Descriptions Pin # Pin Name 1 VDD 2 CTRL 3 4 5 6 7 8 GND RFCommon RF2 GND GND RF1 Description Nominal 3V supply connection. A bypass capacitor to the ground plane should be placed as close as possible to the pin CMOS or TTL logic level: High = COMM to RF1 signal path Low = COMM to RF2 signal path Ground connection Common RF port for switch (Note 1) RF2 port (Note 1) Ground connection Ground connection RF1 port (Note 1) Note 1: All RF pins must be DC blocked with an external capacitor. Absolute Maximum Ratings Symbol Parameter/Conditions VDD VI TST TOP VESD Power supply voltage Voltage on any input Storage temperature range Operating temperature range ESD voltage (Human Body Model) Min Max Units -0.3 -0.3 -65 -40 200 4.0 VDD + 0.3 150 85 V V C C V Electrostatic Discharge (ESD) Precautions When handling this UTSi device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table . Latch-up Avoidance Unlike conventional CMOS devices, UTSi CMOS devices are immune to latch-up. 6175 Nancy Ridge Drive, San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 http://www.peregrine-semi.com Document 70/0037~01A PE4210 Advance Information Ordering Information Order Code Part Marking Description Package Shipping Method 4210-21 4210 Datecode Screened to Commercial Flow 8 Lead MSOP 50pcs./Tube 4210-22 4210 Datecode Screened to Commercial Flow 8 Lead MSOP 2000pcs./T&R 4210-00 PE4210EK Evaluation Kit 1/Box 6175 Nancy Ridge Drive, San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 http://www.peregrine-semi.com Document 70/0037~01A PE4210 Advance Information Sales Offices United States Peregrine Semiconductor Corp. 6175 Nancy Ridge Drive San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 Europe Peregrine Semiconductor Europe Aix-En-Provence office Parc Club du Golf, bat 9 13856 Aix-En-Provence Cedex 3 France Tel +33 (0)4 4239-3360 Fax +33 (0)4 4239 7227 For a list of representatives in your area, please refer to our website at www.peregrine-semi.com Data Sheet Identification Advance Information The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a PCN (Product Change Notice). The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Peregrine products are protected under one or more of the following US patents: 5,416,043; 5,600,169; 5,572,040; 5,492,857; 5,663,570; 5,596,205; 5,610,790. Other patents may be pending or applied for. 6175 Nancy Ridge Drive, San Diego, CA 92121 Tel (858) 455-0660 Fax (858) 455-0770 http://www.peregrine-semi.com Document 70/0037~01A