Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
-IC pulse
PC
Tj
Tstg
Viso
6MBI150U2B-060 IGBT Modules
IGBT MODULE (U series)
600V / 150A
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
I
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Continuous
1ms
1 device
AC : 1 minute
600
±20
150
300
150
300
500
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
W
°C
°C
V
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
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VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V
Ic=150A
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=150A
VGE=±15V
RG= 24 Ω
VGE= 0 V
IF=150A
IF=150A
T=25°C
T=100°C
T=25/50°C
- - 1.0
- - 200
6.2 6.7 7.7
- 2.30 2.60
- 2.55 -
- 1.80 -
- 2.05 -
-12 -
- 0.40 1.20
- 0.22 0.60
- 0.16 -
- 0.48 1.20
- 0.07 0.45
- 2.10 2.45
- 2.15 -
- 1.60 -
- 1.65 -
- - 0.35
- 3.4 -
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time of FRD
Lead resistance, terminal-chip *
Resistance
B value
Thermistor Inverter
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
IGBT
FWD
With thermal compound
- - 0.25
- - 0.48 °C/W
- 0.05 -
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
- 5000 -
465 495 520
3305 3375 3450
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
6MBI150U2B-060
UV W
1
2
3
4
5
6
7
8
9
10
11
12
13,14,15
16,17,18
21,22,2324,25,26
19 20
27,28,29
30,31,32
33,34,35
* Biggest internal terminal resistance among arm.
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IGBT Module 6MBI150U2B-060
Characteristics (Representative)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=150A, Tj= 25°C
0
100
200
300
400
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V15V 12V
10V
8V
0
100
200
300
400
01234
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
Tj=125°CTj=25°C
0
2
4
6
8
10
5 10152025
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=300A
Ic=150A
Ic= 75A
0.1
1.0
10.0
100.0
0102030
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
400
500
0 200 400 600 800
0
5
10
15
20
25
Collector-Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
VGE
VCE
Gate - Emitter voltage : VGE [ V ]
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IGBT Module 6MBI150U2B-060
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 24Ω ,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω, Tj= 25°C
Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω, Tj=125°C
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω
Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
10
100
1000
10000
0 50 100 150 200 250 300
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0 50 100 150 200 250 300
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
1 10 100
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
5
10
15
0 100 200 300
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
5
10
15
20
1 10 100
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
100
200
300
400
0 200 400 600 800
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
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IGBT Module 6MBI150U2B-060
Transient thermal resistance (max.)
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=24Ω
Forward current vs. Forward on voltage (typ.)
chip
Temperature characteristic (typ.)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
Resistance : R [ kΩ ]
0
100
200
300
400
0123
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125°C
Tj=25°C
10
100
1000
0 100 200 300
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
0.01
0.10
1.00
10.00
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
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IGBT Module 6MBI150U2B-060
( ) shows reference dimension.
Outline Drawings, mm
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