6MBI150U2B-060 IGBT Modules IGBT MODULE (U series) 600V / 150A Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) I Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque Symbol VCES VGES IC ICP -IC -IC pulse PC Tj Tstg Viso Condition Continuous 1ms 1 device AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. http://store.iiic.cc/ Rating 600 20 150 300 150 300 500 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A W C C V V N*m 6MBI150U2B-060 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Thermistor Reverse recovery time of FRD Lead resistance, terminal-chip * Resistance R lead R VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=150mA Tj=25C VGE=15V Tj=125C Ic=150A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz V CC=300V IC=150A VGE=15V RG= 24 Tj=25C Tj=125C Tj=25C Tj=125C VGE= 0 V IF=150A IF=150A T=25C T=100C T=25/50C B B value Condition Min. 6.2 - Characteristics Typ. Max. 1.0 200 6.7 7.7 2.30 2.60 2.55 1.80 2.05 12 0.40 1.20 0.22 0.60 0.16 0.48 1.20 0.07 0.45 2.10 2.45 2.15 1.60 1.65 0.35 3.4 - 465 3305 5000 495 3375 520 3450 Unit mA nA V V nF s V s m K * Biggest internal terminal resistance among arm. Thermal resistance Characteristics Item Symbol Condition Characteristics Typ. Max. Min. IGBT FWD Contact thermal resistance * Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Thermal resistance ( 1 device ) Rth(j-c) - 0.05 0.25 0.48 - Equivalent Circuit Schematic 16,17,18 30,31,32 1 2 5 6 U 27,28,29 3 4 9 10 V 24,25,26 7 8 W 21,22,23 11 12 33,34,35 13,14,15 http://store.iiic.cc/ 19 20 Unit C/W 6MBI150U2B-060 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 400 400 VGE=20V15V Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 12V 300 10V 200 12V 300 10V 200 100 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 5 Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] Tj=25C Tj=125C 300 200 100 0 8 6 4 Ic=300A Ic=150A Ic= 75A 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 15 20 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25C Vcc=300V, Ic=150A, Tj= 25C Cies 10.0 Cres Coes 500 25 400 20 300 15 [V] Collector-Emitter voltage : VCE [ V ] 100.0 1.0 25 VGE 200 10 100 5 VCE 0 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 0 200 400 600 Gate charge : Qg [ nC ] http://store.iiic.cc/ 800 Gate - Emitter voltage : VGE Collector current : Ic [A] 4 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 400 Capacitance : Cies, Coes, Cres [ nF ] 3 Collector-Emitter voltage : VCE [V] 6MBI150U2B-060 IGBT Module Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj= 25C Vcc=300V, VGE=15V, Rg=24, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 0 50 100 150 200 250 50 100 150 200 250 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 25C Vcc=300V, VGE=15V, Rg=24 300 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 1000 ton toff tr 100 tf Eoff(125C) Eon(125C) Eoff(25C) 10 Eon(25C) 5 Err(125C) Err(25C) 10 0 1 10 100 0 Gate resistance : Rg [ ] 100 200 300 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=300V, Ic=150A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 24 ,Tj <= 125C 20 400 15 300 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] tf 0 300 10000 Switching time : ton, tr, toff, tf [ nsec ] 100 10 10 10 Eoff 5 toff ton tr 1000 Eon 200 100 Err 0 0 1 10 100 Gate resistance : Rg [ ] 0 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Module 6MBI150U2B-060 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=300V, VGE=15V, Rg=24 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 300 Tj=25C Tj=125C 200 100 trr (125C) trr (25C) 100 Irr (125C) Irr (25C) 10 0 0 1 2 0 3 100 Forward on voltage : VF [ V ] 100 Resistance : R [ k ] 10.00 Thermal resistanse : Rth(j-c) [ C/W ] 300 Temperature characteristic (typ.) Transient thermal resistance (max.) 1.00 FWD IGBT 0.10 0.01 0.001 200 Forward current : IF [ A ] 10 1 0.1 0.010 0.100 1.000 -60 -40 -20 Pulse width : Pw [ sec ] 0 20 40 60 80 100 120 140 160 180 Temperature [C ] http://store.iiic.cc/ 6MBI150U2B-060 IGBT Module Outline Drawings, mm ( http://store.iiic.cc/ ) shows reference dimension.