Sep. 2000
CM200TU-5F
APPLICATION
Inverters for battery power source
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
¡IC...................................................................200A
¡VCES ............................................................250V
¡Insulated Type
¡6-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
P
N
G
U
P
E
U
P
G
U
N
U
E
U
N
G
V
P
E
V
P
G
V
N
V
E
V
N
G
W
P
E
W
P
G
W
N
W
E
W
N
GuN
EuN
GvN
EvN
GwN
EwN
GuP
EuP
GvP
EvP
GwP
EwP
E
GGG
GGGEE
EEE
UVW
P
N
CM
2.8
7.1
4
12 (4)
12
26 8.1
11 21.7 11 21.7 11
23
0.8
14.411 21.7 11 21.7 11
107
12
23
12 12
23
90
±0.25
80
±0.25
102
48.5 17 3.75
3.75
4–φ5.5
MOUNTING HOLES
5–M5NUTS
LABEL
29
0.5
+1
–0.5
CIRCUIT DIAGRAM
Tc measured point
Tc measured point
Sep. 2000
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
1
0.5
1.7
—
55
3.5
1.9
—
600
300
900
500
250
—
2.0
0.21
0.47
—
0.16
mA
µA
nF
nC
µC
V
°C/W
—
—
1.2
1.1
—
—
—
1500
—
—
—
—
—
10.0
—
—
—
0.09
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0 V
V
ns
3.0 5.0
ns
250
±20
200
400
200
400
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
V
V
W
°C
°C
V
N • m
N • m
g
A
A
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 100V, IC = 200A, VGE = 10V
VCC = 100V, IC = 200A
VGE1 = VGE2 = 10V
RG = 13Ω, Inductive load switching operation
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied*2 (1/6 module)
Tc measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 10V
VCE = 10V
VGE = 0V
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance*3
Gate-emitter threshold voltage
Collector to emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
MAXIMUM RATINGS (Tj = 25°C)
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Test conditions
