RB450F
Diodes
Rev.B
1/3
Symbol Unit
V
RM
V
V
R
V
Io mA
I
FSM
A
Tj
Tstg
torage temperature -40 to +125
orward current surge peak 60Hz1cyc1
unction temperature 125
everse voltage (DC) 40
erage recti f ied for war d c ur r ent 100
Parameter Limits
ev e rse v oltage (repetitiv e pea k) 45
S
F
J
R
Av
R
Schottky barrier diode
RB450F
zApplications
Low current rectificaton
zFeatures
1) Small mold type. (UMD3)
2) Low I
R
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
z Land size figure (Unit : mm)
zStructure
JEDEC : SOT-323
ROHM : UMD3
JEITA : SC-70
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.3±0.1
各リードとも
同寸
(3)
1.3±0.1
(0.65) (0.65)
(2) (1)
0.15±0.05
0.9±0.1
0.7±0.1
0.1Min
0~0.1
Eac h lead has s am e dim ens ion
UMD3
0.9MIN.
0.8MIN.
1.6
0.65
1.3
z
Taping specifications(Unit : mm)
4.0±0.1
4.0±0.1 2.0±0.05 φ1.55±0.05
zAbsolute maximum ratings (Ta=25°C)
zElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF--0.45V
IF=10mA
IR--1µA
VR=10V
Ct - 6.0 - pF VR=10V , f=1MHzCapacitan ce between terminal
verse current
Parameter
orward voltage
Re
F
3.5±
8.0±0.
0.05 1.75±0.1
2
φ0.5±0.05
2.4±0.1
2.25±0.1
     0
5.5±0.2
1.25±0.1
2.4±0.1
0.3±0.1
0~0.1
RB450F
Diodes
Rev.B
2/3
zElectrical characteristic curves (Ta=25°C)
mV)
:VF(
TAGE
OL
ARD V
ORW
F
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
0 102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1
10
100
0102030
f=1MHz
350
360
370
380
390
400
Ta=25℃
IF=10mA
n=30pcs
AVE:370.2mV
0
100
200
300
400
500
600
700
800
900
1000
Ta=25℃
VR=10V
n=30pcs
AVE:88.62nA
0
2
4
6
8
10
12
14
16
18
20
AVE:5.81pF
Ta=25℃
f=1MHz
VR=10V
n=10pcs
0
5
10
15
20
AVE:5.5A
8.3ms
Ifsm 1cyc
0
5
10
15
0.1 1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
0.1 1 10 100
t
Ifsm
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IF=100mA
300us
t
ime
Mounted on epoxy boar
d
0
0.02
0.04
0.06
0.08
0.1
00.10.2
Sin(θ=180)
D=1/2 DC
0
0.001
0.002
0.003
0102030
D=1/2
DC
Sin(θ=180)
RB450F
Diodes
Rev.B
3/3
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
0
0.05
0.1
0.15
0.2
0.25
0.3
0 25 50 75 100 125
Sin(θ=180)
D=1/2
DC TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
0
0.05
0.1
0.15
0.2
0.25
0.3
0255075100125
Sin(θ=
)
DC
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.