EMP112-P10 - Excelics Semiconductor, Inc.

EMP112-P10

UPDATED 11/10/2005 5.0 – 7.2 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2005

FEATURES

• 5.0 – 7.2 GHz Operating Frequency Range

• 30.0dBm Output Power at 1dB Compression

• 19.0 dB Typical Small Signal Gain

• -41dBc OIMD3 @Each Tone Pout 20 dBm

• Low Cost Ceramic Package

APPLICATIONS

• Point-to-point and point-to-multipoint radio

• Military Radar Systems Caution! ESD sensitive dev i ce.

ELECTRICAL CHARACTERISTICS

(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 800 mA, Unless Otherwise Specified)

SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS

F Operating Frequency Range 5.0 7.2 GHz

P1dB Output Power at 1dB Gain Compression 28.5 30.0 dBm

Gss Small Signal Gain 17.0 20.0 dB

OIMD3 Output 3rd Order Intermodulation Distortion

@∆f=10MHz, Each Tone Pout 20dBm,

7V, 60%+10%Idss

-41 -38 dBc

Input RL Input Return Loss -12 -8 dB

Output RL Output Return Loss -5 dB

Idss Saturated Drain Current Vds =3V, VGS =0V 980 1140 1350 mA

Vds Drain to Source Voltage 7 8 V

NF Noise Figure @6GHz 10 dB

Tb Operating Base Plate Temperature - 35 + 85 ºC

MAXIMUM RATINGS AT 25°C1,2

SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS

Vds Drain to Source Voltage 12V 8 V

VGS Gate to Source Voltage -8V - 4 V

Ids Drain Current Idss 1300mA

IGSF Forward Gate Current 114mA 19 mA

PIN Input Power 27dBm @ 3dB compression

TCH Channel Temperature 175°C 150°C

TSTG Storage Temperature -65/175°C -65/150°C

PT Total Power Dissipation 12.4W 10.4W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH