LESHAN RADIO COMPANY, LTD.
O3–1/1
1
3
2
MMBT1010LT1
MSD1010T1
CASE 318–08, STYLE 6
SOT– 23
MAXIMUM RATINGS (T A = 25°C)
Rating Symbol Value Unit
Collector-Base V oltage V (BR)CBO 45 Vdc
Collector-Emitter V oltage V (BR)CEO 15 Vdc
Emitter-Base V oltage V (BR)EBO 5.0 Vdc
Collector Current — Continuous I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P D (1) 250 mW
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Junction Temperature T J 150 °C
Storage Temperature Range T stg –55 —+150 °C
DEVICE MARKING
MMBT1010LT1 = GLP; MSD1010T1 = GLP
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Condition Min Max Unit
Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10 mA, I B = 0 15 — Vdc
Emitter-Base Breakdown V oltage V (BR)EBO I E = 10 µA,I E = 0 5.0 — Vdc
Collector-Base Cutoff Current I CBO V CB = 20 V, I E = 0 — 0.1 µA
Collector-Emitter Cutoff Current I CEO V CE = 10 V, I B = 0 — 100 µA
DC Current Gain h FE1 (2) V CE = 5 V,I C = 100 mA 300 600 —
Collector-Emitter Saturation V oltage V CE(sat)(2) I C = 10 mA, I B = 1.0 mA — 0.1 Vdc
I C = 50 mA, I B = 5.0 mA — 0.1
I C = 100 mA, I B = 10 mA 0.19
Base-Emitter Saturation V oltage V BE(sat)(2) I C = 100 mA, I B = 10 mA — 1.1 Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width
<
300 µs, D.C
<
2%.
Low Saturation Voltage
PNP Silicon Driver T ransistors
Part of the GreenLineTM Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar T ransistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount applications.
• Low V CE(sat) , < 0.1 V at 50 mA
Applications
• LCD Backlight Driver
• Annunciator Driver
• General Output Device Driver
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
1
3
2
CASE 318D –04, STYLE 1
SC– 59
EMITTER
COLLECTOR
BASE
