T4-LDS-0279-1, Rev. 1 (121565) ©2012 Microsemi Corporation Page 1 of 4
1N914UR
Availa ble on
commercial
version
Glass MELF Switching Diode
Qualified per MIL-PRF-19500/116
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This popular 1N914UR JEDEC registered switching/signal diode features internal
metallurgical bonded construction for military grade products per MIL-PRF-19500/116.
Previously listed as a CDLL914 this small low capacitance diode, with very fast switching
speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be
used in a variety of very high speed applications including switchers, detectors, transient
OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi
also offers a variety of other switching/signal diodes.
DO-213AA
Package
Also available in:
DO-35 package
(axial-leaded)
1N914
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of popular JEDEC registered 1N914 number.
• Hermetically sealed glass construction.
• Metallurgically bonded.
• Double plug cons tr uc tion .
• Very low capacitance.
• Very fast switching speeds with minimal reverse recovery times.
• JAN, JANTX, and JANTXV qualification is av aila b le per MIL-PRF-19500/116.
(See part nomenclature for all available options.)
• RoHS compliant version available (commercial grade only).
APPLICATIONS / BENEFITS
• High frequency data lines.
• Small size for high density mounting using the surface mount method (see package illustration).
• RS-232 & RS–422 interface networks.
• Ethernet 10 Base T.
• Low-capac itan ce ste er ing diod es.
• LAN.
• Computers.
MAXIMUM RATINGS @ 25 ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ & TSTG
-65 to +175
oC
Thermal Resi stan ce Jun cti on-to-Ambient (1)
RӨJA
325
oC/W
Thermal Resi stan ce Jun cti on-to-Endcap (2)
RӨJEC
100
oC/W
Maximum Breakdown Voltage
V(BR)
100
V
Working Peak Reverse Voltage
VRWM
75
V
Average Rectified Current @ TA = 75 ºC (3)
IO
200
mA
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
IFSM
2
A (pk)
NOTES: 1. TA = +75°C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, i n still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); RӨJA with a defined PCB
thermal resistance condition included, is measured at IO = 200 mA dc.
2. See Fi gure 2 for thermal impedance curves.
3. See Figure 1 for derating.
T4-LDS-0279-1, Rev. 1 (121565) ©2012 Microsemi Corporation Page 2 of 4
1N914UR
• CASE: Hermetically sealed glass case package.
• TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
• POLARITY: Cathode end is banded.
• MOUNTING: The axial coeffic ient of expansion (COE) of thi s device is approximately +6PPM/°C. The COE of the mounting
surface system should be selected to provide a suitable match with this device.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 0.2 grams.
• See Package Dimensions on last page.
JAN 1N914 UR (e3)
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
MELF Surface Mount
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IO
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
VF Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
FORWARD
VOLTAGE
VF1 @
IF=10 mA
FORWARD
VOLTAGE
VF2 @
IF=50 mA
REVERSE
RECOVERY
TIME
trr
(Note 1)
FORWARD
RECOVERY
TIME
tfr
(Note 2)
REVERSE
CURRENT
IR1 @ 20 V
REVERSE
CURRENT
IR2 @ 75 V
REVERSE
CURRENT
IR3
@ 20 V
TA=150
o
C
REVERSE
CURRENT
IR4
@ 75 V
TA=150
o
C
CAPACI-
TANCE
C
(Note 3)
CAPACI-
TANCE
C
(Note 4)
V
V
ns
ns
nA
µA
µA
µA
pF
pF
0.8 1.2 5 20 25 0.5 35 75 4.0 2.8
NOTE 1: IF = IR = 10 mA, RL = 100 Ohms. NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk).
NOTE 2: IF = 50 mA. NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk).
T4-LDS-0279-1, Rev. 1 (121565) ©2012 Microsemi Corporation Page 3 of 4
1N914UR
TA (ºC) (Ambient)
FIGURE 1 – Temperature – Current Derating
Time (s)
FIGURE 2 – Thermal Impedance
DC Operation Maximum Io Rating (mA)
Theta (°C/W)
T4-LDS-0279-1, Rev. 1 (121565) ©2012 Microsemi Corporation Page 4 of 4
1N914UR
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
DIM
INCH
MILLIMETERS
MIN
MAX
MIN
MAX
BD
0.063
0.067
1.60
1.70
BL
0.130
0.146
3.30
3.71
ECT
0.016
0.022
0.41
0.56
S
.001 min
0.03 min
INCH
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03