TLP621,TLP621−2,TLP621−4
2017-12-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP621,TLP621−2,TLP621−4
Programmable Controller
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP621−2 offers two isolated channels in an eight lead plastic DIP,
which the TLP621−4 provides four isolated channels in a sixteen plastic
DIP.
• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage : 5000Vrms(min)
• UL recognized: UL1577, file No. E67349
• cUL approved: CSA Component Acceptance Service No.5A,
file No. E67349
• Option (D4) type VDE approved : DIN EN60747-5-5 (Note 1)
(Note 1) When an EN60747-5-5 approved type is needed,
please designate “Option (D4).”
Pin Configurations (top view)
TLP621
TLP621-2
TLP621-4
1
1
1
2
2
2
4
4
4
3
3
3
5
5
6
6
7
8
7
8
9
10
11
12
13
14
15
16
1: Anode
2: Cathode
3: Emitter
4: Collector
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
7.62 mm pitch 10.16 mm pitch
standard type TLPxxxF type
• Creepage distance : 6.4 mm (min.) 8.0 mm (min)
Clearance : 6.4 mm (min.) 8.0 mm (min)
Insulation thickness : 0.4 mm (min.) 0.4 mm (min)
TOSHIBA
11−5B2
Weight: 0.26 g (typ.)
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
TOSHIBA
11−20A3
Weight: 1.1 g (typ.)
Unit: mm
Start of commer cial production
1983/02
TLP621,TLP621−2,TLP621−4
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● Current Transfer Ratio
Type Classi−
fication
*1
Current Transfer Ratio
(%) (IC / IF)
Marking Of
Classification
IF = 5mA, VCE = 5V, Ta = 25°C
Min.
Max.
TLP621
(None) 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL,B
Rank GB 100 600 GB, GR, G, G■, BL, B
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 400 B
TLP621−2
TLP621−4 (None) 50 600 Blank, GR, BL, GB
Rank GB 100 600 GB, GR, BL
*1: Ex. rank GB: TLP621 (GB)
(Note) Application type name for certif ication test, please use standard product type name, i.e.
TLP621 (GB): TLP621
TLP621−2 (GB): TLP621−2
TLP621,TLP621−2,TLP621−4
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
TLP621
TLP621−2
TLP621−4
LED
Forward current IF 60 50 mA
Forward current derating (Note 1) ΔIF /°C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Power dissipation PD 100 70 mW
Power dissipation derating ΔPD /°C −1.0 −0.7 mW /°C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation derating
(1 circuit, Ta ≥ 25°C) ΔPC /°C −1.5 −1.0 mW /°C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −55 to 100 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissipation PT 250 150 mW
Total package power dissipation derating
(Ta ≥ 25°C) ΔPT /°C −2.5 −1.5 mW /°C
Isolation voltage (Note 2) BVS 5000 (AC, 1min., R.H.≤ 60%) Vrms
Note: Using continuously under heavy loads (e.g. the appli cation of high t emperature/current/v oltage and the
significant c hange in tempera ture, etc.) m ay caus e this product to decrease in the r el iability significantly even if
the operatin g c onditions (i.e. operating t emperature/current/v oltage, etc.) are within the ab solute maximu m
ratings.
Please design the appropriate reliabili ty upon reviewing the Toshiba Semiconductor Reliability Handboo k
(“Handling Pr ecautions”/“Derating Concept and Meth ods”) and individual reliability data ( i.e. reliability test
report and estimated failur e rate, etc).
Note 1 : Pw = 100 μs(max), f = 100 Hz
Note 2 : Devic e c onsidered a two terminal: LE D side pins short ed together, and detector side p i ns shorted together.
Recommended Operating Condi t ions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C
Note: Recomm ended operating conditions are given as a des ign guideli ne to obtain expected perform ance of the
device. Additionally, e ac h i tem is an indep endent guideline respect i v ely. In devel oping desig ns using this
product, please confirm specified characteristics shown in this doc ument.
TLP621,TLP621−2,TLP621−4
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector−emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V
Emitter−collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V
Collector dark current ICEO VCE = 24 V — 10 100 nA
VCE = 24 V, Ta = 85 °C — 2 50 μA
Capacitance (collector
to emitter)
CCE V = 0 V, f = 1 MHz — 10 — pF
Coupled Electrical Character i stics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 50 — 600 %
100 — 600
Saturated CTR IC / IF (s a t) IF = 1 mA, VCE = 0.4 V Rank GB — 60 — %
30 — —
Collector−emitter
saturation voltage VCE (sat)
IC = 2.4 mA, IF = 8 mA — — 0.4
V
IC = 0.2 mA, IF = 1 mA Rank GB — 0.2 —
— — 0.4
Isolation Characteristi cs (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω
Isolation voltage BVS
AC, 1 minute 5000 — — Vrms
AC, 1 second, in oil — 10000 —
DC, 1 minute, in oil — 10000 — Vdc
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
— 2 —
μs
Fall time tf — 3 —
Turn−on time ton — 3 —
Turn−off time toff — 3 —
Turn−on time tON RL = 1.9 kΩ (Note 1)
VCC = 5 V, IF = 16 mA
— 2 —
μs
Storage time tS — 15 —
Turn−off time tOFF — 25 —
Note 1 Switchi ng time test ci r cuit
IF
RL
VCC
VCE
VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
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TLP621 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
0
-20
80
40
20
0 20 40 60 80 100
60
100
120
TLP621-2
TLP621-4 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
0
-20
60
40
0 20 40 60 80 100
80
20
120
TLP621 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
240
-20
40
160
0 60 100 120
0
80
200
120
20 40 80
TLP621-2
TLP621-4 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
120
0
-20
40
0 40
100
80
60
20
20 60 80 100 120
TLP621 IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10 10-3 10-2 10-1
30
300
100
1000
500
50
100
Pulse width ≤ 100μs
Ta = 25°C
TLP621-2
TLP621-4 IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
1000
500
300
100
50
30
10 10-3 10-2 100
Pulse width ≤ 100μs
Ta = 25°C
10-1
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ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV /°C)
1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1 0.3 3 10 30
ICEO – Ta
Ambient temperature Ta (°C)
Dark current ICEO (μA)
0 40 80 120 160
101
100
10-1
10-2
10-3
10-4
VCE = 24V
10V
5V
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
50
30
10
5
3
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
0.5
0.3
Ta = 25°C
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
500
300
100
0 0.4 0.8 1.2 1.6 2.0
50
30
10
5
3
1 2.4
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
80
60
40
20
0
0 2 4 8
6 10
50mA
30mA
20mA
15mA
10mA
IF = 5mA
PC (MAX.)
Ta = 25°C
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
25
20
15
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
50mA 40mA
30mA
20mA
10mA
5mA
IF = 2mA
5
Ta = 25°C
TLP621,TLP621−2,TLP621−4
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IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
500
300
100
50
30
10
5
0.3 1 3 10 30 100
Ta = 25°C
VCE = 5V
VCE = 0.4V
Sample B
Sample A
VCE (sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
Voltage VCE (sat) (V)
-20 0 20 40 60 80 100
0.20
0.16
0.12
0.08
0.04
0
IF = 5mA
IC = 1mA
Switchingtime – RL
Load resistance RL (kΩ)
Switching time (μs)
1000
500
300
30
100
50
10
1 3 10 30 100 300
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
IC – IF
Forward current IF (mA)
Collector current IC (mA)
100
50
30
10
5
3
0.5
0.3 1 3 10 30 100
Sample A
Sample B
1
0.3
0.1
0.05
0.03
Ta = 25°C
VCE = 5V
VCE = 0.4V
IC – Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
100
50
30
1
-20 0 20 40 80 100
25mA
10mA
5mA
1mA
IF = 0.5mA
10
5
3
0.5
0.3
0.1 60
VCE = 5V
TLP621,TLP621−2,TLP621−4
2017-12-25
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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
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