MCH6935
No.8039-1/6
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8039A
MCH6935 TR : PNP Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Power Management Switch
Applications
SANYO Semiconductors
DATA SHEET
Features
•Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density
mounting.
•Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage VCBO --30 V
Collector-to-Emitter Voltage VCEO --30 V
Emitter-to-Base Voltage VEBO --5 V
Collector Current IC--700 mA
Collector Current (Pulse) ICP --1.4 A
Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8mm) 0.5 W
Junction Temperature Tj 150 °C
[FET]
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current ID150 mA
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 600 mA
Allowable Power Dissipation PDMounted on a ceramic board (600mm2✕0.8mm) 0.5 W
Channel Temperature Tch 150 °C
[Common Rating]
Total Dissipation PTMounted on a ceramic board (600mm2✕0.8mm) 0.55 W
Storage Temperature Tstg --55 to +150 °C
Marking : EY
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
30707 TI IM TC-00000561 / 12805EA TS IM TB-00001164
MCH6935
No.8039-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[TR]
Collector Cutoff Current ICBO VCB=--30V, IE=0A --100 nA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --100 nA
DC Current Gain hFE VCE=--2V, IC=--10mA 200 500
Gain-Bandwidth Product fTVCE=--10V, IC=--50mA 520 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 4.7 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--200mA, IB=--10mA --110 --220 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--200mA, IB=--10mA --0.9 --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0A --30 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0A --5 V
Turn-ON Time ton See specified Test Circuit. 35 ns
Storage Time tstg See specified Test Circuit. 125 ns
Fall T ime tfSee specified Test Circuit. 25 ns
[FET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=80mA 0.15 0.22 S
RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω
RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω
Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF
Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns
Rise T ime trSee specified Test Circuit. 65 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 155 ns
Fall T ime tfSee specified Test Circuit. 120 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC
Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 1.2 V
Package Dimensions Electrical Connection
unit : mm (typ)
7022A-017
56
1
4
23
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
Top view
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
654
123
654
123
MCH6935
No.8039-3/6
[TR][TR]
[TR] [TR]
0
0
--200
--100
IC -- VCE
IT05049
IT05051
IT05050
--400
--300
--600
--500
--700
--200 --600--400 --800 --1000
--100 --500--300 --700 --900 0
0
IC -- VBE
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
--200
--800
--500
--700
--400
--300
--600
--100
3
100
hFE -- IC
--1.0 2357--10 23572357
--100 --1000
2
3
5
1000
7
5
7
IB=0µA
Ta=75°C
25°C
--25
°
C
--500µA
--1mA
--2mA
--5mA
--
3mA
--
7mA
--10mA
--15mA
--40mA
--50mA
--
30mA
--20mA
--25mA
VCE= --2V
VCE= --2V
Ta=75°C
25°C
--25
°
C
IT05054
--1.0
VCE(sat) -- IC
23 57
--10 23 57 23 57
--100 --1000
--1000
--100
2
3
5
7
2
3
5
7
--10
Ta=75
°
C
--25°C
25
°
C
IC / IB=20
[TR] [TR]
5
7
IT05055
VCE(sat) -- IC
--1.0 23 57
--10 23 57 23 57
--100 --1000
IT05056
VBE(sat) -- IC
3
--1.0
2
3
2
Ta=
--2
5
°
C
75
°
C
25°C
--1.0 23 57
--10 23 57 23 57
--100 --1000
--10
3
--1000
2
2
3
5
7
2
3
5
7
--100
Ta=75°C
--25
°
C
25
°
C
IC / IB=50 IC / IB=20
Collector Current, IC -- mA Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Voltage, VCE -- mV Base-to-Emitter Voltage, VBE -- V
Switching Time Test Circuit
VRRB
VCC= --12VVBE=5V
++
50Ω
INPUT
OUTPUT
RL
220µF 470µF
PW=20µsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2= --300mA
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=80mA
RL=187.5Ω
VDD=15V
VOUT
MCH6935
VIN
4V
0V
VIN
MCH6935
No.8039-4/6
0
0
0.1
0.2
PC -- Ta
IT06744
0.3
0.4
0.5
0.6
4020 100 12060 80 140 160
[TR] [TR]
[FET]
[FET] [FET]
[FET]
f=1MHz
--0.1
2
Ron -- IB
IT06403
2
10
7
5
3
2
7
5
3
1.0
3
32 57 32 57
--1.0 --10
OUT
IN 1kΩ
1kΩ
IB
0
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
ID -- VDS
VGS=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
00.5 1.0 1.5 2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5 3.0
ID -- VGS
VDS=10V
Ta=--25°C
25°C
75°C
IT00029 IT00030
0
012
1
34
2
56
3
4
5
6
7
8
9
10
78910
Ta=25°C
0.01 0.1
23 57 23 5
7
5
3
2
1.0
RDS(on) -- ID
--25°C
Ta=75°C
IT00031 IT00032
VGS=4V
ID=40mA
80mA
[TR] [TR]
IT05053
--1.0
2
Cob -- VCB
--10
2357235
3
5
7
10 f=1MHz
IT05052
2
fT -- IC
357 2357 2357
--10 --100 --1000
100
1000
5
7
2
3
VCE= --10V
Base Current, IB -- mA
ON-Resistance, Ron -- Ω
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
Mounted on a ceramic board(600mm
2
✕0.8mm)1unit
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
25°C
MCH6935
No.8039-5/6
[FET]
[FET][FET]
[FET] [FET]
[FET]
0.01 0.60.5 0.80.7 0.9 1.0 1.1 1.2
0.1
5
3
2
7
5
3
2
VGS=0V
IS -- VSD
--25°C
25
°
C
Ta=75
°C
0.01
10 0.1
23 57 2
5
100
7
5
3
2
3
2
SW Time -- ID
VDD=15V
VGS=4V
td(on)
tr
tf
td(off)
IT00037 IT00038
--60
1--40 --20 0 20
2
40 60
3
4
5
6
7
80 100 120 140 160
RDS(on) -- Ta
ID=40mA, VGS=2.5V
ID=80mA, VGS=4.0V
3
0.01 0.1
23 57 23 5
0.1
7
5
5
3
2
7
VDS=10V
yfs -- ID
75
°C
Ta=--25°C
IT00035 IT00036
0.01 0.1
23 57 23 5
10
1.0
7
5
3
2
RDS(on) -- ID
VGS=2.5V
2
0.001 0.01
23 57 23 5
3
10
7
5
3
2
RDS(on) -- ID
VGS=1.5V
Ta=75°C
--25°C
--25°C
25°C
Ta=75°C
IT00033 IT00034
25
°
C
[FET] [FET]
024681012 14 16 18 20
1.0
10
3
2
7
5
3
2
5
Ciss
Coss
Crss
f=1MHz
Ciss, Coss, Crss -- VDS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1
2
3
4
5
6
7
8
9
10
VGS -- Qg
VDS=10V
ID=150mA
IT00039 IT00040
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °CDrain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Drain Current, ID -- A
Switching Time, SW Time -- ns
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
25°C
MCH6935
No.8039-6/6
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
[Common]
0204060 100 120 140
080
0.5
0.6
0.55
0.4
0.3
0.2
0.1
160
Ambient Temperature, Ta -- °C
PT -- Ta
Total Dissipation, PT -- W
IT07146
Mounted on a ceramic board (600mm2✕0.8mm)
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
[FET]
0204060 100 120 140
080
0.5
0.6
0.4
0.3
0.2
0.1
160
IT01118
Mounted on a ceramic board (600mm
2
✕0.8mm)1unit
Note on usage : Since the MCH6935 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of March, 2 0 0 7. Specifications and information herein are subject
to change without notice.
