2SA1759
Transistors
Rev.B 1/3
High-volt age Switching Transistor
(Camera strobes and Telephone, Power supply)
(−400V, −0.1A)
2SA1759
zFeatures
1) High breakdown voltage. (BV
CEO
= −400V)
2) Low saturation voltage,
typical ly V
CE (sat)
= −0.2V at I
C
/ I
B
= −20mA / −2mA.
3) High switching speed, ty pically tf = 1 µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SC4 505.
zDimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4 1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0
zA bsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−400
−400
−7
−0.1
0.5
150
−55 to +150
Unit
V
V
V
A(DC)
−0.2 A(Pulse)
W
∗
1
∗
2
2
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
1 Single pulse, Pw=100ms
∗
2 When mounted on a 40
×
40
×
0.7 mm ceramic board.
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
−400
−400
−7
−
−
−
82
−
−
−
−
−
−
−
−0.2
−
12
13
−
−
−
−10
−10
−0.5
180
−
−
V
V
V
µA
µA
V
−
MHz
pF
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −400V
V
EB
= −6V
I
C
= −20mA, I
B
= −2mA
V
BE(sat)
−−−1.5 V I
C
= −20mA, I
B
= −2mA
V
CE
= −10V , I
C
= −10mA
V
CE
= −10V , I
E
=10mA , f=5MHz
V
CB
= −10V , I
E
=0A , f=1MHz
t
on
−0.7 −µsI
C
= −100mA R
L
=1.5kΩ
t
stg
−1.8 −µsI
B1
= −I
B2
= −10mA
t
f
−1−µsV
CC
~ −150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
2SA1759
Transistors
Rev.B 2/3
zPackaging specifications and h
FE
Type 2SA1759
MPT3
P
3000
T100
AH∗
∗
Denotes hFE
Package
hFE
Basic
ordering unit
(pieces)
Code
Marking
zElectrical characteristics (Ta=25°C)
012345
−20
−40
−60
−80
−100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
0
F
ig.1 Ground emitter output characteristics ( Ι
)
Ta=25
°C
I
B
=0
−0.5mA
−1mA
−2mA
−1.5mA
−5mA
−4.5mA −4mA−3.5mA
−3mA
−2.5mA
01020304050
−20
−40
−60
−80
−100
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V
)
0
F
ig.2 Ground emitter output characteristics ( ΙΙ
)
IB=−0.1mA
−0.2mA
−0.3mA
−0.4mA
−0.5mA
−0.6mA
−0.7mA
−0.8mA
−0.9mA
−1mA
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
1.40.4 0.6 0.8 1.0 1.20.20
−0.5
−1
−2
−5
−10
−20
−50
−100
−200
Ta=100
°C
25
°C
−25
°C
V
CE
=−5V
F
ig.3 Ground emitter propagation characterist
is
−0.5 −1−2−5−10 −20 −50 −100 −200
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(mA)
1
2
5
10
20
50
100
200
500
1000
F
ig.4 DC current gain vs.collector current ( Ι
)
Ta=25
°C
V
CE
=−10V
5V
0.5 1 2 5 10 20 50 100 20
0
2
10
20
50
100
200
500
5
1000
TRANSITION FREQUENCY : fT (MHz)
EMITTER CURRENT : IE (mA)
1
Fig.8 Gain bandwidth products
vs. emitter current
Ta=25
°C
VCE=−10V
−0.5 −1−2−5−10 −20 −50 −100 −200
DC CURRENT GAIN : hEF
COLLECTOR CURRENT : IC (mA)
1
2
5
10
20
50
100
200
500
1000
F
ig.5 DC current gain vs.collector current ( ΙΙ
)
VCE=−10V
−25°C
Ta=100°C25°C
−0.5 −1−2−5−10 −20 −50 −100 −20
0
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V
)
COLLECTOR CURRENT : I
C
(mA)
−0.01
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25
°C
I
C
/I
B
=20
10
−0.05 −0.1 −0.2 −0.5 −1−2−5−10 −20 −5
2
10
20
50
100
200
500
5
1000
COLLECTOR OUTPUT CAPACITANCE : C
ob
(p
COLLECTOR TO BASE VOLTAGE : V
CB
(V
1
Fig.9 Collector output capacitanc
vs. collector-base voltage
Ta=25
°C
f=1MHz
I
E
=0A
0.5 1 2 5 10 20 50 100 200
COLLECTOR SATURATION VOLTAGE :V
CE(sat)
(V
)
BASE SATURATION VOLTAGE :V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
−0.01
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
−5
−10
F
ig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage vs. Collector curre
nt
I
C
/
I
B
=10V
V
BE(sat)
V
CE(sat)
100
°C
25
°C
−25
°C
25
°C
Ta=−25
°C
Ta=100
°C
2SA1759
Transistors
Rev.B 3/3
−1−2−5−10 −20 −50
−100 −200 −500 −100
0
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V
)
−1
−2
−5
−10
−20
−50
−100
−200
−500
−1000
Fig.10 Safe operating area
Ta=25
°C
(When mounted on a
40×40×0.7mm ceramic board)
∗Single nonrepetitive pulse
Ic Max. (Pulse∗)
DC
Pw=10ms∗
100ms∗
0.001 0.01 0.1
0.1
1
10
100
1000
10000
100000
1 10 100 100
0
TRANSIENT THERMAL RESISTANCE : Rth
(°C/W)
PULSE WIDTH : Pw (s)
Fig.11 Transient thermal resistance
(1)When mounted on a
40×40×0.7mm ceramic board.
(2)Unmounted
(1)
(2)
V
BB
TUT
R
L
=1.5kΩ
V
CC
=−150V Collector current
waveform
Base current
waveform I
B2
90%
10%
I
B2
I
C
ton tf
t
stg
Fig.12 Switching characteristics mesurement circuits
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
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