FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE 75Ω
LOW CAPACITANCE 6pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114 2N5115 2N5116
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
BVGSS Gate to Source Breakdown Voltage 30 30 30 IG = 1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage 5 10 3 6 1 4 VDS = -15V, ID = -1nA
VGS(F) Gate to Source Forward Voltage -0.7 -1 -1 -1 IG = -1mA, VDS = 0V
-1.0 -1.3 VGS = 0V, ID = -15mA
-0.7 -0.8 VGS = 0V, ID = -7mA
VDS(on) Drain to Source On Voltage
-0.5 -0.6
V
VGS = 0V, ID = -3mA
-30 -90 VDS = -18V, VGS = 0V
IDSS Drain to Source Saturation Current2 -15 -60 -5 -25
mA VDS = -15V, VGS = 0V
IGSS Gate Leakage Current 5 500 500 500 VGS = 20V, VDS = 0V
IG Gate Operating Current -5 VDG = -15V, ID = -1mA
-10 -500 VDS = -15V, VGS = 12V
-10 -500 VDS = -15V, VGS = 7V
ID(off) Drain Cutoff Current
-10 -500
pA
VDS = -15V, VGS = 5V
rDS(on) Drain to Source On Resistance 75 100 150 Ω V
GS = 0V, ID = -1mA
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated System
2N5114 SERIES
SINGLE P-CHANNEL JFET
Linear Integrated System
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