DSI2x55-16A
Parallel legs
Standard Rectifier
2
3
1
4
Part number
DSI2x55-16A
Backside: isolated
FAV
F
VV1.22
RRM
60
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20130307bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI2x55-16A
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.26
R0.6 K/W
R
min.
60
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
210 WT = 25°C
C
RK/W
55
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.54
T = 25°C
VJ
150
V
F0
V0.83T = °C
VJ
150
r
F
6.2 mΩ
V1.22T = °C
VJ
I = A
F
V
55
1.58
I = A
F
110
I = A
F
110
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
25
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
800
865
2.31
2.25
A
A
A
A
680
735
3.20
3.12
1600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130307bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI2x55-16A
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Similar Part Package Voltage class
DSI2x55-12A SOT-227B (minibloc) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSI2x55-16A 483699Tube 10DSI2x55-16AStandard
2500
3000
ISOL
threshold voltage V0.83
mΩ
V
0 max
R
0 max
slope resistance * 4.3
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130307bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI2x55-16A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130307bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI2x55-16A
0.001 0.01 0.1 1
200
300
400
500
600
700
23456789011
10
2
10
3
10
4
0.4 0.8 1.2 1.6
0
20
40
60
80
100
120
0 1020304050
0
20
40
60
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.0
0.2
0.4
0.6
I
F
[A]
0 255075100125150
0
40
80
120
160
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
t[ms]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current
versus case temperature
Fi
g
. 6 Transient thermal impedance
j
unctiontocase
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.031 0.00024
2 0.0554 0.0036
3 0.114 0.0235
4 0.281 0.142
5 0.1686 0.7
T
VJ
=150°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
=150°C
V
R
= 0 V
0.7
T
VJ
=125°C
150°C
T
VJ
= 125°C
R
thHA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130307bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
