FQT7N10LTF_NL - Fairchild Semiconductor

May 2001

FQT7N10L

QFETTM

FQT7N10L

100V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as high efficiency

switching DC/DC converters, and DC motor control.

Features

• 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V

• Low gate charge ( typical 4.6 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• Improved dv/dt capability

• Low level gate drive requirments allowing

direct operationfrom logic drives

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT7N10L Units

VDSS Drain-Source Voltage 100 V

IDDrain Current - Continuous (TC = 25°C) 1.7 A

- Continuous (TC = 70°C) 1.36 A

IDM Drain Current - Pulsed (Note 1) 6.8 A

VGSS Gate-Source Voltage ± 20 V

EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ

IAR Avalanche Current (Note 1) 1.7 A

EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PDPower Dissipation (TC = 25°C) 2.0 W

- Derate above 25°C 0.016 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJA Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

SOT-223

FQT Series

Rev. A, May 2001

FQT7N10L

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA

VDS = 80 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 0.85 A

VGS = 5 V, I D = 0.85 A -- 0.275

0.300 0.35

0.38 Ω

gFS Forward Transconductance VDS = 30 V, ID = 0. 85 A -- 2.75 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 220 290 pF

Coss Output Capacitance -- 55 72 pF

Crss Reverse Transfer Capacit ance -- 12 15 pF

Switching Characteristics

td(on) Turn-On Delay T ime VDD = 50 V, ID = 7.3 A,

RG = 25 Ω

-- 9 30 ns

trTurn-On Rise Time -- 100 210 ns

td(off) Turn-Off De l a y Time -- 17 45 ns

tfTurn -Off Fa ll Time -- 5 0 11 0 ns

QgTotal Gate Ch arge VDS = 80 V, ID = 7.3 A,

VGS = 5 V

-- 4.6 6.0 nC

Qgs Gate-Source Charge -- 1.0 -- nC

Qgd Gate-Drain Charge -- 2.6 -- nC

Drain-Source Diode Characteristics and Maximum R atings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1.7 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.7 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 7.3 A,

dIF / dt = 100 A/µs

-- 70 -- ns

Qrr Reverse Recovery Charge -- 140 -- nC

FQT7N10L

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

25!

150!

N o te s :

1 . V GS = 0V

2. 250#s Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

0246810

10-1

100

" No te s :

1. V DS = 30V

2. 250#s Pulse T es t

-55!

150!

25!

ID , D ra in Cu rre n t [A ]

VGS , G ate -Sou rce V o lta g e [V]

012345678

VDS = 50V

VDS = 80V

" Note : ID = 7.3 A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

100

200

300

400

500

600 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

" Note s :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20

0.0

0.3

0.6

0.9

1.2

1.5

VGS = 10V

VGS = 5V

" N ote : T J = 25!

RDS(ON) [$],

Drain-Source On-Resistance

ID, Drain Current [A]

10-1 100101

10-1

100

V GS

Top : 1 0 .0 V

8 .0 V

6 .0 V

5 .0 V

4 .5 V

4 .0 V

3 .5 V

Bottom : 3.0 V

" No te s :

1. 250#s Pulse T e st

2. TC = 25!

ID, D ra in C u rre n t [A ]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e Ch aracterist i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQT7N10L

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

" No te s :

1. VGS = 10 V

2. ID = 0.85 A

RDS(ON) , (Norma lize d )

Drain-So urce O n-Res istance

TJ, Junction T em pe rature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 #A

BV DSS , (No r ma liz e d )

D rain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

10-5 10-4 10-3 10-2 10-1 100101102103

10-1

100

101

102

" Notes :

1. Z %JC(t) = 62 .5 !/W M a x .

2 . Du ty F a c tor, D=t1/t2

3. T JM - TC = PDM * Z%JC(t)

s in g le p u ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), Therm al Response

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.4

0.8

1.2

1.6

2.0

ID, Dr ain Curre n t [A]

TC, Case Temperature [!

]

10-1 100101102

10-2

10-1

100

101

100 ms

10 ms

1 ms100 µs

Operation in This Area

is Limited by R DS(on)

" No te s :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltag e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Res pons e Cur ve

PDM

FQT7N10L

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

FQT7N10L

Peak Diode Recovery dv/dt Test Circ ui t & Waveform s

DUT

VDS

Driver

RGSame Typ e

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Typ e

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQT7N10L

Package Dimensions

3.00 ±0.10

7.00 ±0.30

0.65 ±0.20

0.08MAX

3.50 ±0.20

1.60 ±0.20

(0.46)

(0.89)

(0.60) (0.60)

1.75 ±0.20

0.70 ±0.10

4.60 ±0.25

6.50 ±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°

+0.10

–0.05

0.06 +0.04

–0.02

SOT-223

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NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

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CORPORATION.

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when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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