DIODE MODULE DD130F UL;E76102 M Power Diode Module DD130F series are designed for various rectifier circuits. DD130F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability Applications Various rectifiers, Battery chargers, DC motor drives Unit a Maximum Ratings Symbol Tj 25 Ratings Item DD130F40 DD130F80 DD130F120 DD130F160 Unit VRRM Repetitive Peak Reverse Voltage 400 800 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V Symbol Item Ratings Unit IF AV IF (RMS) IFSM I2t VISO Tj Tstg Conditions Average Forward Current Single phase, half wave, 180 conduction, Tc 90 130 A R.M.S. Forward Current Single phase, half wave, 180 conduction, Tc 90 205 A Surge Forward Current 1 I2t Isolation Breakdown Voltage R.M.S Junction Temperature 2 cycle, 50/60HZ, peak value, non-repetitive Value for one cycle of surge current A.C.1minute A A2S 2500 Storage Temperature Mounting Torque 4000/4400 80000 40 125 40 125 Mounting M5 Recommended Value 1.5 2.5 15 25 2.7 28 Terminal M8 Recommended Value 8.8 10 11 115 510 90 105 Mass V N m f B g Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current, max. at VFM Forward Voltage Drop, max. Forward current 400A Tj 25 Junction to case Rth j-c 99 Thermal Impedance, max. VDRM, Conditions Ratings Unit single phase, half wave. Tj 125 50 mA 1.40 V 0.20 /W http://store.iiic.cc/ Inst. measurement DD130F http://store.iiic.cc/ 100