Preliminary Data Sheet
April 2004
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. Available Packages
N-CDMA Features
■Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 700 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 12 W.
— Power gain: 15.5 dB.
— Effici ency: 23.5%.
— IM3: –36 dBc.
— ACPR: –50.5 dBc.
EDGE Features
■Typical EDGE performance (1960 MHz, 26 V,
IDQ = 500 mA):
— Output power (POUT): 25 W.
— Power gain: 15.3 dB.
— Efficiency: 37%.
— Modulation spectrum:
❏@ ±400 kHz = –61.0 dBc.
❏@ ±600 kHz = –74.0 dBc.
— Error vecto r mag nit ude (E VM ) = 2.5%.
GSM Features
■Typical performance over entire GSM band:
— P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB =
14.5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features
■High-reliability, gold-metalization process.
■Low hot carrier injection (HCI) induced bias drift
over 20 years.
■Internally matched.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW
output power.
■Large signal impedance parameters available.
ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JES D22-A 115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19060EU (unflanged) AGR19060EF (flanged)
AGR19060E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
60 W, 1930 M Hz —1 990 M Hz, PCS LDMOS RF Power Transistor April 2004
AGR19060E Preliminary Data Sheet
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely af fect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter Symbol Value Unit
Thermal Resistance, Junction to Case:
AGR19060EU
AGR19060EF RθJC
RθJC 1.00
1.00 °C/W
°C/W
Parameter Symbol Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR19060EU
AGR19060EF PD
PD175
175 W
W
Derate Above 25 °C:
AGR19060EU
AGR19060EF —
—1.00
1.00 W/°C
W/°C
Operating Junction Temperature TJ200 °C
S torage Temperature Range TSTG –65, 150 °C
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Volt age (VGS =0V, ID=90µA) V(BR)DSS 65 ——Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——1.8 µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——5.5 µAdc
On Characteri st ics
Forward Transconductance (VDS =10V, ID=0.45A) GFS —4.0 — S
Gate Threshold Voltage (VDS =10V, ID=180µA) VGS(th) ——4.8 Vdc
Gate Quiescent Voltage (VDS =28V, ID= 500 mA) VGS(Q) —3.6 —Vdc
Drain-source On-voltage (VGS =10V, ID=0.45A) VDS(on) —0.08 —Vdc
Agere Systems Inc. 3
Preliminary Data Sheet AGR19060E
April 2004 60 W, 1930 M H z—1 990 M Hz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Transfer Capacitance
(VDS =28V, VGS =0, f=1MHz)
(Part is internally matched both on input and output.)
CRSS —1.3 —pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS 14.5 15.5 —dB
Drain Effici enc y
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η—23.5 — %
Third-order Intermodulation Distortion
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 –2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3 —–36 —dBc
Adjacent Channel Power Ratio
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 –2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR —–50.5 —dBc
Input Return Loss
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL —–12 —dB
Output Power at 1 dB Gain Compression
(VDD =28V, POUT = 60 W CW, f = 1990 MHz, IDQ =500mA) P1dB 60 70 — W
Ruggedness
(VDD =28V, POUT =60W CW, IDQ = 350 mA, f = 1930 MHz,
VSWR = 10:1 [all phase angles])
ΨNo degradation in output
power.
4Agere Systems Inc.
60 W, 1930 M Hz —1 990 M Hz, PCS LDMOS RF Power Transistor April 2004
AGR19060E Preliminary Data Sheet
Test Circuit Illustrations for AGR19060E
A. Schematic
B. Component Layout
Parts List:
■Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.;
Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.;
Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in.
■ATC® B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JC A500X; C7: 1000 pF, 100B102JCA500X.
■Kemet® B case chip capacitors: C9, C11: 0.10 µF, CDR33BX104AKWS.
■Johanson Giga-Trim® variable capacitors: C5, C17: 0.4 pF—2.5 pF.
■Vitramon® 1206: C2, C8: 22000 pF.
■Murata® 0805: C13: 0.01 µF, GRM40X7R103K100AL.
■Fair-Rite® ferrite bead: FB1, #2743019447.
■Sprague® t antalum, SMT, 35 V: C1, C10, C12: 22 µF; C18: 10 µF.
■Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 Ω; R2 560 kΩ; R3 4.7 Ω.
■PCB etched circuit boards.
■Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19060E Test Circuit Schematic
DUT
R3
C2 R2
R1
C1
FB1
Z13
Z1 C4Z2 Z4
C9C8C6
Z14
C13 C12
C11 C10
RF INPUT
VGG VDD
RF
C3
C5 OUTPUT
12
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Z5 Z6 Z7 Z8 Z10 Z12C16Z9
C17
Z11
++
C7
Z3
C18
+
Gate Gnd Drain
C4
C1
R3 C18
C16
C8C9
C7
S2S1
R2 FB1
C11
C17
C13
C5
R1
C2
C6
C12
C10
C3
Agere Systems Inc. 5
Preliminary Data Sheet AGR19060E
April 2004 60 W, 1930 M H z—1 990 M Hz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
Note: ZL was chosen based on trade-offs between gain, output power, drain effici ency, and intermodulation distortion.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZS Ω
(Complex Source Impedance)ZL Ω
(Complex Optimum Load Impedance)
1930 (f1) 7.24 – j5.20 3.23 – j1.07
1960 (f2) 7.04 – j5.00 3.06 – j0.99
1990 (f3) 6.87 – j4.96 2.97 – j1.00
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
N
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZL
f3 f1
ZS
f3
f1
Z0 = 20 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
6Agere Systems Inc.
60 W, 1930 M Hz —1 990 M Hz, PCS LDMOS RF Power Transistor April 2004
AGR19060E Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 500 mA, CW, center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
Test Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spac-
ing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
25
30
35
40
45
50
55
15 20 25 30 35 40
PIN (d B m)Z
POUT (dBm)Z
6
7
8
9
10
11
12
13
14
15
16
17
18
GPS (dB)Z
P 1dB = 48. 66 dBm (73. 50 W)
P
3dB = 49. 41 dBm
(87.24 W)
POUT
GPS
3 dB
0
5
10
15
20
25
30
35
40
45
50
110 100
POUT (W) Avg.Z
GPS (dB), η (%)Z
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
ACPR (dBc)
GPS
885 k Hz
2. 25 M Hz
η
1 M Hz
Agere Systems Inc. 7
Preliminary Data Sheet AGR19060E
April 2004 60 W, 1930 M H z—1 990 M Hz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Tes t Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT
Tes t Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
60
110 100
POUT (W)Z
GPS (dB), η (%)Z
-70
-60
-50
-40
-30
-20
-10
IM3 (dBc), AC PR (dBc )Z
ACP
GPS
η
IM3
12
13
14
15
16
17
1 10 100
POUT (W)
GPS (dB)Z
IDQ = 500 mA
IDQ = 700 mAIDQ = 800 m A
IDQ = 300 m A IDQ = 400 m A
IDQ = 600 mA
8Agere Systems Inc.
60 W, 1930 M Hz —1 990 M Hz, PCS LDMOS RF Power Transistor April 2004
AGR19060E Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
-70
-65
-60
-55
-50
-45
-40
-35
-30
1 10 100
POUT (W)Z
ACPR (dBc)Z
IDQ = 300 mA
IDQ = 700 mA
IDQ = 500 mA
IDQ = 600 m A
IDQ = 400 mA
IDQ = 800 m A
-55
-50
-45
-40
-35
-30
-25
-20
-15
1 10 100
POUT (W)
IM3 (dBc)
IDQ = 400 m A
IDQ = 800 m A
IDQ = 600 m A
IDQ = 700 m A
IDQ = 500 m A
IDQ = 300 m A
Agere Systems Inc. 9
Preliminary Data Sheet AGR19060E
April 2004 60 W, 1930 M H z—1 990 M Hz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Tes t Conditions:
VDD = 26 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
Tes t Conditions:
VDD = 28 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
0 102030405060
POUT (W) A vg.Z
GPS (dB), η (%), EVM (%)Z
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
SPECTRAL R EGR OW T H (dBc)
EVM
GPS
600 k Hz
400 k Hz
η
0
5
10
15
20
25
30
35
40
45
50
55
0 102030405060
POUT (W) A vg.Z
GPS (dB), η (%), EVM (%)Z
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
SPECTRAL T R EGR OW TH (dBc)Z
EVM
GPS
600 k Hz
400 k Hz
η
10 Agere Systems Inc.
60 W, 1930 M Hz —1 990 M Hz, PCS LDMOS RF Power Transistor April 2004
AGR19060E Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19060EU
AGR19060EF
Label Notes:
■M before the part number denotes model program . X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW ), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = fi ve -dig it wafer l o t n u mb e r.
■ZZZZZZZ = seven-digit assem bly lot number on production parts.
■ZZZZZZZZ ZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
22
3
M-AGR21090U
YYWWLL
AGERE
ZZZZZZZ
1
3
1
AGERE
AGR19060XU
YYWWLL XXXXX
ZZZZZZZ
M-AGR21090F
AGERE
2
ZZZZZZZ
YYWWLL
1
3
2
3
1
AGERE
AGR19060XF
YYWWLL XXXXX
ZZZZZZZ
Preliminary Data Sheet AGR19060E
April 2004 60 W, 1930 M H z—1 990 M Hz, PCS LDMOS RF Power Transistor
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
April 2004
DS04-159RFPP (Replaces D S04-078R FPP)
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 - 712-41 06)
ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 4614688 (Shanghai), (86) 755- 25 881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo ), KO REA: (82) 2-767-1 850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
ATC is a registered trademark of American Te ch nical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation.
Vitramon is a registered trademark of Vitramon Incorporated.
Murata is a registered trademark of Murata Electronics North America, Inc.
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.