Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Typical performance over entire GSM band: -- P1dB: 60 W typical. -- Continuous wave (CW) power gain: @ P1dB = 14.5 dB. -- CW efficiency @ P1dB = 53% typical. -- Return loss: -12 dB. Device Performance Features AGR19060EU (unflanged) AGR19060EF (flanged) Figure 1. Available Packages N-CDMA Features Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz. -- Output power (POUT): 12 W. -- Power gain: 15.5 dB. -- Efficiency: 23.5%. -- IM3: -36 dBc. -- ACPR: -50.5 dBc. EDGE Features Typical EDGE performance (1960 MHz, 26 V, IDQ = 500 mA): -- Output power (POUT): 25 W. -- Power gain: 15.3 dB. -- Efficiency: 37%. -- Modulation spectrum: @ 400 kHz = -61.0 dBc. @ 600 kHz = -74.0 dBc. -- Error vector magnitude (EVM) = 2.5%. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW output power. Large signal impedance parameters available. ESD Rating* AGR19060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet April 2004 Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19060EU AGR19060EF Symbol Value Unit RJC RJC 1.00 1.00 C/W C/W Symbol VDSS VGS Value 65 -0.5, 15 Unit Vdc Vdc PD PD 175 175 W W -- -- TJ TSTG 1.00 1.00 200 -65, 150 W/C W/C C C Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR19060EU AGR19060EF Derate Above 25 C: AGR19060EU AGR19060EF Operating Junction Temperature Storage Temperature Range * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Parameter Off Characteristics Drain-source Breakdown Voltage (VGS = 0 V, ID = 90 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.45 A) Gate Threshold Voltage (VDS = 10 V, ID = 180 A) Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.45 A) 2 Symbol Min Typ Max Unit V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1.8 5.5 Vdc Adc Adc GFS VGS(th) VGS(Q) VDS(on) -- -- -- -- 4.0 -- 3.6 0.08 -- 4.8 -- -- S Vdc Vdc Vdc Agere Systems Inc. Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Symbol Min Typ Max Unit Dynamic Characteristics Transfer Capacitance -- 1.3 -- pF CRSS (VDS = 28 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) Functional Tests (in Agere Systems Supplied Test Fixture) 14.5 15.5 -- dB GPS Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) -- 23.5 -- % Drain Efficiency (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IM3 -- -36 -- dBc Third-order Intermodulation Distortion (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR -- -50.5 -- dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 1.2288 MHz integration BW centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) Input Return Loss IRL -- -12 -- dB (VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) P1dB 60 70 -- W Output Power at 1 dB Gain Compression (VDD = 28 V, POUT = 60 W CW, f = 1990 MHz, IDQ = 500 mA) No degradation in output Ruggedness power. (VDD = 28 V, POUT = 60 W CW, IDQ = 350 mA, f = 1930 MHz, VSWR = 10:1 [all phase angles]) Agere Systems Inc. 3 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet April 2004 Test Circuit Illustrations for AGR19060E R3 VGG VDD FB1 R1 + R2 C1 C2 Z1 RF INPUT C3 C13 C11 Z2 C4 Z3 Z4 Z14 Z13 Z5 2 1 Z6 + C12 C6 Z7 Z8 C7 Z9 3 C8 Z10 C17 C5 C9 C18 + C10 Z11 C16 Z12 RF OUTPUT DUT PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic Gate Gnd Drain C12 C2 R2 R1 R3 C11 C8 C9 C18 C10 C3 FB1 C6 C1 C7 C13 C4 S1 S2 C5 C16 C17 B. Component Layout Parts List: Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.; Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.; Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in. (R) ATC B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JCA500X; C7: 1000 pF, 100B102JCA500X. (R) Kemet B case chip capacitors: C9, C11: 0.10 F, CDR33BX104AKWS. (R) Johanson Giga-Trim variable capacitors: C5, C17: 0.4 pF--2.5 pF. (R) Vitramon 1206: C2, C8: 22000 pF. (R) Murata 0805: C13: 0.01 F, GRM40X7R103K100AL. (R) Fair-Rite ferrite bead: FB1, #2743019447. (R) Sprague tantalum, SMT, 35 V: C1, C10, C12: 22 F; C18: 10 F. Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 ; R2 560 k; R3 4.7 . PCB etched circuit boards. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. AGR19060E Test Circuit Schematic 4 Agere Systems Inc. Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor U CT IN D 90 0.6 10 0.1 0.4 20 0.2 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 50 50 ) / Yo (-jB CE 0 1. N TA EP SC 0 4.0 U ES 1. 0.8 IV CT -15 DU IN 0 2. 1.8 1.6 1.4 0.11 -100 5 -90 0.12 0.13 0.38 0.37 -110 0.1 0.0 9 -70 (-j 06 T 0. 07 -1 30 43 0. 0 -12 8 0.0 0.4 2 0.4 1 0.4 0.39 F 0.36 1.0 1.2 0.15 0.35 0.9 0.14 -80 -4 0 0 -5 -70 -4 4 6 35 0.8 0.1 0.3 0.7 -60 VE 5 3 0.3 7 -5 0.1 CA P AC I TI -60 -30 CE CO M 0.6 32 0. RE AC TA N 0 -65 .5 0.2 EN 0. -25 18 0. 0 -5 PO N 0. 0.4 40 -1 Z X/ ,O o) R -75 0.6 0 5 0.0 0.3 31 0. 19 0. 44 -20 3. 4 0.0 0 -15 -80 0.2 8 0.2 4 0. 0.2 9 0.3 5.0 -85 8 0. 1 -30 6 ZS -4 0 5 0.4 10 0.6 0.2 2 0.2 f1 0.2 0.4 0.4 f3 -20 D LO OW A R 7 HST 0.4 N GT -170 EL E AV W < -90 -160 ZL 0.1 0.48 0.2 f1 -10 A D < RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) f3 20 0.49 0. 8 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 20 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) Note: ZS (Complex Source Impedance) 7.24 - j5.20 7.04 - j5.00 6.87 - j4.96 ZL (Complex Optimum Load Impedance) 3.23 - j1.07 3.06 - j0.99 2.97 - j1.00 ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances Agere Systems Inc. 5 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet April 2004 Typical Performance Characteristics (continued) 55 18 P1dB = 48.66 dBm (73.50 W) 17 3 dB 50 16 GPS 15 14 13 P3dB = 49.41 dBm (87.24 W) 40 POUT 12 11 35 GPS (dB)Z POUT (dBm)Z 45 10 9 30 8 7 25 6 15 20 25 30 35 40 P IN (dBm)Z Test Conditions: VDD = 28 Vdc, IDQ = 500 mA, CW, center frequency = 1960 MHz. Figure 4. CW POUT vs. PIN 50 -20 45 25 -30 885 kHz -35 2.25 MHz 30 1 MHz -40 -45 20 -50 15 -55 GPS 10 5 ACPR (dBc) (%)Z 35 GPS (dB), 40 -25 -60 -65 0 1 10 POUT (W) Avg.Z -70 100 Test Conditions: VDD = 28 Vdc, IDQ = 700 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz). Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT 6 Agere Systems Inc. Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor 60 55 50 45 40 35 30 25 20 15 10 5 0 -10 IM3 -20 -30 ACP -40 -50 GPS -60 1 IM3 (dBc), ACPR (dBc)Z GPS (dB), (%)Z Typical Performance Characteristics (continued) -70 100 10 POUT (W)Z Test Conditions: VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz). Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT 17 IDQ = 800 mA IDQ = 700 mA IDQ = 600 mA IDQ = 300 mA IDQ = 400 mA IDQ = 500 mA GPS (dB)Z 16 15 14 13 12 1 10 100 POUT (W) Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT Agere Systems Inc. 7 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet April 2004 Typical Performance Characteristics (continued) ACPR (dBc)Z -30 -35 IDQ = 300 mA -40 IDQ = 400 mA IDQ = 500 mA -45 -50 -55 IDQ = 800 mA -60 IDQ = 700 mA IDQ = 600 mA -65 -70 1 10 100 POUT (W)Z Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 8. ACPR vs. POUT -15 -20 IDQ = 300 mA IDQ = 400 mA IM3 (dBc) -25 IDQ = 500 mA -30 -35 -40 -45 IDQ = 800 mA IDQ = 700 mA -50 IDQ = 600 mA -55 1 10 100 POUT (W) Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 9. IM3 vs. POUT 8 Agere Systems Inc. Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor 50 -35 (%), EVM (%) Z -30 45 GPS (dB), 55 20 -40 40 400 kHz -45 35 -50 600 kHz 30 -55 25 -60 GPS -65 15 -70 10 -75 EVM 5 SPECTRAL REGROWTH (dBc) Typical Performance Characteristics (continued) -80 0 -85 0 10 20 30 40 50 60 P OUT (W) Avg.Z Test Conditions: VDD = 26 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE. 50 -35 (%), EVM (%) Z -30 45 GPS (dB), 55 20 -40 40 400 kHz -45 35 -50 30 -55 600 kHz 25 -60 -65 GPS 15 -70 10 -75 EVM 5 -80 0 SPECTRAL TREGROWTH (dBc)Z Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT -85 0 10 20 30 40 50 60 P OUT (W) Avg.Z Test Conditions: VDD = 28 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE. Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT Agere Systems Inc. 9 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Preliminary Data Sheet April 2004 Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR19060EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 AGERE AGERE AGR19060XU M-AGR21090U YYWWLL YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 3 3 2 2 AGR19060EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 AGERE AGERE AGR19060XF M-AGR21090F YYWWLL YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 1 3 3 2 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. 10 Agere Systems Inc. Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor RF Power Product Information For product and application information, please visit our website: http://www.agere.com/rfpower. ATC is a registered trademark of American Technical Ceramics Corp. Kemet is a registered trademark of KRC Trade Corporation. Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation. Vitramon is a registered trademark of Vitramon Incorporated. Murata is a registered trademark of Murata Electronics North America, Inc. Fair-Rite is a registered trademark of Fair-Rite Products Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. For additional information, contact your Agere Systems Account Manager or the following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138 1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, FAX (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344 296 400 Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc. Copyright (c) 2004 Agere Systems Inc. All Rights Reserved April 2004 DS04-159RFPP (Replaces DS04-078RFPP)