MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE CM200DU-24F IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 108 93 0.25 14 14 E2 G2 14 C1 E2 25 25 6 62 G1 E1 RTC CIRCUIT DIAGRAM 15.85 (18) C2E1 C1 E2 C2E1 48 0.25 15 6 E2 G2 CM G1 E1 (8.25) RTC 21.5 2.5 3-M6 NUTS 4-6. 5 MOUNTING HOLES 4 18 0.5 2.8 29 +1.0 -0.5 LABEL 0.5 0.5 0.5 4 7 8.5 18 22 7 7.5 18 Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Torque strength -- Weight Conditions G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings 1200 20 200 400 200 400 830 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Parameter Symbol Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c')Q RG Contact thermal resistance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 -- 1.8 1.9 -- -- -- 2200 -- -- -- -- -- 12.2 -- -- -- 0.04 -- -- 40 2.4 -- 78 3.4 2.0 -- 300 80 500 300 200 -- 3.2 0.15 0.18 -- 0.091*3 A VCE(sat) VGE = VCES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 600V, I C = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied*2 (1/2 module) Tc measured point is just under the chips 16 mA V nF nC ns ns C V C/W Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 15 11 10 300 250 9 200 8.5 150 100 8 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 9.5 Tj = 25C VGE = 20V 350 0 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 15V Tj = 25C 2.5 Tj = 125C 2 1.5 1 0.5 0 0 100 200 300 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25C 4 3 IC = 400A IC = 200A 2 IC = 80A 1 0 6 8 10 12 14 16 18 2 102 7 5 3 2 1 1.5 2 2.5 3 3.5 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Coes 100 Cres 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) Cies 7 5 7 5 3 EMITTER-COLLECTOR VOLTAGE VEC (V) 101 3 2 Tj = 25C GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 7 5 101 0.5 20 102 CAPACITANCE Cies, Coes, Cres (nF) 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 7 td(off) 5 tf 3 2 td(on) 102 7 5 3 2 tr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Sep.2000 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE 103 7 5 3 2 102 Irr trr 7 5 Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 25C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.15C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.18C/W 100 7 5 3 2 3 2 10-1 10-1 10-2 10-2 7 5 3 2 7 5 3 2 10-3 7 5 3 2 7 5 3 2 Single Pulse TC = 25C 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Sep.2000