AP20T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic G BVDSS 30V RDS(ON) 50m ID 12.5A S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current 12.5 A ID@TC=100 Continuous Drain Current 8 A 40 A 12.5 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 0.1 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Unit 10 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data & specifications subject to change without notice 1 200902104 AP20T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 50 m VGS=4.5V, ID=5A - - 80 m VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=5A - 6 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V - - 250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=10A - 4 7 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=10A - 30 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 10 - ns tf Fall Time RD=1.5 - 3 - ns Ciss Input Capacitance VGS=0V - 270 430 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP20T03GH/J 18 20 o T C =25 C ID , Drain Current (A) 16 10V 7.0V 5.0V 4.5V 16 14 o TC=150 C ID , Drain Current (A) 18 12 10 8 6 10V 7.0V 5.0V 14 12 10 4.5V 8 6 4 4 V G =3.0V V G =3.0V 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 1 2 2 3 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 ID=5A I D =8A V G =10V T C =25 o C 1.5 Normalized RDS(ON) RDS(ON)(m) 65 55 1.3 1.0 45 0.8 35 0.5 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 10 8 VGS(th) (V) Is (A) 2.0 6 T j =150 o C T j =25 o C 4 1.5 2 1.0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP20T03GH/J f=1.0MHz 14 1000 I D = 10 A V DS =15V V DS =20V V DS =24V 10 Ciss C (pF) VGS , Gate to Source Voltage (V) 12 8 100 Coss 6 Crss 4 2 10 0 0 3 6 9 1 12 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us ID (A) 10 1ms 1 10ms 100ms DC T c =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4