BD2056AFJ - ROHM Co., Ltd. - Product.Network

1/13

www.rohm.com 2011.05 - Rev.B

Power Management Switch ICs for PCs and Digital Consumer Products

2ch High Side Switch ICs

for USB Devices and Memory Cards

BD2046AFJ, BD2056AFJ

●Description

High side switch for USB is a high side switch having over current protection used in power supply line of universal serial bus

(USB). Its switch unit has two channels of N-channel power MOSFET. And, over current detection circuit, thermal shutdown

circuit, under voltage lockout and soft start circuit are built in.

●Features

1) Dual N-MOS high side switch

2) Continuous current load 0.25A

3) Control input logic

Active-Low : BD2046AFJ

Active-High : BD2056AFJ

4) Soft start circuit

5) Over current detection

6) Thermal shutdown

7) Under voltage lockout

8) Open drain error flag output

9) Reverse-current protection when switch off

10) Flag output delay filter built in

●Applications

USB hub in consumer appliances, Car accessory, PC, PC peripheral equipment, and so forth

●Lineup

Parameter BD2046AFJ BD2056AFJ

Continuous current load (A) 0.25 0.25

Over current detection (A) 0.5 0.5

Control input logic Low High

●Absolute Maximum Ratings

Parameter Symbol Ratings Unit

Supply voltage VIN -0.3 to 6.0 V

Enable voltage VEN, V/EN -0.3 to 6.0 V

/OC voltage V/OC -0.3 to 6.0 V

/OC current IS/OC 10 mA

OUT voltage VOUT -0.3 to 6.0 V

Storage temperature TSTG -55 to 150 °C

Power dissipation Pd 560*1 mW

*1 In the case of exceeding Ta = 25°C, 4.48mW should be reduced per 1°C.

* This chip is not designed to protect itself against radioactive rays.

●Operating conditions

Parameter Symbol Ratings Unit

Operating voltage VIN 2.7 to 5.5 V

Operating temperature TOPR -40 to 85 °C

Continuous output current ILO 0 to 250 mA

No.11029EBT05

BD2046AFJ, BD2056AFJ

Technical Note

2/13

www.rohm.com 2011.05 - Rev.B

●Electrical characteristics

○BD2046AFJ (Unless otherwise specified, VIN = 5.0V, Ta = 25°C)

Parameter Symbol Limits Unit Condition

Min. Typ. Max.

Operating Current IDD - 110 140 μA V/EN = 0V, OUT = OPEN

Standby Current ISTB - 0.01 1 μA V/EN = 5V, OUT = OPEN

/EN input voltage V/EN

2.0 - - V High input

- - 0.8 V Low input

- - 0.4 V Low input 2.7V≤ VIN ≤4.5V

/EN input current I/EN -1.0 0.01 1.0 μA V/EN = 0V or V/EN = 5V

/OC output LOW voltage V/OC - - 0.5 V I/OC = 5mA

/OC output leak current IL/OC - 0.01 1 μA V/OC = 5V

ON resistance RON - 100 130 mΩ IOUT = 250mA

Output current at short ISC 0.3 0.5 0.7 A

VIN = 5V, VOUT = 0V,

CL = 100μF (RMS)

Output rise time TON1 - 1.8 10 ms

RL = 20Ω , CL = OPEN

Output turn on time TON2 - 2.1 20 ms

Output fall time TOFF1 - 1 20 μs

Output turn off time TOFF2 - 3 40 μs

UVLO threshold VTUVH 2.1 2.3 2.5 V Increasing VIN

VTUVL 2.0 2.2 2.4 V Decreasing VIN

○BD2056AFJ (Unless otherwise specified, VIN = 5.0V, Ta = 25°C)

Parameter Symbol Limits Unit Condition

Min. Typ. Max.

Operating Current IDD - 110 140 μA VEN = 5V , OUT = OPEN

Standby Current ISTB - 0.01 1 μA VEN = 0V , OUT = OPEN

/EN input voltage VEN

2.0 - - V High input

- - 0.8 V Low input

- - 0.4 V Low input 2.7V≤ VIN ≤4.5V

/EN input current IEN -1.0 0.01 1.0 μA VEN = 0V or VEN = 5V

/OC output LOW voltage V/OC - - 0.5 V I/OC = 5mA

/OC output leak current IL/OC - 0.01 1 μA V/OC = 5V

ON resistance RON - 100 130 mΩ IOUT = 250mA

Output current at short ISC 0.3 0.5 0.7 A

VIN = 5V , VOUT = 0V,

CL = 100μF (RMS)

Output rise time TON1 - 1.8 10 ms

RL = 20Ω , CL = OPEN

Output turn on time TON2 - 2.1 20 ms

Output fall time TOFF1 - 1 20 μs

Output turn off time TOFF2 - 3 40 μs

UVLO threshold VTUVH 2.1 2.3 2.5 V Increasing VIN

VTUVL 2.0 2.2 2.4 V Decreasing VIN

BD2046AFJ, BD2056AFJ

Technical Note

3/13

www.rohm.com 2011.05 - Rev.B

GND

EN1

EN2

/OC1

OUT1

OUT2

/OC2

VDD

VEN

1µF

VEN

●Measurement circuit

GND

EN1

EN2

/OC1

OUT1

OUT2

/OC2

VDD

VEN

1µF

VEN

RL CL

RLCL

Operating current EN, /EN input voltage, Output rise, fall time

GND

EN1

EN2

/OC1

OUT1

OUT2

/OC2

VDD

VEN

1µF

VEN IOUT

10k 10

IOUT

GND

EN1

EN2

/OC1

OUT1

OUT2

/OC2

VDD

VEN

1µF

VEN

IOUT

VDD

ON resistance, Over current detection OC output LOW voltage

Fig.1 Measurement circuit

●Timing diagram

○BD2046AFJ ○BD2056AFJ

TON2

50%

TON1

10%

90%

50%

90%

10%

TOFF1

VOUT

VEN

TOFF2

TON2

50%

TON1

10%

90%

50%

90%

10%

TOFF1

VOUT

VCTRL

TOFF2

Fig.2 Timing diagram Fig.3 Timing diagram

BD2046AFJ, BD2056AFJ

Technical Note

4/13

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●Reference data

Fig.6 Operating current

EN,/EN Disable

Fig.7 Operating current

EN,/EN Disable

Fig.4 Operating current

EN,/EN Enable

100

120

140

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

OPERATING CURRENT :

IDD [uA]

VIN=5.0V

0.0

0.2

0.4

0.6

0.8

1.0

23456

SUPPLY VOLTAGE : VIN [V]

OPERATING CURRENT :

ISTB[uA]

Ta=25 ° C

Fig.5 Operating current

EN,/EN Enable

0.0

0.5

1.0

1.5

2.0

23 456

SUPPLY VOLTAGE : VIN [V]

ENABLE INPUT VOLTAGE :

VEN,

V/EN[V] 0

Low to Hi

High to Low

Ta=25 ° C

Fig.8 EN,/EN input voltage

0.0

0.5

1.0

1.5

2.0

-50 0 50 100

AMBIENT TEM PERATURE : Ta[℃]

ENABLE INPUT VOLTAGE :

VEN, V/EN[V]

VIN=5.0V

High to Lo

Low to High

Fig.9 EN,/EN input voltage

0.0

0.1

0.2

0.3

0.4

0.5

23456

SUPPLY VOLTAGE : VDD[V]

/OC OUTPUT LOW VOLTAGE :

V/OC[V]

Ta=25 ° C

Fig.10 /OC output LOW voltage

0.0

0.1

0.2

0.3

0.4

0.5

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

/OC OUTPUT LOW VOLTAGE :

V/OC[V]

VIN=5.0V

Fig.11 /OC output LOW voltage Fig. ON resistance

100

150

200

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

ON RESISTANCE :

RON [mΩ]

VIN=5.0V

Fig.13 ON resistance

100

120

140

23456

SUPPLY VOLTAGE : VIN [V]

OPERATING CURRENT :

IDD [uA]

Ta=25 ° C

0.0

0.2

0.4

0.6

0.8

1.0

-50 0 50 100

AMBIENT TEM PERATURE : Ta[℃]

OPERATING CURRENT :

ISTB[uA]

VIN=5.0V

100

150

200

23 456

SUPPLY VOLTAGE : VDD[V]

ON RESISTANCE :

RON[mΩ]

Ta=25 ° C

0.0

0.5

1.0

1.5

2.0

23456

SUPPLY VOLTAGE : VIN [V]

SHORT CIRCUIT CURRENT :

ISC[A]

Ta=25 ° C

Fig.14 Output current at shortcircuit

0.0

0.5

1.0

1.5

2.0

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

SHORT CIRCUIT CURRENT :

ISC[A]

VIN=5.0V

Fig.15 Output current at short circuit

BD2046AFJ, BD2056AFJ

Technical Note

5/13

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Fig.18 Output turn on time

Fig.19 Output turn on time

Fig.22 Output turn off time

0.0

1.0

2.0

3.0

4.0

5.0

23456

SUPPLY VOLTAGE : VIN [V]

TURN ON TIME :

TON2 [ms]

Ta=25 ° C

0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

TURN ON TIME :

TON2 [ms]

VIN=5.0V

0.0

1.0

2.0

3.0

4.0

5.0

23456

SUPPLY VOLTAGE : VIN [V]

FALL TIME :

TOFF1[us]

Ta=25 ° C

Fig.20 Output fall time

0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

FALL TIME :

TOFF1[us]

VIN=5.0V

Fig.21 Output fall time

0.0

1.0

2.0

3.0

4.0

5.0

6.0

23456

SUPPLY VOLTAGE : VIN [V]

TURN OFF TIME :

TOFF2 [us]

Ta=25 ° C

0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

AMBIENT TEM PERATURE : Ta[℃]

TURN OFF TIME :

TOFF2 [us]

VIN=5.0V

Fig.23 Output turn off time

2.0

2.1

2.2

2.3

2.4

2.5

-50 0 50 100

AMBIENT TEM PERATURE : Ta[℃]

UVLO THRESHOLD VOLTAGE :

VUVLOH , VUVLOL [V]

VUVLOH

VUVLOL

Fig.24 UVLO threshold voltage

0.0

0.2

0.4

0.6

0.8

1.0

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

UVLO HYSTERESIS VOLTAGE :

VHYS[V]

Fig.25 UVLO hysteresis voltage

Fig.16 Output rise time

0.0

1.0

2.0

3.0

4.0

5.0

-50 0 50 100

AMBIENT TEMPERATURE : Ta[℃]

RISE TIME :

TON1 [ms]

VIN=5.0V

Fig.17 Output rise time

0.0

1.0

2.0

3.0

4.0

5.0

23456

SUPPLY VOLTAGE : VIN [V]

RISE TIME :

TON1 [ms]

Ta=25 ° C

BD2046AFJ, BD2056AFJ

Technical Note

6/13

www.rohm.com 2011.05 - Rev.B

●Waveform data

Regarding the output rise/fall and over current detection characteristics of BD2046AFJ, refer to the characteristic of BD2056AFJ.

TIME(1ms/div.)

Fig.26 Output rise characteristic

(BD2056AFJ)

V/EN

(5V/div.)

V/OC

(5V/div.)

VIN=5V

RL=10Ω

CL=100uF

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

TIME(1ms/div.)

Fig.27 Output fall characteristic

(BD2056AFJ)

TIME(20ms/div.)

Fig.29 Over current response

Ramped load

(BD2056AFJ)

TIME (2ms/div.)

Fig.31 Over current response

Enable to short circuit

(BD2056AFJ)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

TIME (1ms/div.)

Fig.32 Over current response

Enable to short circuit

(BD2056AFJ)

TIME (500ms/div.)

Fig.33 Over current response

Enable to short circuit

(BD2056AFJ)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

TIME (1s/div.)

Fig.34 UVLO response

Increasing VIN

(BD2056AFJ)

VIN=5V

CL=100uF

V/EN

(5V/div.)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V

CL=100uF

Thermal Shutdown

V/EN

(1V/div.)

VIN=5V

RL=20Ω

V/OC

(1V/div.)

IOUT

(0.1A/div.)

TIME(500us/div.)

Fig.28 Inrush current response

(BD2056AFJ)

V/EN

(5V/div.)

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

VIN=5V

RL=10Ω

CL=100uF

V/OC

(5V/div.)

RL=20Ω

CL=100uF

V/OC

(5V/div.)

VOUT

(5V/div.)

IOUT

(0.5A/div.)

V/OC

(5V/div.)

RL=20Ω

CL=100uF

TIME (1s/div.)

Fig.35 UVLO response

Decreasing VIN

(BD2056AFJ)

TIME(2ms/div.)

Fig.30 Over current response

Ramped load

(BD2056AFJ)

IOUT

(0.5A/div.)

V/OC

(1V/div.)

VOUT

(1V/div.)

CL=47µF

CL=100µ

CL=147µF

CL=200µF

VIN=2.5V

CL=100uF

BD2046AFJ, BD2056AFJ

Technical Note

7/13

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●Block diagram

Gate

Logic1

OCD1 Charge

Pump1

TSD1

UVLO

Charge

Pump2

OCD2

Gate

Logic2

TSD2

/EN1

EN1

/EN2

EN2

GND

/OC1

OUT1

OUT2

/OC2

Delay

GND

/OC1

OUT1

EN1

(EN1)

OUT2

/OC2

To p Vie w

/EN2

(EN2)

Fig.36 Block diagram Fig.37 Pin Configuration

●Pin description

○BD2046AFJ

Pin No. Symbol I / O Pin function

1 GND I Ground.

2 IN I

Power supply input.

Input terminal to the switch and power supply input terminal of the internal circuit.

3, 4 /EN I

Enable input.

Switch on at Low level.

High level input > 2.0V, Low level input < 0.8V.

5, 8 /OC O Error flag output. Low at over current, thermal shutdown.

Open drain output.

6, 7 OUT O Switch output.

○BD2056AFJ

Pin No. Symbol I / O Pin function

1 GND I Ground.

2 IN I

Power supply input.

Input terminal to the switch and power supply input terminal of the internal circuit.

3, 4 EN I Enable input. Switch on at High level.

High level input > 2.0V, Low level input < 0.8V

5, 8 /OC O Error flag output. Low at over current, thermal shutdown.

Open drain output.

6, 7 OUT O Switch output.

BD2046AFJ, BD2056AFJ

Technical Note

8/13

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●I/O circuit

Symbol Pin No Equivalent circuit

EN1(/EN1)

EN2(/EN2) 3, 4

EN1(EN1)

EN2(EN2)

/OC1

/OC2 5, 8

OC1

OC2

OUT1

OUT2 6, 7

OUT1

OUT2

BD2046AFJ, BD2056AFJ

Technical Note

9/13

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●Functional description

1. Switch operation

IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. And the IN

terminal is used also as power source input to internal control circuit.

When the switch is turned on from EN/EN control input, IN terminal and OUT terminal are connected by a 100mΩ switch.

In on status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of IN terminal,

current flows from OUT terminal to IN terminal.

Since a parasitic diode between the drain and the source of switch MOSFET is canceled, in the off status, it is possible to

prevent current from flowing reversely from OUT to IN.

2. Thermal shutdown circuit (TSD)

Thermal shut down circuit have dual thermal shutdown threshold. Since thermal shutdown works at a lower junction

temperature when an overcurrent occurs, only the switch of an overcurrent state become off and error flag is output.

Thermal shut down action has hysteresis. Therefore, when the junction temperature goes down, switch on and error flag

output automatically recover. However, until cause of junction temperature increase such as output shortcircuit is removed

or the switch is turned off, thermal shut down detection and recovery are repeated. The thermal shut down circuit works

when the switch of either OUT1 or OUT2 is on (EN,/EN signal is active).

3. Over current detection (OCD)

The over current detection circuit limits current (ISC) and outputs error flag (/OC) when current flowing in each switch

MOSFET exceeds a specified value. There are three types of response against over current. The over current detection

circuit works when the switch is on (EN,/EN signal is active).

3-1. When the switch is turned on while the output is in shortcircuit status

When the switch is turned on while the output is in shortcircuit status or so, the switch gets in current limit status soon.

3-2. When the output shortcircuits while the switch is on

When the output shortcircuits or large capacity is connected while the switch is on, very large current flows until the

over current limit circuit reacts. When the current detection, limit circuit works, current limitation is carried out.

3-3. When the output current increases gradually

When the output current increases gradually, current limitation does not work until the output current exceeds the over

current detection value. When it exceeds the detection value, current limitation is carried out.

4. Under voltage lockout (UVLO)

UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ.). If the VIN drops below 2.2V(Typ.) while

the switch turns on, then UVLO shuts off the switch. UVLO has hysteresis of a 100mV(Typ).

Under voltage lockout circuit works when the switch of either OUT1 or OUT2 is on (EN,/EN signal is active).

5. Error flag (/OC) output

Error flag output is N-MOS open drain output. At detection of over current, thermal shutdown, low level is output.

Over current detection has delay filter. This delay filter prevents instantaneous current detection such as inrush current at

switch on, hot plug from being informed to outside.

BD2046AFJ, BD2056AFJ

Technical Note

10/13

www.rohm.com 2011.05 - Rev.B

V/EN

VOUT

IOUT

V/OC

Out

ut shortcircuit

Thermal shut down

delay

Fig.38 Over current detection, thermal shutdown timing

(BD2046AFJ)

VEN

VOUT

IOUT

V/OC

Out

ut shortcircuit

Thermal shut down

delay

Fig.39 Over current detection, thermal shutdown timing

(BD2056AFJ)

●Typical application circuit

ON/OFF

GND

/EN1

(EN1)

OC1

OUT1

OUT2

OC2

10k~100k

5V(Typ)

OUTIN

VBUS

D+

D-

GND

Data

Regulator

USB Controller

BD2046AFJ/56AFJ

Ferrite

Beads

Data

/EN2

(EN2)

10k~100k

CIN

Data

Fig.40 Typical application circuit

BD2046AFJ, BD2056AFJ

Technical Note

11/13

www.rohm.com 2011.05 - Rev.B

●Application information

When excessive current flows owing to output shortcircuit or so, ringing occurs by inductance of power source line to IC, and

may cause bad influences upon IC actions. In order to avoid this case, connect a bypath capacitor by IN terminal and GND

terminal of IC. 1uF or higher is recommended.

Pull up /OC output by resistance 10kΩ ~ 100kΩ.

Set up value which satisfies the application as CL and Ferrite Beads.

This system connection diagram doesn’t guarantee operating as the application.

The external circuit constant and so on is changed and it uses, in which there are adequate margins by taking into account

external parts or dispersion of IC including not only static characteristics but also transient characteristics.

This system connection diagram doesn’t guarantee operating as the application.

The external circuit constant and so on is changed and it uses, in which there are adequate margins by taking into account

external parts or dispersion of IC including not only static characteristics but also transient characteristics.

●Power dissipation character

(SOP-J8)

Fig.41 Power dissipation curve (Pd-Ta Curve)

100

200

300

400

500

600

0 25 50 75 100 125 150

AMBIENT TEMPERATURE: Ta [℃]

POWER DISSIPATION: Pd[mW]

BD2046AFJ, BD2056AFJ

Technical Note

12/13

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●Notes for use

(1) Absolute Maximum Ratings

An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can

break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any

special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety

measures including the use of fuses, etc.

(2) Operating conditions

These conditions represent a range within which characteristics can be provided approximately as expected. The

electrical characteristics are guaranteed under the conditions of each parameter.

(3) Reverse connection of power supply connector

The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due

to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply terminal.

(4) Power supply line

Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard,

for the digital block power supply and the analog block power supply, even though these power supplies has the same

level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing

the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns.

For the GND line, give consideration to design the patterns in a similar manner.

Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the

same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used

present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant.

(5) GND voltage

Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.

Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient.

(6) Short circuit between terminals and erroneous mounting

In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can

break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between

the terminal and the power supply or the GND terminal, the ICs can break down.

(7) Operation in strong electromagnetic field

Be noted that using ICs in the strong electromagnetic field can malfunction them.

(8) Inspection with set PCB

On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.

Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set

PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig.

After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition,

for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the

transportation and the storage of the set PCB.

(9) Input terminals

In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the

parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the

input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a

voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to

the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is

applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of

electrical characteristics.

(10) Ground wiring pattern

If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND

pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that

resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the

small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.

(11) External capacitor

In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a

degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.

(12) Thermal shutdown circuit (TSD)

When junction temperatures become detected temperatures or higher, the thermal shutdown circuit operates and turns a

switch OFF. The thermal shutdown circuit, which is aimed at isolating the LSI from thermal runaway as much as possible,

is not aimed at the protection or guarantee of the LSI. Therefore, do not continuously use the LSI with this circuit

operating or use the LSI assuming its operation.

(13) Thermal design

Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use.

BD2046AFJ, BD2056AFJ

Technical Note

13/13

www.rohm.com 2011.05 - Rev.B

●Ordering part number

B D 2 0 4 6 A F J - E 2

Part No. Part No.

2046A

2056A

Package

FJ: SOP-J8

Packaging and forming specification

E2: Embossed tape and reel

(SOP-J8)

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

()

Direction of feed

Reel 1pin

(Unit : mm)

SOP-J8

4°+6°

−4°

0.2±0.1

0.45MIN

234

5678

4.9±0.2

0.545

3.9±0.2

6.0±0.3

(MAX 5.25 include BURR)

0.42±0.1

1.27

0.175

1.375±0.1

0.1 S

R1120

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.

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