SILICON RFIC
LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
UPC8178TB
DESCRIPTION
The UPC8178TB is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with an external chip
inductor which cannot be realized on an internal 50 Ω wideband
matched IC. This low current amplifier operates on 3.0 V. This
device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra
High Speed Process) silicon bipolar process which uses direct
silicon nitride passivation film and gold electrodes. These
materials can protect the chip surface from pollution and
prevent corrosion/migration. Thus, this IC has excellent perfor-
mance, uniformity and reliability.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
California Eastern Laboratories
APPLICATIONS
• Buffer Amplifiers on 0.1 to 2.4 GHz mobile
communications system
PART NUMBER UPC8178TB
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS1UNITS MIN TYP MAX
ICC Circuit Current (no signal) mA 1.4 1.9 2.4
GPf = 1.0 GHz dB 9.0 11.0 13.0
Power Gain f = 1.9 GHz dB 9.0 11.5 13.5
f = 2.4 GHz dB 9.0 11.5 13.5
ISOL f = 1.0 GHz dB 34 39 –
Isolation f = 1.9 GHz dB 35 40 –
f = 2.4 GHz dB 33 38 –
PO(1dB) f = 1.0 GHz dBm -8.0 -4.0 –
1 dB Gain Compression Output Power f = 1.9 GHz dBm -11.0 -7.0 –
f = 2.4 GHz dBm -11.5 -7.5 –
NF f = 1.0 GHz dB – 5.5 7.0
Noise Figure f = 1.9 GHz dB – 5.5 7.0
f = 2.4 GHz dB – 5.5 7.0
RLin f = 1.0 GHz dB 4 7 –
Input Return Loss f = 1.9 GHz dB 5 8 –
f = 2.4 GHz dB 6.5 9.5 –
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency unless otherwise specified))
•LOW CURRENT CONSUMPTION
ICC = 1.9 mA TYP @ VCC = 3.0 V
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
• EXCELLENT ISOLATION:
ISOL = 39 dB TYP @ f = 1.0 GHz
ISOL = 40 dB TYP @ f = 1.9 GHz
ISOL = 38 dB TYP @ f = 2.4 GHz
• POWER GAIN:
GP = 11.0 dB TYP @ f = 1.0 GHz
GP = 11.5 dB TYP @ f = 1.9 GHz
GP = 11.5 dB TYP @ f = 2.4 GHz
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• 1 dB GAIN COMPRESSION OUTPUT POWER:
PO(1 dB) = -4.0 dBm TYP @ f = 1.0 GHz
PO(1 dB) = -7.0 dBm TYP @ f = 1.9 GHz
PO(1 dB) = -7.5 dBm TYP @ f = 2.4 GHz
• HIGH-DENSITY SURFACE MOUNTING:
6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
•LOW WEIGHT:
7 mg (Standard Value)
FEATURES
+20
+10
0
-10
-20
-30
-400.1 1.00.3 3.0
T
A
= -40°C
T
A
= +85°C
T
A
= +25°C
V
CC
= 3.0 V
1.9 GHz
2.4 GHz
1.0 GHz
POWER GAIN vs. FREQUENCY