DATA SH EET
Product specification 1999 Oct 20
DISCRETE SEMICONDUCTORS
BLF202
HF/VHF power MOS transistor
M3D175
1999 Oct 20 2
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
FEATURES
•High power gain
•Easy power control
•Gold metallization
•Good thermal stability
•Withstands full load mismatch.
APPLICATIONS
•Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
PINNING - SOT409A
PIN DESCRIPTION
1, 8 source
2, 3 gate
4, 5 source
6, 7 drain
handbook, halfpage
MBK150
Top view
14
85
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb =25°C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 12.5 2 >10 >50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1999 Oct 20 3
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −40 V
VGS gate-source voltage −20 V
IDDC drain current −1A
P
tot total power dissipation Tmb ≤85 °C−5.7 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to
mounting base Tmb ≤85 °C, Ptot = 5.7 W 20.5 K/W
handbook, halfpage
MCD789
110
V
DS (V)
ID
(A)
102
10
1
10−1
10−2
(1) (2)
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =85°C.
1999 Oct 20 4
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID= 3 mA; VGS =0 40 −− V
V
GS(th) gate-source threshold voltage ID= 3 mA; VDS =10V 2 −4.5 V
IDSS drain-source leakage current VGS = 0; VDS = 12.5 V −−10 µA
IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
I
DSX on-state drain current VGS = 15 V; VDS =10V −1.3 −A
RDSon drain-source on-state resistance ID= 0.3 A; VGS =15V −3.5 4 Ω
gfs forward transconductance ID= 0.3 A; VDS = 10 V 80 135 −mS
Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz −5.3 −pF
Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz −7.8 −pF
Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz −1.8 −pF
handbook, halfpage
15
−5
5
10
0
MGP111
11010
2103
T.C.
(mV/K)
ID (mA)
Fig.3 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values.
VDS =10V.
handbook, halfpage
0
1600
800
1200
400
0420
MGP112
81216
I
D
(mA)
VGS (V)
Fig.4 Drain current as a function of gate-source
voltage; typical values.
VDS = 10 V; Tj=25°C.
1999 Oct 20 5
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
handbook, halfpage
0 40 80 160
5
0
4
120
3
2
1
MGP113
RDSon
(Ω)
Tj (°C)
Fig.5 Drain-source on-state resistance as a
function of junction temperature; typical
values.
VGS = 15 V; ID= 0.3 A.
handbook, halfpage
048 16
30
10
0
20
MGP114
12
C
(pF)
VDS (V)
Cos
Cis
Fig.6 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
048 16
5
0
4
MGP115
12
3
2
1
Crs
(pF)
VDS (V)
Fig.7 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
1999 Oct 20 6
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb =25°C; RGS = 237 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 12.5 20 2 >10; typ. 13 >50; typ. 55
handbook, halfpage
1
20
12
16
8
0
4
100
60
80
40
0
20
1.5 3.5
MGP116
2 2.5 3
Gp
(dB)
PL (W)
ηD
(%)
ηD
Gp
Fig.8 Power gain and efficiency as a functions of
load power; typical values.
Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz.
handbook, halfpage
0 0.2 0.4 0.8
4
3
1
0
2
MGP117
0.6
PL
(W)
PIN (W)
Fig.9 Load power as a function of input power;
typical values.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz.
1999 Oct 20 7
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
handbook, full pagewidth
MGP118
C5
C7
50 Ω
input
C1
C3
C4
L1 L2 D.U.T. L3 L4
L5
R1
R2
R4
R3
C2 C9
C8
C10
+VD
C11
L6
R6
R5
C6
50 Ω
output
Fig.10 Test circuit for class-B operation.
f = 175 MHz.
1999 Oct 20 8
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
List of components (class-B test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr= 2.2), thickness
1.6 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C11 film dielectric trimmer 2 to 9 pF 2222 809 09005
C2, C9 film dielectric trimmer 2 to 9 pF 2222 809 09002
C3, C5 multilayer ceramic chip capacitor;
note 1 1 nF; 500 V
C4, C6 multilayer ceramic chip capacitor 2 ×100 nF
in parallel,
50 V
2222 852 47104
C7 Sprague electrolytic tantalum
capacitor 2.2 µF; 35 V
C8 multilayer ceramic chip capacitor;
note 1 5.1 pF; 500 V
C10 multilayer ceramic chip capacitor;
note 1 9.1 pF; 500 V
L1 8 turns enamelled 0.8 mm copper
wire 137 nH length 5.1 mm;
int. dia. 4 mm;
leads 2 ×5mm
L2, L3 stripline; note 2 81 Ω8mm×2mm
L4 3 turns enamelled 1 mm copper wire 57 nH length 5 mm;
int. dia. 6 mm;
leads 2 ×5mm
L5 9 turns enamelled 1 mm copper wire 355 nH length 11 mm;
int. dia. 7 mm;
leads 2 ×5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36642
R1 0.4 W metal film resistor 237 Ω2322 151 72371
R2 0.4 W metal film resistor 1 kΩ2322 151 71002
R3 0.4 W metal film resistor 1 MΩ2322 151 71005
R4 10 turns cermet potentiometer 5 kΩ
R5 0.4 W metal film resistor 7.5 kΩ2322 151 77502
R6 1 W metal film resistor 10 Ω2322 153 51009
1999 Oct 20 9
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
handbook, halfpage
0 50 100 200
250
0
−125
125
150
MGP119
Zi
(Ω)
f (MHz)
ri
xi
Fig.11 Input impedance as a function of frequency
(series of components); typical values.
Class B-operation; VDS = 12.5 V; IDQ =20mA;
R
GS = 237 Ω; PL=2W.
handbook, halfpage
0 50 100 200
50
0
40
MGP120
150
30
20
10
ZL
(Ω)
f (MHz)
XL
RL
Fig.12 Load impedance as a function of frequency
(series components); typical values.
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL=2W.
handbook, halfpage
MBA379
ZiZL
Fig.13 Definition of MOS impedance.
handbook, halfpage
0 50 100 200
20
10
0
5
15
MGP121
150
Gp
(dB)
f (MHz)
Fig.14 Power gain as a function of frequency;
typical values.
Class B-operation; VDS = 12.5 V; IDQ = 20 mA;
RGS = 237 Ω; PL=2W.
1999 Oct 20 10
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
handbook, full pagewidth
MGK390
1.87 (2×)
4.60
0.80 (2×)
0.60 (4×)
0.50 (12×)
1.00 (8×)
1.00 (9×)
3.607.38
Fig.15 Footprint SOT409A.
Dimensions in mm.
1999 Oct 20 11
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT409A
0 2.5 5 mm
scale
A
Q1
L
Ceramic surface mounted package; 8 leads SOT409A
UNIT cbDE
E
2HH
1LQ
1α
α
w
1
w
2
mm 0.23
0.18
0.58
0.43 4.93
4.01
5.94
5.03
D2
5.16
5.00 4.14
3.99
e
1.27 4.39
4.24
7.47
7.26 0.25 7°
0°
0.25
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
1.02
0.51 0.10
0.00
A
2.36
2.06
inches 0.009
0.007
0.023
0.017 0.194
0.158
0.234
0.198 0.203
0.197 0.163
0.157 0.050 0.173
0.167
0.294
0.286 0.010 7°
0°
0.010
0.040
0.020 0.004
0.000
0.093
0.081
98-01-27
c
H
14
85
E
A
E
2
b
H
1
D
D
2
e
B
w
2
w
1
B
1999 Oct 20 12
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Oct 20 13
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
NOTES
1999 Oct 20 14
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
NOTES
1999 Oct 20 15
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF202
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 68
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Printed in The Netherlands 125002/01/pp16 Date of release: 1999 Oct 20 Document order number: 9397 750 06378
