1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage V DS 700
VDSX *5 700
Continuous drain current ID±12
Pulsed drain current ID(puls] ±48
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 12
Maximum Avalanche Energy EAS *1 276.7
Maximum Drain-Source dV/dt dVDS/dt *4 40
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 95
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage Viso *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3677-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=700V VGS=0V
VDS=560V VGS=0V
VGS=±30V
ID=6A
ID=6A VDS=25V
VCC=300V ID=6A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.316
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=350V
ID=12A
VGS=10V
L=3.53mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
700
3.0 5.0
25
250
100
0.72 0.93
612
1100 1650
170 255
11 17
24.5 36
7.5 12
47.5 72
10 17
31 46.5
4.5 8
11 16.5
12 0.90 1.50
2.6
16.0
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
<<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
VGS=10V
200304
*4 VDS 700V *5 VGS=-30V *6 t=60sec, f=60Hz
=
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*1 L=3.53mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C
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2
Characteristics
2SK3677-01MR FUJI POWER MOSFET
0 25 50 75 100 125 150
0
20
40
60
80
100
120
Allowable Power Diss i pat ion
PD=f(Tc)
PD [W]
Tc [°C]
0 5 10 15 20 25
0
5
10
15
20 20V
7.0V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characte ri s ti c s
ID=f(VDS):80 µs pulse test ,Tch=25°C
VGS=5.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteri stic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10
1
10
100
gfs [S]
ID [A]
Typical Transconduc tance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0 5 10 15 20
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f (I D):80 µs pulse test,Tch=25°C
10V
20V
8.0V
6.0V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On -state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
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3
2SK3677-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
Qg [nC]
Typical Gate Charge Charact e ri st i c s
VGS=f(Qg):ID=12A,Tch=25°C
VGS [V]
560V
350V
Vcc= 140V
100101102
10-3
10-2
10-1
100
101
C [nF ]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0255075100125150
0
100
200
300
400
500
600
700
IAS=5A
IAS=12A
IAS=8A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=70V
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4
2SK3677-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
M aximum Avalanche Current Pulsewidth
IAV=f(tAV): star ting Tc h= 25°C,Vcc=70V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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