1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 600
VDSX 600
Continuous Drain Current ID11
Pulsed Drain Current ID(puls] ±44
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 11
Non-Repetitive EAS 439.1
Maximum Avalanche Energy
Repetitive EAR 19.5
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Peak Diode Recovery -di/dt -di/dt 100
Max. Power Dissipation PD195
1.67
Operating and Storage Tch +150
Temperature range T stg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3930-01L,S,SJ
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=5.5A VGS=10V
ID=5.5A VDS=25V
VCC=300V ID=5.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.641
75 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=11A
VGS=10V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
A/µs
W
°C
°C
600
3.0 5.0
25
2.0
100
0.62 0.80
510
1100 1650
150 225
812
17 26
711
40 60
812
30 45
9 13.5
10 15
1.00 1.50
120 250
0.6 1.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 600V
Note *4
Note *5
Tc=25°C
Ta=25°C
=
<
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=5A,L=32.2mH,
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
=
<
=
<=
<
=
<=
<
=
<
See to P4
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2
Characteristics
2SK3930-01L,S,SJ FUJI POWER MOSFET
0 25 50 75 100 125 150
0
40
80
120
160
200
240
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 5 10 15 20 25
0
4
8
12
16
20
24
20V
10V
7.5V
7V
6.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
VGS=6V
012345678910
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VD S=25V,Tch=25°C
0.01 0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconduc t ance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0 2 4 6 8 10 12 14 16 18 20 22 24 26
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse te st,Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
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3
2SK3930-01L,S,SJ FUJI POWER MOSFET
-50-250 255075100125150
0
1
2
3
4
5
6
7
max.
min.
Gate Threshold Voltage vs. Tc h
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [ °C]
0 1020304050607080
0
4
8
12
16
20
24
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=11A,Tch=25°C
VGS [V]
480V
300V
Vcc= 120V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
IAS=5A
IAS=7A
IAS=11A
EAV [mJ]
starting Tch [°C]
Maxi mum Avalanche Energy vs. starting Tch
E(AV)=f(s tart ing Tch) :Vcc =60V,I(AV)< =11A
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2SK3930-01L,S,SJ FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):start ing Tc h=25°C,Vcc=60V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Im pedanc e
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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