LITE-ON TECHNOLOGY CORPORATION
Propert y of Li t e-On O nly
FEATURES
* HIGH PHOTO SENSITIVITY
* SUITABLE FOR INFRARED RADIATION
* LOW JUNCTION CAPACITANCE
* HIGH CUT-OFF FREQUENCY
* FAST SWITCHING TIME
* THE LTR-516AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT
AND SUITABLE FOR THE DETECTORS OF INFRARED APPLICATIONS
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm(.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm(.059") max.
4. Lead spacing is measured where the leads emerge from the package.
5. Specifications are subject to change without notice.
Part No. : LTR-516AB DATA SHEET Page : 1 of 4
BNS-OD-C131/A4 REV.C JUL, 2012
REV.C JUL 2012
LITE-ON TECHNOLOGY CORPORATION
Pro p ert y of Li t e-On O nly
ABSOLUTE MAXIMUM RATINGS AT T
A
=25℃
℃℃
℃
PARAMETER MAXIMUM RATING
UNIT
Power Dissipation 150 mW
Reverse Voltage 30 V
Operating Temperature Range -40℃ to + 85℃
Storage Temperature Range -55℃ to + 100℃
Lead Soldering Temperature
[1.6mm(.063") From Body] 260℃ for 5 Seconds
ELECTRICAL OPTICAL CHARACTERISTICS AT T
A
=25℃
℃℃
℃
PARAMETER SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Reverse Break Down Voltage V
(BR)R
30 V I
R
= 100μA
Ee = 0mW/c㎡
Reverse Dark Current Voltage ID
(R)
30 nA V
R
= 10V
Ee = 0mW/c㎡
Open Circuit Voltage V
OC
350 mV λ = 940nm
Ee = 0.5mW/c㎡
Rise Time Tr 50 nsec
Fall Time Tf 50 nsec
V
R
= 10V
λ = 940nm
R
L
= 1KΩ
Short Circuit Current I
S
1.7 2 μA
V
R
= 5V
λ = 940nm
Ee = 0.1mW/c㎡
Total Capacitance C
T
25 P V
R
= 3V
f = 1MHZ
Ee = 0mW/c㎡
Wavelength of the Max Sensitivity λ
SMAX
900 nm
Part No. : LTR-516AB DATA SHEET Page : 2 of 4
BNS-OD-C131/A4 REV.C JUL, 2012
LITE-ON TECHNOLOGY CORPORATION
Pro p ert y of Li t e-On O nly
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
10
-1
0
1
2
3
10
10
10
10
10
-2 -1 0 1 2
10 10 10 10
Fig.1 DARK CURRENT VS.
REVERSE VOLTAGE
TA=25° C, Ee=0 mW/cm
Fig.2 CAPACITANCE VS.
REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm
Fig.3 PHOTOCURRENT VS.
AMBIENT TEMPERATURE Fig.4 DARK CURRENT
AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm
Reverse Voltage VR
Ambient Temperature
Reverse Voltage VR
Ambient Temperature
Dark Current ID
Capacitance Ct
Photocurrent
Dark Current ID
pA
nA
Is amb
22
2
Is 25
4000
3000
2000
1000
00 5 10 2015 V V
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0-20 0 20 40 60 80 C 0 20 40 60 80 100
pF
o
o
C
o
Part No. : LTR-516AB DATA SHEET Page : 3 of 4
BNS-OD-C131/A4 REV.C JUL, 2012
LITE-ON TECHNOLOGY CORPORATION
Pro p ert y of Li t e-On O nly
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
%
100
80
60
40
20
0700 800 900 1000 1100
10
-2
mW
CM
10
2
3
uA
010 20
30
40
50
60
80
100
1.0
0.9
0.8
0.6
0
175
125
75
25
0
-40
Wavelength
Fig.5 RELATIVE SPECTRAL SENSITIVITY
VS WAVELENGTH
Irradiance Ee
Fig.6 PHOTOCURRENT VS
IRRADIANCE = 940 nm
Photocurrent Ip
Relative Spectral Sensitivity
Fig.7 SENSITIVITY DIAGRAM
Ambient Temperature
Fig.8 TOTAL POWER DISSIPATION VS
AMBIENT TEMPERATURE
Total Power Dissipation mW
Relative Sensitivity
-1
10
0
10
1
10
2
10
1
10
0
10
-1
10
0.7
0.30.5 0.2 0.4 100 C
o o o
o
o
o
o
o
o
o
-20 0 20 40 60 80
Part No. : LTR-516AB DATA SHEET Page : 4 of 4
BNS-OD-C131/A4 REV.C JUL, 2012
