BSP129
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 0.35 A
TA=70 °C 0.28
Pulsed drain current
ID,pulse TA=25 °C 1.4
Reverse diode dv/dtdv/dt
ID=0.36 A,
VDS=192 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
ESD class (JESD22-A114-HBM) 1A(>250V,<500V)
Power dissipation
Ptot TA=25 °C 1.8 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) see table on next page and diagram 11
Value
VDS
240
V
RDS(on),max
6
W
0.05
A
Product Summary
PG-SOT223
Type
Package
Tape and Reel
Marking
Packaging
BSP129
PG-SOT223
L6327: 1000 pcs/reel
BSP129
Non dry
BSP129
PG-SOT223
L6906: 1000
pcs/reel soed
BSP129
Non dry
Type
Package
Tape and Reel
Marking
Packaging
BSP129
PG-SOT223
H
6327: 1000 pcs/reel
BSP129
Non dry
BSP129
PG-SOT223
H
6906: 1000 pcs/reel
sorted in VGS(th) bands
1)
BSP129
Non dry
Rev. 1.42
page 1
2012-11-29
•
HalogenfreeaccordingtoIEC61249221
BSP129
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
RthJS - - 25 K/W
SMD version, device on PCB
RthJA minimal footprint - - 115
6 cm2 cooling area1) - - 70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=-3 V, ID=250 µA 240 - - V
Gate threshold voltage
VGS(th) VDS=3 V, ID=108 µA -2.1 -1.4 -1
Drain-source cutoff current
ID(off)
VDS=240 V,
VGS=-3 V, Tj=25 °C
- - 0.1 µA
VDS=240 V,
VGS=-3 V, Tj=125 °C
- - 10
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - - 10 nA
On-state drain current
IDSS VGS=0 V, VDS=10 V 50 - - mA
Drain-source on-state resistance
RDS(on) VGS=0 V, ID=25 mA -6.5 20 W
VGS=10 V, ID=0.35 A -4.2 6.0
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=0.28 A
0.18 0.36 - S
Threshold voltage VGS(th) sorted in bands3)
J
VGS(th) VDS=3 V, ID=108 µA -1.2 - -1 V
K -1.35 - -1.15
L -1.5 - -1.3
M -1.65 - -1.45
N -1.8 - -1.6
drain connection. PCB is vertical in still air.
3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for
Rev. 1.42
page 2
2012-11-29
BSP129
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -82 108 pF
Output capacitance
Coss -12 16
Reverse transfer capacitance
Crss - 6 10
Turn-on delay time
td(on) -4.4 6.6 ns
Rise time
tr-4.1 6.2
Turn-off delay time
td(off) -22 33
Fall time
tf-35 53
Gate Charge Characteristics
Gate to source charge
Qgs -0.24 0.36 nC
Gate to drain charge
Qgd -1.7 2.6
Gate charge total
Qg-3.8 5.7
Gate plateau voltage
Vplateau -0.37 - V
Reverse Diode
Diode continous forward current IS- - 0.35 A
Diode pulse current
IS,pulse - - 1.4
Diode forward voltage
VSD
VGS=-3 V, IF=0.35 A,
Tj=25 °C
-0.79 1.2 V
Reverse recovery time
trr -53 80 ns
Reverse recovery charge
Qrr -65 97 nC
VR=120 V, IF=0.2 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=-3 V, VDS=25 V,
f=1 MHz
VDD=120 V,
VGS=-2...5 V,
ID=0.2 A, RG=7.6 W
VDD=192 V, ID=0.2 A,
VGS=-3 to 5 V
Rev. 1.42
page 3
2012-11-29
BSP129
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
100
101
102
103
10-3
10-2
10-1
100
101
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-4
10-3
10-2
10-1
100
101
102
100
101
102
ZthJA [K/W]
tp [s]
0
0.5
1
1.5
2
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
ID [A]
TA [°C]
Rev. 1.42
page 4
2012-11-29
BSP129
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
5
10
15
20
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
RDS(on) [W]
ID [A]
0
0.2
0.4
0.6
0.8
1
-2 -1 0 1 2 3
ID [A]
VGS [V]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70
gfs [S]
ID [A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 2 4 6 8 10
ID [A]
VDS [V]
Rev. 1.42
page 5
2012-11-29
BSP129
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.025 A; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID=108 µA
parameter: ID
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-3 V; f=1 MHz
108 µA
J
K
L
M
N
0.01
0.1
1
10
-2 -1.5 -1 -0.5
ID [mA]
VGS [V]
typ
98 %
0
10
20
30
40
-60 -20 20 60 100 140 180
RDS(on) [W]
Tj [°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
100
101
102
103
0 10 20 30
C [pF]
VDS [V]
Rev. 1.42
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2012-11-29
BSP129
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.2 A pulsed
parameter: Tjparameter: VDD
16 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
200
240
280
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0 1 2 3 4
VGS [V]
Qgate [nC]
25 °C
150 °C
0.01
0.1
1
10
0 0.5 1 1.5 2
IF [A]
VSD [V]
150 °C,
98%
Rev. 1.42
page 7
2012-11-29
BSP129
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev. 1.42
page 8
2012-11-29
BSP129
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.42
page 9
2012-11-29