TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18
TP0610T −60 10 @ VGS = −10 V −1 to −2.4 −0.12
VP0610L −60 10 @ VGS = −10 V −1 to −3.5 −0.18
VP0610T −60 10 @ VGS = −10 V −1 to −3.5 −0.12
BS250 −45 14 @ VGS = −10 V −1 to −3.5 −0.18
FEATURES BENEFITS APPLICATIONS
DHigh-Side Switching
DLow On-Resistance: 8 W
DLow Threshold: −1.9 V
DFast Switching Speed: 16 ns
DLow Input Capacitance: 15 pF
DEase in Driving Switches
DLow Offset (Error) Voltage
DLow-Voltage Operation
DHigh-Speed Switching
DEasily Driven Without Buffer
DDrivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
DBattery Operated Systems
DPower Supply, Converter Circuits
DMotor Control
TP0610T
VP0610T
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
BS250TP0610L
VP0610L
Device Marking
Front View
“S” TP
0610L
xxll
Device Marking
Front View
“S” VP
0610L
xxll
“S” = Siliconix Logo
xxll = Date Code
TP0610L
VP0610L
Device Marking
Front View
“S” BS
250
xxll
“S” = Siliconix Logo
xxll = Date Code
BS250 Marking Code:
TP0610T: TOwll
VP0610T: VOwll
w = Week Code
lL = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Unit
Drain-Source Voltage VDS −60 −60 −60 −60 −45
V
Gate-Source Voltage VGS "30 "30 "30 "30 "25
V
Continuous Drain Current TA= 25_C
ID
−0.18 −0.12 −0.18 −0.12 −0.18
Continuous Drain Current
(TJ = 150_C) TA= 100_CID−0.11 −0.07 −0.11 −0.07 A
Pulsed Drain CurrentaIDM −0.8 −0.4 −0.8 −0.4
Power Dissipation
TA= 25_C
PD
0.8 0.36 0.8 0.36 0.83
W
Power Dissipation TA= 100_CPD0.32 0.14 0.32 0.14 W
Thermal Resistance, Junction-to-Ambient RthJA 156 350 156 350 150 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
2Document Number: 70209
S-41260—Rev. H, 05-Jul-04
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T VP0610L/T BS250
Parameter Symbol Test Conditions
TypaMin Max Min Max Min Max Unit
Static
Drain-Source
V(BR)DSS
VGS = 0 V, ID = −10 mA−70 −60 −60
Drain Source
Breakdown Voltage
V
(BR)DSS VGS = 0 V, ID = −100 mA−45 V
Gate-Threshold
Voltage VGS(th) VDS = VGS, ID = −1 mA −1.9 −1−2.4 −1−3.5 −1−3.5
V
VDS = 0 V, VGS = "20 V "10 "10
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C"50 nA
yg
GSS
VDS = 0 V, VGS = "15 V "20
G
VDS = −48 V, VGS = 0 V −1−1
Zero Gate Voltage
Drain Current IDSS VDS = −48 V, VGS = 0 V, TJ = 125_C−200 −200 mA
Drain Current
DSS
VDS = −25 V, VGS = 0 V −0.5
m
OS
VDS = −10 V, VGS = −4.5 V −180 −50
On-State Drain
CurrentbID(on)
VDS = 10 V VGS = 10 V
L Suffix −750 −600 mA
Currentb
D(on)
VDS = −10 V, VGS = −10 V T Suffix −220
VGS = −4.5 V, ID = −25 mA 11 25
Drain-Source
rDS( )
VGS = −10 V, ID = −0.5 A L Suffix 8 10 10
W
Drain-Source
On-ResistancebrDS(on) VGS = −10 V, ID = −0.5 A, TJ = 125_CL Suffix 15 20 20 W
VGS = −10 V, ID = −0.2 A T Suffix 6.5 10 10 14
Forward
gf
VDS = −10 V, ID = −0.5 A L Suffix 20 80
mS
Forward
Transconductancebgfs VDS = −10 V, ID = −0.1 A T Suffix 90 60 70 mS
Diode Forward
Voltage VSD IS = −0.5 A, VGS = 0 V −1.1 V
Dynamic
Input Capacitance Ciss 15 60 60
Output Capacitance Coss VDS = −25 V, VGS = 0 V
f = 1 MHz
10 25 25 pF
Reverse Transfer
Capacitance Crss
f = 1 MHz
3 5 5
pF
Switchingc
Turn-On Time tON VDD = −25 V, RL = 133 W8 10
ns
Turn-Off Time tOFF
VDD = 25 V
,
RL = 133 W
ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W8 10 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VPDS06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
300
600
900
1200
0246810
0.0
0.2
0.4
0.6
0.8
1.0
012345
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS = 10 V
5 V
4 V
VGS − Gate-to-Source Voltage (V)
− Drain Current (mA)ID
TJ = −55_C
125_C
25_C
0.0
0.3
0.6
0.9
1.2
1.5
1.8
−50 −25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
VGS = 10 V @ 500 mA
VGS = 4.5 V @ 25 mA
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
ID = 500 mA
Gate Charge
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VGS
0
4
8
12
16
20
0 200 400 600 800 1000
On-Resistance vs. Drain Current
ID − Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
− On-Resistance (rDS(on) W)
0
8
16
24
32
40
0 5 10 15 20 25
Capacitance
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
6 V
7 V
VGS = 5 V
VDS = 30 V
VDS = 48 V
8 V
rDS(on) − On-Resiistance
(Normalized)
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
4Document Number: 70209
S-41260—Rev. H, 05-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0246810
On-Resistance vs. Gate-Source Voltage
VGS − Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
− On-Resistance (rDS(on) W)
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25_C
TJ = 125_C
Source-Drain Diode Forward Voltage
VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
10
TJ = −55_C
VGS = 0 V
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
−0.3
−0.2
−0.1
−0.0
0.1
0.2
0.3
0.4
0.5
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
TJ − Junction Temperature (_C)
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 350_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
0.01
0
1
2.5
3
100 6000.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
1.5
2
0.5
1
10
TA = 25_C
