Datasheet
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Switching Diode
1SS400SM
lApplication lDimensions (Unit : mm) 　lLand size figure (Unit : mm)
High frequency switching
lFeatures
1)
2) High reliability
　lStructure
lConstruction
Silicon epitaxial
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta= 25°C)
Symbol Unit
Reverse voltage (repetitive)
VRM V
Reverse voltage (DC)
VRV
Forward voltage(repetitive peak)
IFM mA
Average rectified forward current Io mA
Surge current(t=1s)
Isurge mA
Junction temperature Tj °C
Storage temperature Tstg °C
Symbol Min. Typ. Max. Unit
Forward voltage
VF- - 1.2 V IF=100mA
Reverse current
IR- - 0.1 mAVR=80V
Capacitance between terminals Ct - - 3 pF
VR=0.5V, f=1MHz
Reverse recovery time trr - - 4 ns
Ultra small mold type. (EMD2)
Parameter
Limits
VR=6V, IF=10mA,RL=100W
Parameter
Conditions
-55 to +150
lElectrical characteristics (Ta = 25°C)
90
80
100
500
150
225
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
dot (year week factory)
ROHM : EMD2
JEITA : SC-79
JEDEC : SOD-523
0.8
1.7
0.6
1/5
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400SM
lElectrical characteristic curves
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.1
1
10
100
1000
10000
010 20 30 40 50 60 70 80
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.1
1
10
0 5 10 15
f = 1MHz
860
870
880
890
900
910
AVE : 879.0mV
Ta=25°C
IF=100mA
n=30pcs
FORWARD CURRENT : IF(mA)
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(nA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF DISPERSION MAP
2/5
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400SM
lElectrical characteristic curves
0
20
40
60
80
100
Ta=25°C
VR=80V
n=30pcs
AVE : 18.8nA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE : 0.817pF
Ta=25°C
VR=0.5V
f=1MHz
n=10pcs
0
5
10
15
20
AVE : 3.62A
0
1
2
3
4
5
AVE : 3.06ns
Ta=25°C
VR=6V
IF=10mA
RL=100W
Irr=0.1*IR
n=10pcs
REVERSE CURRENT : IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
IFSM DISPERSION MAP
REVERSE RECOVERY TIME : trr(ns)
trr DISPERSION MAP
8.3ms
IFSM
1cyc.
3/5
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400SM
lElectrical characteristic curves
0.1
1
10
100
110 100
0.1
1
10
100
0.1 1 10 100
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
0.00
0.10
0.20
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
D = 1/2
DC
Sin(θ=180)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
FORWARD POWER
DISPERSION : Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
Mounted on glass epoxy board
1cyc.
8.3ms
IFSM
8.3ms
IFSM
time
4/5
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SS400SM
lElectrical characteristic curves
0
0.05
0.1
0.15
0.2
025 50 75 100 125 150
D = 1/2
DC
Sin(θ=180)
0
0.0001
0.0002
0.0003
0.0004
0.0005
0.0006
0.0007
0.0008
0.0009
0.001
010 20 30 40 50 60 70 80
D = 1/2
DC
Sin(θ=180)
0
1
2
3
4
5
6
7
8
9
10
AVE : 9kV
AVE : 1.8kV
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
ESD DISPERSION MAP
C=100pF
R=1.5kW
C=200pF
R=0W
T Tj=150°C
D=t/T
t VR
Io
VR=40V
0A
0V
REVERSE POWER
DISPERSION : PR (W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
5/5
2013.02 - Rev.B
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
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and verify the latest specifica-
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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provided only to illustrate the standard usage and operations of the Products. The peripheral
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