IPD053N08N3 G OptiMOS(R)3 Power-Transistor Product Summary Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) VDS 80 V RDS(on),max 5.3 mW ID 90 A * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N * Ideal for high-frequency switching and synchronous rectification * Halogen-free according to IEC61249-2-21 Type IPD053N08N3 G Package PG-TO252-3 Marking 053N08N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C2) 90 T C=100 C 90 Unit A Pulsed drain current2) I D,pulse T C=25 C 360 Avalanche energy, single pulse E AS I D=90 A, R GS=25 W 190 mJ Gate source voltage V GS 20 V Power dissipation P tot 150 W Operating and storage temperature T j, T stg -55 ... 175 C T C=25 C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2014-05-19 IPD053N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1 minimal footprint - - 75 6 cm2 cooling area3) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90 A 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=90 A - 4.4 5.3 mW V GS=6 V, I D=45 A - 5.8 9.5 - 2.2 - W 56 111 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=90 A J-STD20 and JESD22 2) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain 3) Rev. 1.1 page 2 2014-05-19 IPD053N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3570 4750 - 963 1280 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 36 54 Turn-on delay time t d(on) - 18 - Rise time tr - 66 - Turn-off delay time t d(off) - 38 - Fall time tf - 10 - Gate to source charge Q gs - 19 25 Gate to drain charge Q gd - 11 16 Switching charge Q sw - 19 28 Gate charge total Qg - 52 69 Gate plateau voltage V plateau - 5.3 - Output charge Q oss - 70 93 nC - - 90 A - - 360 - 1.0 1.2 V - 72 - ns - 130 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=90 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=40 V, I D=90A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 C V GS=0 V, I F=90 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s See figure 16 for gate charge parameter definition Rev. 1.1 page 3 2014-05-19 IPD053N08N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 100 150 80 120 ID [A] Ptot [W] 60 90 40 60 20 30 0 0 0 50 100 150 200 0 50 TC [C] 100 150 200 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 s 10 s 102 100 ZthJC [K/W] ID [A] 100 s 1 ms 0.5 0.2 0.1 10 ms 101 10-1 DC 0.05 0.02 0.01 single pulse 100 10-2 10-1 100 101 102 VDS [V] Rev. 1.1 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-05-19 IPD053N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 360 20 8V 10 V 320 7V 16 280 5.5 V 5V 4.5 V 6.5 V RDS(on) [mW] ID [A] 240 200 6V 160 12 8 6V 120 5.5 V 6.5 V 7V 8V 80 4 10 V 5V 40 4.5 V 0 0 0 1 2 3 4 5 0 40 VDS [V] 80 120 160 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 160 150 120 gfs [S] ID [A] 120 90 80 60 175 C 40 25 C 30 0 0 0 2 4 6 8 VGS [V] Rev. 1.1 0 40 80 ID [A] page 5 2014-05-19 IPD053N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=90 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 12 4 10 3 900 A 90 A VGS(th) [V] RDS(on) [mW] 8 98 % 6 typ 2 4 1 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss IF [A] 102 25 C, 98% 101 Crss 101 100 0 20 40 60 80 VDS [V] Rev. 1.1 175 C, 98% 25 C 175 C 102 C [pF] 103 0 0.5 1 1.5 2 VSD [V] page 6 2014-05-19 IPD053N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=90 A pulsed parameter: T j(start) parameter: V DD 100 12 25 C 40 V 10 20 V 60 V 100 C VGS [V] IAV [A] 8 10 6 150 C 4 2 1 0 0.1 1 10 100 1000 0 20 tAV [s] 40 60 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 90 V GS Qg 85 VBR(DSS) [V] 80 75 V gs(th) 70 65 Q g(th) Q sw Q gs 60 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 1.1 page 7 2014-05-19 IPD053N08N3 G PG-TO252-3 (D-Pak) Rev. 1.1 page 8 2014-05-19 IPD053N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. 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