ATP203
No. A1318-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPA
K
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
ATP203-TL-H
Features
• Low ON-resistance • Large current
•
4V drive • Slim package
•
Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID75 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 225 A
Allowable Power Dissipation PDTc=25°C50W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 52 mJ
Avalanche Current *2 IAV 38 A
Note :
*1 VDD=10V, L=50μH, IAV=38A
*2 L≤50μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1318A
61312 TKIM/91708PA TIIM TC-00001570
ATP203
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
ATP203
LOT No.
1
3
2,4
SANYO Semiconductors
DATA SHEET
ATP203
No. A1318-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS V
DS=30V, VGS=0V 1μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=38A13 22 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=38A, VGS=10V 6.3 8.2 mΩ
RDS(on)2 ID=19A, VGS=4.5V 9.5 13.5 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 2750 pF
Output Capacitance Coss 450 pF
Reverse Transfer Capacitance Crss 265 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
24 ns
Rise Time tr 420 ns
Turn-OFF Delay Time td(off) 130 ns
Fall Time tf75 ns
Total Gate Charge Qg VDS=15V, VGS=10V, ID=75A 44 nC
Gate-to-Source Charge Qgs 14 nC
Gate-to-Drain “Miller” Charge Qgd 5.6 nC
Diode Forward Voltage VSD IS=75A, VGS=0V 1.02
1.2
V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ATP203-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=38A
RL=0.39Ω
VDD=15V
VOUT
ATP203
VIN
10V
0V
VIN
ATP203
No. A1318-3/7
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
100
7
5
3
2
0
100
1000
7
7
5
5
3
2
7
3
2
30515202510
IT14007
IT14006
IT14005
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
7
5
3
2
IT14004
25
°
C
--25
°
C
f=1MHz
Coss
Crss
Tc=75°C
0.1 1.0 23 5723 57 5
10 100
723
10
1.0
7
5
5
7
3
5
3
2
3
2
7VDS=10V
25°C
Tc= --25
°
C
75
°
C
1000
100
10
3
2
5
7
3
2
5
7
0.1 1.0 23 57723 5 100
VDD=20V
VGS=10V
td(off)
tf
td(on)
tr
IT14002 IT14003
0
0
25
1624681012 --60 --40 --20 0 20 40 60 80 100 120 140 160
14
20
10
15
5
0
25
15
20
10
5
VGS=4.5V, ID=19A
ID=19A 38A
IT14000 IT14001
0 5.01.5
0
0
75
45
35
65
55
15
25
40
30
60
70
50
5
10
20
2.00.4 0.6 0.80.2 1.0 1.2 1.4 1.6 1.8 0
100
90
80
70
3.0 4.51.0 2.5 4.00.5 2.0 3.5
60
50
40
30
10
20
4.0V
4.5V
VGS=3.5V
--25
°
C
25
°
C
Tc=75°C
Tc=--25°C
VDS=10V
Tc=25°C
Tc=25°C
Single pulse
6.0V
0.1
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
10 23 57
8.0V
16.0V 10.0V
Ciss
75°C
25
°
C
VGS=10.0V, ID=38A
Single pulse
VGS=0V
Single pulse
ATP203
No. A1318-4/7
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
0
IT14010
0
020 40 60
10
20
50
30
40
80 100 120
60
140 160
100
2
3
5
7
2
2
3
5
7
2
3
5
7
5
3
10
0.1
1.0
23 5 2 77
0.1 1.0 2
IT14009IT14008
0
0
1
2
3
4
5
6
7
8
4530 4020
10
9
10 25 35155
VDS=15V
ID=75A
Operation in this area
is limited by RDS(on).
100μs
ID=75A
IDP=225A
DC operation
35 35710
1ms
10ms
100ms
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT14011
Tc=25°C
Single pulse
10μs
PW≤10μs
ATP203
No. A1318-5/7
Taping Specifi cation
ATP203-TL-H
ATP203
No. A1318-6/7
Outline Drawing Land Pattern Example
ATP203-TL-H
Mass (g) Unit
0.266
* For reference
mm Unit: mm
6.5
6.71.6 2
2.3 2.3
1.5
ATP203
No. A1318-7/7 PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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