PD - 94602 IRF7828 HEXFET(R) Power MOSFET for DC-DC Converters * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7828 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. SO-8 A D 1 8 S 2 7 D S 3 6 D G 4 5 D S T o p V ie w DEVICE CHARACTERISTICS IRF7828 RDS(on) 9.5m QG 9.2nC Qsw 3.7nC Qoss 6.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25C Current (VGS 4.5V) TL = 70C Pulsed Drain Current Power Dissipation TA = 25C Symbol IRF7828 Units VDS 30 V VGS 20 ID 13.6 IDM 100 11 PD TL = 70C 2.5 A W 1.6 TJ, TSTG -55 to 150 C Continuous Source Current (Body Diode) IS 3.1 A Pulsed Source Current ISM 100 Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W Maximum Junction-to-Lead RJL 20 C/W Junction & Storage Temperature Range Thermal Resistance 12/5/02 IRF7828 Electrical Characteristics Parameter Min Typ Max Units Drain-to-Source Breakdown Voltage BVDSS 30 - - V Static Drain-Source on Resistance RDS(on) - 9.5 12.5 m Gate Threshold Voltage VGS(th) 1.0 - - V Drain-Source Leakage Current IDSS - - 1.0 - - 150 Current* Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 10A VDS = VGS,I D = 250A VDS = 24V, VGS = 0 A VDS = 24V, VGS = 0, Tj = 125C Gate-Source Leakage Current IGSS - - 100 nA Total Gate Chg Cont FET QG - 9.2 14 VGS= 5.0V, ID=15A, VDS=16V Total Gate Chg Sync FET QG - 7.3 - VGS = 5V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 - 2.5 - VDS = 15V, ID = 10A Post-Vth Gate-Source Charge QGS2 - 0.8 - Gate to Drain Charge QGD - 2.9 - Switch Chg(Qgs2 + Qgd) Qsw - 3.7 - nC Output Charge Qoss - 6.1 - Gate Resistance RG - 2.3 - Turn-on Delay Time td (on) - 6.3 - Rise Time tr - 2.7 - Turn-off Delay Time td - 9.7 - Fall Time tf - 7.3 - Input Capacitance Ciss - 1010 - Output Capacitance Coss - 360 - Reverse Transfer Capacitance Crss - 110 - Min Typ Max Units (off) VGS = 20V VDS = 10V, VGS = 0 VDD = 15V, ID = 10A ns VGS = 4.5V Clamped Inductive Load pF VDS = 15V, VGS = 0 Source-Drain Rating & Characteristics Parameter Conditions Diode Forward Voltage* VSD - - 1.0 V IS = 10A, VGS = 0V Reverse Recovery Charge Qrr - 13 - nC di/dt ~ 700A/s Reverse Recovery Charge (with Parallel Schottky) Qrr(s) Notes: 2 VDS = 16V, VGS = 0V, IS = 15A - 13 - nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS measured at VGS = 5.0V, IF = 10A. www.irf.com IRF7828 12 ID = 14A ID= 10A VGS , Gate-to-Source Voltage (V) VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 2.0 1.0 8 6 4 2 0 0.5 -60 -40 -20 0 20 40 60 0 80 100 120 140 160 T J , Junction Temperature (C) 5 10 15 20 Q G Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 20 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) RDS(on) , Drain-to -Source On Resistance (m ) VDS= 24V VDS= 15V 10 15 ID = 14A 10 5 Ciss 1000 Coss Crss 100 10 2 4 6 8 VGS, Gate -to -Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage 3 IRF7828 100.0 100.0 ISD, Reverse Drain Current (A) ID, Drain-to-Source Current () T J = 150C 10.0 T J = 25C 1.0 T J = 150C 10.0 1.0 T J = 25C VDS = 15V 20s PULSE WIDTH VGS = 0V 0.1 0.1 2.0 3.0 4.0 5.0 0.0 6.0 0.5 VGS , Gate-to-Source Voltage (V) 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7828 SO-8 Package Details DIM D -B- 5 8 E -A- 1 7 2 6 3 e 6X 5 H 0.25 (.010) 4 M A M e1 K x 45 A -C- 0.10 (.004) B 8X 0.25 (.010) A1 L 8X 6 C 8X M C A S B S INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 1. 2. 3. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking www.irf.com 5 IRF7828 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/02 6 www.irf.com