
V
RRM
= 400 V - 1800 V
I
F
=165 A
Features
• High Surge Capability DO-8 Package
• Types up to 1800 V V
RRM
• Equivalent to SKN130 Series
• Not ESD Sensitive
GKN
Parameter Symbol GKN130/04 GKN130/08 GKN130/16GKN130/1
Unit
Re
etitive
eak reverse volta
eV
RRM
400 800 1600 1800 V
1400
GKN130/04 thru GKN130/18
GKN130/14
1200
GKN130/12
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GKR has leads reversed)
Silicon Standard
Recover
Diode
Conditions
2
1
2
1
DC blocking voltage V
DC
400 800 1600 1800 V
Continuous forward current I
F
165 165 165 165 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbo
GKN130/04 GKN130/08 GKN130/16GKN130/1
Unit
Diode forward voltage 1.5 1.5 1.5 1.5
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.35 0.35 0.35 0.35 K/W
22
14001200
-55 to 150 -55 to 150
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
2500 2500
-55 to 150
165 165
GKN130/12
1.5
T
C
= 25 °C, t
p
= 10 m
V
F
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A2500
1.5
GKN130/14
22 22 22 22 mA22
25002500 2500
-55 to 150
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
0.35 0.35
Reverse current I
R
R
= V
RRM
, T
j
= 180 °
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1