HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
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Information furnished by HAMAMATSU is believ ed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions .
Specifications are subject to change without notice. No patent rights are granted to an y of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
Cat. No. KGPD1019E01
Sept. 2006 DN
GaAs PIN photodiode with preamp G10447 series
2
■ Dimensional outlines (unit: mm)
KGPDA0028EA
■ Bit error rate
10
-12
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
OPTICAL INPUT POWER (dBm in OMA)
BIT ERROR RATE
Bit rate 10.3 Gbps, PN=31, NRZ, Vcc=Vpd=3.3 V
Resposivity 0.55 A/W, λ=850 nm, Extinction ratio 3.0 dB
)(
-18 -8-9-10-11-12-13-14-15-16-17
KGPDB0072EA
KGPDA0028EA
Tolerance unless otherwise
noted: ±0.15
4.88
5.08
2.72
( 1.25)
2.92
Vcc
Vpd
Vout-
Vout+
GND
4.17 ± 0.02
(3 ×) 0.5 × 0.2 t
(2 ×) 2.1
(OPTICAL REFERENCE
PLANE)
3.97
4.04 ± 0.031.27 ± 0.03
6.66 ± 0.05
4.64
(13)
0.9-0.2
(5 ×) 0.35 ± 0.05
+0.25
3.38 ± 0.03
5.94 ± 0.05
5.92 ± 0.2
0.3
(3 ×)1.0
6.6
5.4
2.54 ± 0.15
(60˚)
PIN No.
2.95-0.03
+0.07
■ Frequency response
02018161412108642
-30
-25
-20
-15
-10
-5
0
+5
+10
FREQUENCY (GHz)
RELATIVE SENSITIVITY (dB)
(Ta=25 ˚C, Vout+, Pin= -15 dBm)
KGPDB0073EA
G10447-14 G10447-54
KIRDA0192EA
1.35
2.5
4.45
16.05
8.35
(6 ×) 0.4
(5 ×) 0.79
5.5
0.3
5.8
5.94 ± 0.05
3.38 ± 0.034.64
4.04 ± 0.03
1.27 ± 0.03
6.86 ± 0.5
2.92
5.08
PIN No. Vcc
Vout+
Vout-
Vpd
GND
Tolerance unless otherwise
noted: ±0.15
2.72
4.88
3.97
(5 ×) 0.35 ± 0.05
6.6
4.17 ± 0.02
( 1.25)
KIRDA0192EA