PTF210451E V1 - Infineon Technologies

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Thermally-Enhanced High Power RF LDMOS FETs

45 W, 2010 – 2025 MHz and 2110 – 2170 MHz

Description

The PTF210451E and PTF210451F are 45-watt internally-matched

GOLDMOS® FETs intended for TD-SCDMA applications from 2010

to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation

available. Full gold metallization ensures excellent device lifetime and

reliability.

PTF210451E

Package H-30265-2

Features

•Thermally-enhanced packages, Pb-free and

RoHS-compliant

•Internal matching for wideband performance

•Typical three-carrier TD-SCDMA performance

- Average output power = 3 W

- Gain = 14 dB

- Efficiency = 12.5%

- ACPR = –50 dBc

•Typical CW performance

- Output power at P–1dB = 50 W

- Linear gain = 14 dB

- Efficiency = 53%

•Integrated ESD protection: Human Body Model,

Class 1 (minimum)

•Excellent thermal stability

•Low HCI Drift

•Capable of handling 10:1 VSWR @ 28 V, 45 W

(CW) output power

RF Characteristics

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG

ƒ1 = 2140 MHz, ƒ2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Unit

Intermodulation Distortion IMD —–37 —dBc

Gain Gps —14 —dB

Drain Efficiency ηD—27 —%

3-Carrier TD-SCDMA Drive-up

VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz

0.0 3.0 6.0 9.0

Output Power (W)

Efficiency (%)

-58

-54

-50

-46

-42

-38

ACPR (dBc)

Efficiency Alt Lower

Adj Lower Alt Upper

Adj Upper

*See Infineon distributor for future availability.

PTF210451F

Package H-31265-2

Data Sheet 2 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

RF Characteristics (cont.)

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 13 14 —dB

Drain Efficiency ηD35 38 —%

Intermodulation Distortion IMD —–32 –30 dBc

DC Characteristics

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.2 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD175 W

Above 25°C derate by 1.0 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W

Ordering Information

Type and Version Package Outline Package Description Marking

PTF210451E V1 H-30265-2 Thermally-enhanced slotted flange, single-ended PTF210451E

PTF210451F V1 H-31265-2 Thermally-enhanced earless flange, single-ended PTF210451F

*See Infineon distributor for future availability.

Data Sheet 3 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Power Sweep, CW Conditions

VDD = 28 V, IDQ = 500 mA, ƒ = 2170 MHz

34 36 38 40 42 44 46 48

Output Power (dBm)

Gain (dB)

Drain Efficiency (%)

Efficiency

Gain

Typical Performance (data taken in production test fixture)

Broadband Performance

VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm

2070 2105 2140 2175 2210

Frequency (MHz)

Gain (dB), Efficiency (%)

-30

-25

-20

-15

-10

-5

Input Return Loss (dB)

Input Retrun Loss

Gain

Efficiency

Intermodulation Distortion vs. Output Power

for selected currents

VDD = 28 V, ƒ = 2140 MHz, tone spacing = 1 MHz

-60

-55

-50

-45

-40

-35

-30

34 36 38 40 42 44 46 48

Output Power, PEP (dBm)

IMD (dBc)

0.40 A

0.60 A

0.45 A 0.55 A

0.50 A

Intermodulation Distortion Products

vs. Tone Spacing

VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz,

POUT = 45 W PEP

-60

-55

-50

-45

-40

-35

-30

-25

010 20 30 40

Tone Spacing (MHz)

IMD (dBc)

3rd Order

7th Order

5th Order

Data Sheet 4 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Typical Performance (cont.)

IM3, Gain & Drain Efficiency vs. Supply Voltage

IDQ = 500 mA, ƒ = 2140 MHz, POUT = 44.75 dBm (PEP),

tone spacing = 1 MHz

-45

-40

-35

-30

-25

-20

-15

-10

-5

23 24 25 26 27 28 29 30 31 32 33

Supply Voltage (V)

Gain

Efficiency

IM3 Up

3rd Order IMD (dBc)

Gain (dB), Drain Efficiency (%)

Bias Voltage vs. Case Temperature

Voltage normalized to typical gate voltage.

Series show current.

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20 530 55 80 105

Case Temperature (ºC)

Normalized Bias Voltage

4.50 A

3.75 A

3.00 A

2.25 A

1.50 A

0.75 A

Two-tone Drive-Up

VDD = 28 V, IDQ

= 500 mA, ƒ = 2140 MHz,

tone spacing = 1 MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

34 36 38 40 42 44 46 48

Peak Output Power (dBm)

IMD (dBc)

Drain Efficiency (%)

Efficiency

IM3

IM7

IM5

Single-carrier WCDMA Drive-Up

VDD = 28 V, IDQ

= 500 mA, ƒ = 2140 MHz, 3GPP WCDMA

signal, Test Model 1 w/16 DPCH, 67% clipping,

P/A R = 8.7 dB, 3.84 MHz BW

-60

-55

-50

-45

-40

-35

30 32 34 36 38 40 42

Avgerage Output Power (dBm)

ACPR (dB)

Drain Efficiency (%)

Efficiency

ACPR Low

ACPR Up

Data Sheet 5 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

6-Carrier TD-SCDMA Drive-up

VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz

0.0 2.0 4.0 6.0 8.0

Output Power (W)

Efficiency (%)

-58

-54

-50

-46

-42

-38

ACPR (dBc)

Efficiency Alt Lower

Adj Lower Alt Upper

Adj Upper

4-Carrier TD-SCDMA Drive-up

VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz

0.0 2.0 4.0 6.0 8.0

Output Power (W)

Efficiency (%)

-58

-54

-50

-46

-42

-38

ACPR (dBc)

Efficiency Alt Lower

Adj Lower Alt Upper

Adj Upper

Typical Performance (cont.)

0.1

0.3

0.2

0.1

0.3

S T

2210 MHz

2070 MHz

Z Load

Z Source

2070 MHz

Z Source Z Load

Broadband Circuit Impedance Data

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

2070 5.72 –9.36 4.94 –0.87

2110 5.17 –8.97 4.90 –0.69

2140 4.88 –8.52 4.96 –0.60

2170 4.59 –8.16 4.96 –0.49

2210 4.08 –7.79 4.88 –0.39

Z0 = 50 Ω

Data Sheet 6 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Test Circuit

Test circuit schematic for 2170 MHz

Circuit Assembly Information

DUT PTF210451E or PTF210451F LDMOS Transistor

Circuit Board 0.79 mm [.031”] thick, εr = 4.5 Rogers TMM4, 2 oz. copper

Microstrip Electrical Characteristics at 2170 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.047 λ, 45 Ω3.48 x 1.78 0.137 x 0.070

l20.040 λ, 23 Ω2.87 x 4.57 0.113 x 0.180

l30.132 λ, 66 Ω10.08 x 0.89 0.397 x 0.035

l40.028 λ, 45 Ω2.08 x 1.78 0.082 x 0.070

l50.018 λ, 12 Ω1.27 x 10.06 0.050 x 0.396

l60.074 λ, 7 Ω4.98 x 17.68 0.196 x 0.696

l70.152 λ, 9 Ω10.34 x 13.56 0.407 x 0.534

l80.257 λ, 68 Ω19.76 x 0.84 0.778 x 0.033

l90.027 λ, 44 Ω1.98 x 1.83 0.078 x 0.072

l10 0.056 λ, 56 Ω4.22 x 1.22 0.166 x 0.048

l11 0.036 λ, 19 Ω2.57 x 5.74 0.101 x 0.226

l12 0.076 λ, 44 Ω5.64 x 1.80 0.222 x 0.071

1Electrical Characteristics are rounded.

210451E SCHEMATIC DWG FOR DATA SHEET.dwg

Data Sheet 7 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Test Circuit (cont.)

Test circuit assembly diagram* (not to scale)

Component Description Suggested Manufacturer P/N or Comment

C1 Capacitor, 10 µF, 35 V, Tant TE series Digi-Key PCS6106TR-ND, SMD

C2, C8 Capacitor, 0.01 µF ATC X08J103AFB

ATC 200B103MW

C3, C7 Capacitor, 1 µF ATC X24L105BVC

C4, C6 Capacitor, 7.5 pF ATC 100B 7R5

C5, C9 Capacitor, 10 pF ATC 100A 100

L1 Ferrite Bead Elne Magnetic #BDS31314.6-452

R1, R2 Resistor, 3.3K ohm, 1/4 W Digi-Key P3.3K ECT-ND

R3 Resistor, 10 ohm, 1/4 W Digi-Key P10 ECT-ND

*Gerber files for this circuit available on request

210451E ASSEMBLY DWG FOR DATA SHEET.dwg

Data Sheet 8 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S - flange: 2.54 micron [100 microinch] (min)

D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch].

Package Outline Specifications

Package H-30265-2

20.31

[.800]

10.16±0.25

[.400±.010]

2X 2.59±0.38

[.107 ±.015]

FLANGE 9.78

[.385]

2x 7.11

[.280]

7.11

[.280]

15.23

[.600]

4x 1.52

[.060]

(45° X 2.03

[.080])

2X R1.60

[.063]

LID 10.16±0.25

[.400±.010]

0.0381 [.0015] -A-

3.48±0.38

[.137±.015]

1.02

[.040]

SPH 1.57

[.062]

15.60±0.51

[.614±.020]

H-30265-2-1-2303

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 9 of 10 Rev. 06, 2008-02-13

PTF210451E

PTF210451F

h-31265-2_265-cases

(45° X 2.03

[.080])

2X 2.59±0.51

[.102±.020]

LID 10.16±0.25

[.400±.010]

FLANGE 10.16

[.400]

2X 7.11

[.280]

10.16±0.25

[.400±.010]

10.16

[.400]

1.02

[.040]

3.56±.38

[.140±.015]

SPH 1.57

[.062]

10.16

[.400]

15.49±.51

[.610±.020]

R1.27

[R.050]

4X R0.63

[R.025] MAX

|0.025 [.001]|-A-

Package Outline Specifications (cont.)

Package H-31265-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S - flange: 2.54 micron [100 microinch] (min)

D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch].

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 10 of 10 Rev. 06, 2008-02-13

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2008-02-13

Published by

Infineon Technologies AG

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

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or +1 408 776 0600 International

PTF210451EF

Confidential, Limited Internal Distribution

Revision History: 2008-02-13 Data Sheet

Previous Version: 2006-09-05, Data Sheet

Page Subjects (major changes since last revision)

all Show PTF210451F as released.

1, 2, 8, 9 Update package designation.

10 Update company information.