PESD3V3L4UG - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation 2004 Mar 23

DISCRETE SEMICONDUCTORS

PESDxL4UG series

Low capacitance quadruple ESD

protection diode array in SOT353

package

MBD12

2004 Mar 23 2

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

FEATURES

•Uni-directional ESD protection of up to four lines

•Low diode capacitance

•Maximum peak pulse power: Ppp = 30 W at tp= 8/20µs

•Low clamping voltage: VCL(R) = 12 V at Ipp =3A

•Ultra low leakage current: IRM = 5 nA at VRWM =5V

•ESD protection > 20 kV

•IEC 61000-4-2; level 4 (ESD).

APPLICATIONS

•Cellular handsets and accessories

•Portable electronics

•Computers and peripherals

•Communications systems

•Audio and video equipment.

DESCRIPTION

ESD protection diode arrays designed to protect up to four

transmissions or data lines from ElectroStatic Discharge

(ESD) damage and other transients.

MARKING

TYPE NUMBER MARKING

PESD3V3L4UG L1

PESD5V0L4UG L2

PINNING

PIN DESCRIPTION

1 cathode 1

2 common anode

3 cathode 2

4 cathode 3

5 cathode 4

handbook, halfpage

MGT580

Fig.1 Simplified outline (SOT353) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

VRWM reverse standoff voltage

PESD3V3L4UG 3.3 V

PESD5V0L4UG 5 V

Cddiode capacitance

PESD3V3L4UG 22 pF

PESD5V0L4UG 16 pF

number of protected lines 4

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PESD3V3L4UG −plastic surface mounted package; 5 leads SOT353

PESD5V0L4UG −plastic surface mounted package; 5 leads SOT353

2004 Mar 23 3

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Fig.5.

2. Between any of pins 1, 3, 4 or 5 and pin 2.

3. Device mounted on standard printed-circuit board.

ESD maximum ratings

Notes

1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses.

2. Measured from any of pins 1, 3, 4, or 5 to pin 2.

ESD standards compliance

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

Ipp peak pulse current 8/20 µs; notes 1 and 2

PESD3V3L4UG −3A

PESD5V0L4UG −2.5 A

Ppp peak pulse power 8/20 µs; notes 1 and 2 −30 W

IFSM non-repetitive peak forward

current tp= 1 ms; square pulse −3.5 A

IZSM non-repetitive peak reverse

current tp= 1 ms; square pulse

PESD3V3L4UG −0.9 A

PESD5V0L4UG −0.8 A

Ptot total power dissipation Tamb =25°C; note 3 −300 mW

PZSM non-repetitivepeakreversepower

dissipation tp= 1 ms; square pulse; see Fig.4 −6W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per diode

ESD electrostatic discharge capability IEC 61000-4-2 (contact

discharge); notes 1 and 2 20 kV

HBM MIL-Std 883 10 kV

STANDARD CONDITION

IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)

HBM MIL-Std 883, class 3 >4 kV

2004 Mar 23 4

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

THERMAL CHARACTERISTICS

Note

1. Solder point of common anode (pin 2).

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. Non-repetitive current pulse 8 ×20 ms exponentially decay waveform; see Fig.5.

2. Between any of pins 1, 3, 4 or 5 and pin 2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient all diodes loaded 410 K/W

Rth(j-s) thermal resistance from junction to solder point one diode loaded; note 1 200 K/W

all diodes loaded; note 1 185 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

VFforward voltage IF= 200 mA −1 1.2 V

IRM reverse leakage current

PESD3V3L4UG VRWM = 3.3 V −75 300 nA

PESD5V0L4UG VRWM =5V −525nA

VCL(R) clamping voltage

PESD3V3L4UG Ipp = 1 A; notes 1 and 2 −−8V

Ipp = 3 A; notes 1 and 2 −−12 V

PESD5V0L4UG Ipp = 1 A; notes 1 and 2 −−10 V

Ipp = 2.5 A; notes 1 and 2 −−13 V

VRWM reverse stand-off voltage

PESD3V3L4UG −−3.3 V

PESD5V0L4UG −−5V

VBR breakdown voltage IZ=1mA

PESD3V3L4UG 5.32 5.6 5.88 V

PESD5V0L4UG 6.46 6.8 7.14 V

rdiff differential resistance IR=1mA

PESD3V3L4UG −−200 Ω

PESD5V0L4UG −−100 Ω

Cddiode capacitance

PESD3V3L4UG VR= 0 V; f = 1 MHz −22 28 pF

VR= 5 V; f = 1 MHz −12 17 pF

PESD5V0L4UG VR= 0 V; f = 1 MHz −16 19 pF

VR= 5 V; f = 1 MHz −811pF

2004 Mar 23 5

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

handbook, halfpage

1234

VR (V)

(pF)

MCE657

PESD3V3L4UG

PESD5V0L4UG

Fig.2 Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

10−1

MCE658

10−210−11tp (ms)

IZSM

(A)

PESD3V3L4UG

PESD5V0L4UG

Fig.3 Maximum non-repetitive peak reverse

current as a function of pulse time.

handbook, halfpage

102

MCE659

10−210−11tp (ms)

PZSM

(W)

PESD3V3L4UG

PESD5V0L4UG

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse

duration (square pulse).

handbook, halfpage

010

e−t

20 t (µs)

Ipp

(%)

120

MLE218

100 % Ipp; 8 µs

50 % Ipp; 20 µs

Fig.5 8/20 µs pulse waveform according to

IEC 61000-4-5.

2004 Mar 23 6

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

mce656

450 Ω

50 Ω

Note 1: attenuator is only used for open

socket high voltage measurements

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 ΩD.U.T.: PESDxL4UG

RG 223/U

50 Ω coax

ESD TESTER DIGITIZING

OSCILLOSCOPE

10×

ATTENUATOR

note 1

GND GND1

GND2

GND

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 5 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 5 V/div

horizontal scale = 50 ns/div

PESD5V0L4UG

PESD3V3L4UG

Fig.6 ESD clamping test set-up and waveforms.

2004 Mar 23 7

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

(2)

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

2004 Mar 23 8

Philips Semiconductors Product speciﬁcation

Low capacitance quadruple ESD

protection diode array in SOT353 package PESDxL4UG series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

atthese orat anyother conditionsabove thosegiven inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingor sellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Contact information

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Printed in The Netherlands R76/01/pp9 Date of release: 2004 Mar 23 Document order number: 9397 750 12226