APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
A
S
G
D
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 51
ID Continuo us Drain Current Tc = 80°C 39
IDM Pulsed Drain current 204
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 75 mΩ
PD Maximum Power Dissipation Tc = 25°C 290 W
IAR Avalanche current (repetitive and non repetitive) 51 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500 mJ
IFAV
Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C 30
IFRMS RMS Forward Current (Square wave, 50% duty) 39 A
VDSS = 500V
RDSon = 75mΩ max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Fe ature s
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq uenc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant
ISOTOP® Buck chopper
MOSFET Power Module
A
D
G
S
APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V, VDS = 500V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 400V T
j = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25.5A 75 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 5590
Coss Output Capacitance 1180
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 85
pF
Qg Total gate Charge 123
Qgs Gate – Source Charge 33
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A 65
nC
Td(on) Tur n-on Delay Ti me 10
Tr Rise Time 20
Td(off) Turn-off Delay Time 21
Tf Fall Time
Resistive Switching
VGS = 15V
VBus = 250V
ID = 51A
RG = 0.6Ω 5
ns
Eon Tur n-o n Switchi ng Energy 755
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5Ω 726
µJ
Eon Tur n-o n Switchi ng Energy 1241
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5Ω 846 µJ
APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF = 30A 1.6 1.8
IF = 60A 1.9
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.4
V
VR = 600V Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA
CT Junction Capacitance VR = 200V 44 pF
Reverse Recovery Time IF=1A,VR=30V
di/dt =100A/µs Tj = 25°C 23
Tj = 25°C 85
trr
Reverse Recovery Time Tj = 125°C 160
ns
Tj = 25°C 4
IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A
Tj = 25°C 130
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 700 nC
trr Reverse Recovery Time 70 ns
Qrr Reverse Recovery Charge 1300 nC
IRRM Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
30 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
MOSFET 0.27
RthJC Junction to Case Thermal Resistance Diode 1.21
RthJA Junction to Ambient (IGBT & Diode) 20
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4 mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
Typical MOSFET Performance Curve
APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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Typical Diode Performance Curve
APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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APT50M75JLLU3
APT50M75JLLU3 – Rev 1 June, 2006
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SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP® is a registered trademark of ST Microelectronics NV
M icros e mi re se rve s the rig ht to c ha nge, witho ut notice , t he s pe cificatio ns and info rmatio n co nta i ne d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source Gate
Drain
Anode
