SQJ914EP
www.vishay.com Vishay Siliconix
S17-0852-Rev. A, 05-Jun-17 2Document Number: 77311
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 30 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 30 V - - 1
μA VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 30 V, TJ = 175 °C - - 250
On-state drain current a ID(on) VGS = 10 V VDS ≥ 5 V 15 - - A
Drain-source on-state resistance a RDS(on)
VGS = 10 V ID = 4.5 A - 0.0098 0.0120
Ω
VGS = 4.5 V ID = 3 A - 0.0139 0.0170
VGS = 10 V ID = 4.5 A, TJ = 125 °C - - 0.0188
VGS = 10 V ID = 4.5 A, TJ = 175 °C - - 0.0227
Forward transconductance b gfs VDS = 15 V, ID = 4 A - 25 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = 15 V, f = 1 MHz
- 850 1110
pF Output capacitance Coss - 167 220
Reverse transfer capacitance Crss -6080
Total gate charge c Qg
VGS = 10 V VDS = 15 V, ID = 5 A
-1525
nC Gate-source charge c Qgs -3-
Gate-drain charge c Qgd -3-
Gate resistance Rgf = 1 MHz 0.7 1.6 2.5 Ω
Turn-on delay time c td(on)
VDD = 15 V, RL = 3.8 Ω
ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω
-1120
ns
Rise time c tr-510
Turn-off delay time c td(off) -2140
Fall time c tf-510
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM --90A
Forward voltage VSD IF = 4 A, VGS = 0 V - 0.79 1.2 V
Body diode reverse recovery time trr
IF = 3 A, di/dt = 100 A/μs
-2250ns
Body diode reverse recovery charge Qrr -1840nC
Reverse recovery fall time ta-14-
ns
Reverse recovery rise time tb-8-
Body diode peak reverse recovery current IRM(REC) --1.4- A