INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
E
G
n-channel
C
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF Diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead free package
Benefits
Device optimized for induction heating and soft switching
applications
High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
G
C
E
Gate Collector Emitter
TO-247AD
IRG7PH42UD1MPbF
1 www.irf.com © 2012 International Rectifier April 26, 2012
VCES = 1200V
IC = 45A, TC = 100°C
TJ(max) = 150°C
VCE(on) typ. = 1.7V @IC= 30A
Base part number Package Type Orderable Part Number
Form
Quantity
IRG7PH42UD1MPbF
TO-247AD
Tube
IRG7PH42UD1MPbF
Standard Pack
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200
V
(BR) Transient
Repetitive Transient Collector-to-Emitter Voltage
i
1300
I
C
@ T
C
= 25°C Continuous Collector Current 85
g
I
C
@ T
C
= 100°C Continuous Collector Current 45
I
CM
Pulse Collector Current, V
GE
=15V
dh
200
I
LM
Clamped Inductive Load Current, V
GE
=20V
c
120
I
F
@ T
C
= 25°C Diode Continous Forward Current 70
I
F
@ T
C
= 100°C Diode Continous Forward Current 35
I
FRM
Diode Repetitive Peak Forward Current
d
120
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 313
P
D
@ T
C
= 100°C Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
f
––– ––– 0.4
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode)
f
––– ––– 1.05
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C
°C/W
V
G
G
E
C
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IRG7PH42UD1MPbF
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
FBSOA operating conditions only
VGE = 0V, TJ = 75°C, PW 10μs.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(B R)CES
Collector-to-Emitter Breakdown Voltage 1200 V V
GE
= 0V, I
C
= 100μA
e
Δ
V
(BR)CES
/
ΔT
J
Temperature Coeff. of Breakdown Voltage 1.2 V/°C V
GE
= 0V, I
C
= 2.0mA (25°C-150°C)
—1.72.0 I
C
= 30A, V
GE
= 15V, T
J
= 25°C
—2.0 I
C
= 30A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V V
CE
= V
GE
, I
C
= 1.0mA
gfe Forward Transconductance 32 S V
CE
= 50V, I
C
= 30A, PW = 80μs
1.0 100 V
GE
= 0V, V
CE
= 1200V
230 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
1.15 1.30 I
F
= 30A
—1.10— I
F
= 30A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) 180 270 I
C
= 30A
Q
ge
Gate-to-Emitter Charge (turn-on) 24 36 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) 70 110 V
CC
= 600V
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss 1210 1450 R
G
= 10Ω, L = 200μH,T
J
= 25°C
Energy losses include tail
t
d(off)
Turn-Off delay time 270 290 I
C
= 30A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time 35 43 R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss 1936 μJR
G
= 10
Ω
, L = 200μH,T
J
= 150°C
Energy losses include tail
t
d(off)
Turn-Off delay time 300 ns I
C
= 30A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time 160 R
G
= 10Ω, L = 200μH, T
J
= 150°C
C
ies
Input Capacitance 3390 V
GE
= 0V
C
oes
Output Capacitance 130 pF V
CC
= 30V
C
res
Reverse Transfer Capacitance 83 f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V
Conditions
μA
V
V
μJ
ns
V
CE(on)
Collector-to-Emitter Saturation Voltage
I
CES
Collector-to-Emitter Leakage Current
V
FM
Diode Forward Voltage Drop
IRG7PH42UD1MPbF
3 www.irf.com © 2012 International Rectifier April 26, 2012
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
25 50 75 100 125 150
TC, Case Temperature (°C)
0
20
40
60
80
100
IC, Collector Current (A)
LIMITED BY PACKAGE
25 50 75 100 125 150
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
25 50 75 100 125 150
TJ , Temperature (°C)
0.5
0.6
0.7
0.8
0.9
1.0
VGE(th),
Gate Threshold Voltage (Normalized)
IC = 1.0mA
0246810
V CE
(V)
0
20
40
60
80
100
120
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE
= 12V
VGE
= 10V
VGE
= 8.0V
0246810
VCE
(V)
0
20
40
60
80
100
120
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
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IRG7PH42UD1MPbF
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
246810
VGE, Gate-to-Emitter Voltage
(V)
0
20
40
60
80
100
120
ICE, Collector-to-Emitter Current
(A)
TJ = 25°C
TJ = 150°C
0.0 0.5 1.0 1.5 2.0
VF (V)
0
20
40
60
80
100
120
140
IF (A)
25°C
150°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
IRG7PH42UD1MPbF
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Fig. 18 - Typical Gate Charge vs. VGE
ICE = 30A; L = 680μH
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 50 100 150 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
=600V
VCES
= 400V
020 40 60 80 100 120
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tdOFF
tF
025 50 75 100 125
RG (Ω)
1500
2500
3500
4500
5500
6500
Energy (μJ)
EOFF
010 20 30 40 50 60 70
IC (A)
100
1000
Swiching Time (ns)
tdOFF
tF
0 10203040506070
IC (A)
0
1000
2000
3000
4000
5000
Energy
(μJ)
EOFF
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IRG7PH42UD1MPbF
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.01186 0.00001
0.39298 0.000547
0.43450 0.003563
0.22096 0.021596
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1306 0.000313
0.1752 0.002056
0.0814 0.008349
0.0031 0.0431
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
IRG7PH42UD1MPbF
7 www.irf.com © 2012 International Rectifier April 26, 2012
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+
-
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
G force
C sens
e
100K
DUT
0.0075μF
D1 22K
E force
C force
E sense
-100
0
100
200
300
400
500
600
700
800
-1-0.500.511.52
time(μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
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IRG7PH42UD1MPbF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD Part Marking Information
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
TO-247AD package is not recommended for Surface Mount Application.
2x
c
"A"
"A"
E
E2/2
Q
E2
2X
L1
L
D
A
e
2x b2 3x b
LEAD TIP
SEE
VI E W " B "
b4
B
A
Ø .010 BA
A2
A1
Ø .010 BA
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010 BA
VI E W: "B "
S E CT ION: C-C, D- D, E -E
(b, b2, b4)
(c)
BASE METAL
PLATING
VIE W: "A" - "A"
YEAR 1 = 2001
DAT E CODE
PART NUMBER
INTERNAT IONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indi cates "L ead- F r ee" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASS EMBLE D ON WW 35, 2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
T HIS IS AN IRFPE30
LOT CODE 5657
IRG7PH42UD1MPbF
9 www.irf.com © 2012 International Rectifier April 26, 2012
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice.
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Applicable version of JEDEC standard at the time of product release.
Date
Comments
4/25/2013 Corrected part number from "IRG7PH42UD1M" to "IRG7PH42UD1MPbF".
Revision History
N/A
RoHS compliant Yes
Qualification information
Qualification level Industrial
(per JE DEC JE S D47F
)
††
Moisture Sensitivity Level TO-247AD
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
International Rectifier:
IRG7PH42UD1MPBF