7MBR50NE060 IGBT Modules
IGBT MODULE
600V / 50A / PIM
Features
· High Speed Switching
· Voltage Driv e
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inver ter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Ave rage output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Conver ter Brake Inverter
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Tj
Tstg
Viso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
600
±20
50
100
50
200
600
±20
50
100
200
600
1
50
800
900
50
350
648
+150
-40 to +125
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
Converter Brake Brake (IGBT) Inver ter (IGBT)
(FWD)
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A
-Ic=50A
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=50A
VGE=±15V
RG=51 ohm
IF=50A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A, VGE=15V
VCC=300V
IC=50A
VGE=±15V
RG=51ohm
VR=600V
IF=50A
VR=800V
1.0
20
7.5
2.8
3.0
1.2
0.6
1.0
0.35
0.3
1.0
0.1
2.8
0.8
0.6
1.0
0.35
1.0
0.6
1.55
1.0
3300
4.5
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
0.63
1.60
0.63 °C/W
2.10
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal Characteristics
IGBT Module 7MBR50NE060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)
IGBT Module 7MBR50NE060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
125
100
75
50
25
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
10
8
6
4
2
00 5 10 15 20 25 0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10 0 20 40 60 80
Collector current : Ic [A] Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
10
125
100
75
50
25
0 20 40 60 80
IGBT Module 7MBR50NE060
Switching time vs. RG
Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm] 100 Gate charge : Qg [nC]
0 50 100 150 200 250 300
100
1000
500
400
300
200
100
0
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Forward current : IF [A]
125
100
75
50
25
00 1 2 3 4
Gate-Emitter voltage : VGE [V]
0
5
15
20
25
Forward voltage : VF [V]
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
10
100
Thermal resistance : Rth (j-c) [°C/W]
Transient thermal resistance
0.1
1
0.001 0.01 0.1 1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 51 ohm
0 20 40 60 80 100
<< >
500
400
300
200
100
00 100 200 300 400 500 600
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
10
10 10
FWD
IGBT Module 7MBR50NE060
Switching loss vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V
Switching loss : Eon, Eoff, Err [mJ /cycle]
Collector current : Ic [A]
0
2
1
3
4
0 20 40 60 80 Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
0.1
1
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Forward current : IF [A]
60
50
40
30
20
10
00 0.5 1.0 1.5 2.0
Forward voltage : VF [V]
Converter Diode
Forward current vs. Forward voltage
5
IGBT Module 7MBR50NE060
Outline Drawings, mm
