CPH5506-TL-E - ON Semiconductor

CPH5506

No.6590-1/8

62012 TKIM/71400 TSIM TA-2880

http://semicon.sanyo.com/en/network

Ordering number : EN6590A

Applications

• Relay drivers, Lamp drivers, Motor drivers

Features

• Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

mounting

• The CPH5506 consists of two chips encapsulated in a package which are equivalent to the CPH3115 and

the CPH3215, respectively

• Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)

Speciﬁ cations ( ): PNP

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--30)40 V

Collector-to-Emitter Voltage VCEO (--)30 V

Emitter-to-Base Voltage VEBO (--)5 V

Collector Current IC(--)1.5 A

Collector Current (Pulse) ICP (--)5 A

Base Current IB(--)300 mA

Collector Dissipation PCMounted on a ceramic board (600mm2×0.8mm) 0.9 W

Total Power Dissipation PTMounted on a ceramic board (600mm2×0.8mm) 1.2 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions

unit : mm (typ)

7017A-009

CPH5506

PNP/NPN Epitaxial Planar Silicon Transistors

DC / DC Converter Applications

Product & Package Information

• Package : CPH5

• JEITA, JEDEC : SC-74A, SOT-25

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL Marking

Electrical Connection

CPH5506-TL-E

1 : Collector (NPN TR)

2 : Collector (PNP TR)

3 : Base (PNP TR)

4 : Emitter Common

5 : Base (NPN TR)

SANYO : CPH5

453

2.9

0.05

0.4

2.8

1.6

0.2

0.6 0.6

0.9

0.2

0.15

0.95

LOT No.

B1 EC B2

C1 C2

SANYO Semiconductors

DATA SHEET

CPH5506

No.6590-2/8

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)0.1 μA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA

DC Current Gain hFE VCE=(--)2V, IC=(--)100mA 200 560

Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)300mA (450)500 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (9)8 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)750mA, IB=(--)15mA

(--250)150

(--375)225

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)750mA, IB=(--)15mA (--)0.85 (--)1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--30)40 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)30 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V

Turn-On Time ton See speciﬁ ed Test Circuit. 35 ns

Storage Time tstg (115)205 ns

Fall Time tf30 ns

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

CPH5506-TL-E CPH5 3,000pcs./reel Pb Free

VRRB

VCC=12VVBE= --5V

50Ω

INPUT

OUTPUT

16Ω

100μF 470μF

PW=20μsIB1

D.C.1% IB2

20IB1= --20IB2=IC=750mA

For PNP, the polarity is reversed.

CPH5506

No.6590-3/8

--2.0

--1.0

--1.8

--1.6

--1.4

--1.2

--0.8

--0.6

--0.4

--0.2

IC -- VCE

0 --0.2--0.1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0.20.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

2.0

1.0

IC -- VCE

0Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

Collector Current, IC -- A

--1.6

--1.4

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

00 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2

VCE= --2V

--25°C

25°C

Ta=75°C

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

Collector Current, IC -- A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 0.2 0.4 0.6 0.8 1.21.0

--25°C

VCE=2V

Ta=75°C

25°C

IT01673

IT01675

IT01674

IT01676

[PNP]

--50mA

--40mA

--30mA

--20mA

--10mA

--2mA

--4mA

--6mA

--8mA

IB=0mA

[NPN]

[PNP] [NPN]

50mA

40mA

30mA

20mA

10mA

8mA

6mA

4mA

2mA

IB=0mA

Collector Current, IC -- A

hFE -- IC

DC Current Gain, hFE

1000

10 23 57

--0.01 --1.0--0.1 23 57 23

100

VCE= --2V

--25°C

25°C

Ta=75°C

Collector Current, IC -- A

fT -- IC

Gain Bandwidth Product, fT -- MHz

1000

23 57 23 257

--0.01 --1.0--0.1

100

Collector Current, IC -- A

hFE -- IC

DC Current Gain, hFE

1000

10 23 57

0.01 1.0

0.1 23 57 23

100

VCE=2V

--25°C

25°C

Ta=75°C

Collector Current, IC -- A

fT -- IC

Gain Bandwidth Product, fT -- MHz

1000

100

223 57 23 257

0.01 1.00.1

VCE= --10V VCE=10V

IT01677

IT01679

IT01678

IT01680

[PNP] [NPN]

CPH5506

No.6590-4/8

Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Output Capacitance, Cob -- pF

100

23 57

--0.1 --1.0 23 57

--10 23 5 Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Output Capacitance, Cob -- pF

100

223 57

0.1 1.0 23 57

10 23 5

f=1MHz

Collector Current, IC -- A

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

1.0

23 57

0.01 1.00.1 23 57 23

0.1

0.01

Collector Current, IC -- A

VCE(sat) -- IC

--1.0

--0.01 23 57

--0.01 --1.0--0.1 23 57 23

--0.1

IC / IB=20

--25°C

25°C

Ta=75°C

IT01681

IT01683

IT01682

IT01684

f=1MHz

IC / IB=20

--25°C

Ta=75°C

25°C

[PNP] [NPN]

Collector Current, IC -- A

VCE(sat) -- IC

1.0

0.01 23 57

0.01 1.00.1 23 57 23

0.1

IC / IB=50

75°C

Ta= --25°C

Collector Current, IC -- A

VBE(sat) -- IC

0.1 23 57

0.01 1.00.1 23 57 23

1.0

IC / IB=50

Ta= --25°C

25°C

75°C

Collector Current, IC -- A

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

23 57

--0.01

--0.01 --1.0--0.1 23 57 23

IC / IB=50

75°C

Ta= --25°C

--1.0

--0.1

Collector Current, IC -- A

VBE(sat) -- IC

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

--10

--0.1 23 57

--0.01 --1.0--0.1 23 57 23

--1.0

IC / IB=50

Ta= --25°C

75°C

IT01685

IT01687

IT01686

IT01688

25°C

[PNP] [NPN]

CPH5506

No.6590-5/8

Ambient Temperature, Ta -- °C

PC -- Ta

Collector Dissipation, PC -- W

1.4

0.2

0.4

0.6

0.8

1.0

0.9

1.2

0 20 40 60 80 100 120 140 160

Collector-to-Emitter Voltage, VCE -- V

A S O

Collector Current, IC -- A

1.0

0.1

0.01 23 57 23 57 23 57

0.1 1.0 10 100

Ta=25°C

Single pulse

Mounted on a ceramic board(600mm2

0.8mm)

For PNP, minus sign is omitted

DC operation

10ms

ICP=5A

IC=1.5A

IT02363 IT02364

1ms

Total Dissipation

1 unit

Collector Dissipation, PC(TR1) -- W

PC(TR2) -- PC(TR1)

Collector Dissipation, PC(TR2) -- W

1.0

0.2

0.1

0.4

0.3

0.6

0.5

0.7

0.8

0.9

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

IT02365

10μs

100μs

500μs

100ms

Mounted on a ceramic board(600mm2×0.8mm)

[PNP / NPN] [PNP / NPN]

[PNP / NPN]

CPH5506

No.6590-6/8

Embossed Taping Speciﬁ cation

CPH5506-TL-E

CPH5506

No.6590-7/8

Outline Drawing Land Pattern Example

CPH5506-TL-E

Mass (g) Unit

0.02

* For reference

mm Unit: mm

0.6

2.4 1.4

0.95 0.95

CPH5506

PS No.6590-8/8

This catalog provides information as of June, 2012. Speciﬁ cations and information herein are subject

to change without notice.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

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grant any guarantee thereof. If you should intend to use our products for new introduction or other application

different from current conditions on the usage of automotive device, communication device, office equipment,

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prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be

solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer's

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,

high current, high voltage, or drastic temperature change, even if it is used within the range of absolute

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