1C3D10065I Rev. C
Features
• 650-VoltSchottkyRectier
• CeramicPackageprovides2.5kVisolation
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonVF
Benets
• ElectricallyIsolatedPackage
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• HVAC
• SwitchModePowerSupplies
Package
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IFContinuousForwardCurrent
19
10
8.5
A
TC=25˚C
TC=125˚C
TC=135˚C
IFRM RepetitivePeakForwardSurgeCurrent 28.6
17.7 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
IFSM Non-RepetitivePeakForwardSurgeCurrent 80
70 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
Ptot PowerDissipation 60
26 WTC=25˚C
TC=110˚C
TJOperatingJunctionRange -55to
+175 ˚C
Tstg,TcStorageTemperatureandCaseTemperature -55to
+150 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C3D10065I IsolatedTO-220-2 C3D10065I
C3D10065I
Silicon Carbide Schottky Diode
Z-Rec™RectifieR
PIN1
PIN2 CASE
VRRM= 650V
IF (TC=125˚C) =10A
Qc = 25nC