1C3D10065I Rev. C
Features
• 650-VoltSchottkyRectier
• CeramicPackageprovides2.5kVisolation
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonVF
Benets
• ElectricallyIsolatedPackage
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• HVAC
• SwitchModePowerSupplies
Package
 
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IFContinuousForwardCurrent
19
10
8.5
A
TC=25˚C
TC=125˚C
TC=135˚C
IFRM RepetitivePeakForwardSurgeCurrent 28.6
17.7 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
IFSM Non-RepetitivePeakForwardSurgeCurrent 80
70 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
Ptot PowerDissipation 60
26 WTC=25˚C
TC=110˚C
TJOperatingJunctionRange -55to
+175 ˚C
Tstg,TcStorageTemperatureandCaseTemperature -55to
+150 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C3D10065I IsolatedTO-220-2 C3D10065I
C3D10065I
Silicon Carbide Schottky Diode
Z-RecRectifieR
PIN1
PIN2 CASE
VRRM= 650V
IF (TC=125˚C) =10A
Qc  = 25nC
2C3D10065I Rev. C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.0
1.8
2.4 VIF=10ATJ=25°C
IF=10ATJ=175°C
IRReverseCurrent 12
24
60
220 μA VR=650VTJ=25°C
VR=650VTJ=175°C
QCTotalCapacitiveCharge 25 nC
VR=650V,IF=10A
di/dt=500A/μs
TJ=25°C
CTotalCapacitance
480
50
42
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC PackageThermalResistancefromJunctiontoCase 2.6 °C/W
Typical Performance
0
2
4
6
8
10
12
14
16
18
20
00.5 11.5 22.5 33.5
VF (V)
IF (A)
Figure1.ForwardCharacteristics
0
2
4
6
8
10
12
0100 200 300 400 500 600 700 800
Current (A)
Voltage (V)
Figure2.ReverseCharacteristics
VR (V)
IR (μA)
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
3C3D10065I Rev. C
0
5
10
15
20
25
30
35
40
45
25
50
75
100
175
Figure3.CurrentDerating
Typical Performance
20%Duty
30%Duty
50%Duty
70%Duty
DC
0
10
20
30
40
50
60
0200 400 600 800 1000
0
50
100
150
200
250
300
350
400
450
500
0.1 110 100 1000
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
0.0
10.0
20.0
30.0
40.0
50.0
60.0
25 50 75 100 125 150 175
Qrr (nC)
VR (V)
C (pF)
VR (V)
Figure4.PowerDerating
PTot (W)
TC ˚C
IF (A)
TC ˚C
4C3D10065I Rev. C
0.001
0.01
0.1
1
10
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 100
Typical Performance
Figure7.TransientThermalImpedance
Thermal Resistance (˚C/W)
T (sec)
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius
Diode Model
VfT=VT+If*RT
VT=0.98+(TJ*-1.6*10-3)
RT=0.04+(TJ*0.522*10-3)
5C3D10065I Rev. C
Package Dimensions
Recommended Solder Pad Layout
Part Number Package Marking
C3D10065I IsolatedTO-220-2 C3D10065I
Measurements shown in inches
 TO-220-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C3D10065I Rev. C
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trafc control systems.
Notes
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D10065I