1
Rectifier Device Data
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. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B1035, B1045
MAXIMUM RATINGS
Rating Symbol MBR1035 MBR1045 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 45 Volts
Average Rectified Forward Current (Rated VR)
TC = 135°CIF(AV) 10 10 Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 135°CIFRM 20 20 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 150 Amps
Peak Repetitive Reverse Surge Current
(2.0 µs, 1.0 kHz) See Figure 12 IRRM 1.0 1.0 Amp
Operating Junction Temperature TJ
*
65 to +150
*
65 to +150 °C
Storage Temperature Tstg
*
65 to +175
*
65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 10000 V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case RθJC 2.0 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amps, TC = 125°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.57
0.72
0.84
0.57
0.72
0.84
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR15
0.1 15
0.1
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBR1035/D
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SEMICONDUCTOR TECHNICAL DATA
31, 4
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SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
20 to 45 VOLTS
CASE 221B–03
TO–220AC
PLASTIC
MBR1045 is a
Motorola Preferred Device
1
3
4
Rev 2
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2Rectifier Device Data
Figure 1. Maximum Forward Voltage
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20 3.010
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
, REVERSE CURRENT (mA)IR
20 3025
100
2.0 100
70
IFSM, PEAK HALF–W AVE CURRENT (AMPS)
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
35 40 5045
TJ = 150
°
C
Figure 2. Typical Forward Voltage
Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability
7.05.0 3020 7050
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
25
°
C
0.2
1.2
vF, INSTANTANEOUS VOLT AGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150
°
C
0.2
100
°
C25
°
C100
°
C25
°
C
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3
Rectifier Device Data
(CAPACITIVE LOAD)IPK
IAV
+
5
110
TC, CASE TEMPERATURE (
°
C)
15
10
5.0
0
TA, AMBIENT TEMPERATURE (
°
C)
800
16
8.0
4.0
2.0
040120
, A VERAGE FORWARD CURRENT (AMPS)IF(AV)
130 140
20
20 160
6.0
150 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, R
q
JA = 16°C/W
60 120100 140
2.00
IF(AV), A VERAGE FORW ARD CURRENT (AMPS)
8.0
5.0
4.0
2.0
0
TA, AMBIENT TEMPERATURE (
°
C)
800
5.0
4.0
2.0
1.0
0404.0
, AVERAGE FORW ARD POWER DISSIPATION (W ATTS)P F(AV)
6.0 108.0
10
20 160
3.0
IF(AV), A VERAGE FORW ARD CURRENT (AMPS)
12 1614
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
60 120100 140
, A VERAGE FORWARD CURRENT (AMPS)IF(AV)
14
10
12
3.0
1.0
9.0
7.0
6.0
r(t), TRANSIENT THERMAL RESIST ANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL = Ppk
R
θ
JL [D + (1 – D)
r(t1 + tp) + r(tp) – r(t1)] where:
TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp.
1000
Figure 9. Thermal Response
dc
TJ = 150
°
C
SINE W AVE
RESISTIVE LOAD
SQUARE
WAVE
(CAPACITIVE LOAD)IPK
IAV
+
5
20
10
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
20
10
IPK
IAV
+
p
(RESISTIVE LOAD)
(CAPACITIVE LOAD)IPK
IAV
+
20,10,5
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
IPK
IAV
+
p
(RESISTIVE LOAD)
dc
SQUARE
WAVE
IPK
IAV
+
p
(RESISTIVE LOAD)
(CAPACITIVE LOAD)IPK
IAV
+
20,10,5
RATED VOLTAGE APPLIED
R
q
JA = 60
°
C/W
0.07
0.7
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4Rectifier Device Data
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 10.)
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 percent at
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow through the
diode capacitance, which lowers the dc output voltage.
2.0
µ
s
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0–10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
+150 V, 10 mAdc
4.0
µ
F
+
VR, REVERSE VOLT AGE (VOLTS)
0.5
1500
1000
500
300
150 0.10.05 50
700
C, CAPACITANCE (pF)
Figure 10. Capacitance
0.2 2.01.0 5.0
200
MAXIMUM
TYPICAL
10 20
UL RATED EPOXY
COPPER
ALUMINUM WIRE
ANODESCHOTTKY CHIP (See View A–A)
CATHODE
SOLDER DIPPED
COPPER LEADS
3
1
4
Motorola builds quality and reliability into its Schottky Rectifiers.
First is the chip, which has an interface metal between the
barrier metal and aluminum–contact metal to eliminate any
possible interaction between the two. The indicated guardring
prevents dv/dt problems, so snubbers are not mandatory. The
guardring also operates like a zener to absorb over–voltage
transients.
Second is the package. The Schottky chip is bonded to the
copper heat sink using a specially formulated solder . This gives the
unit the capability of passing 10,000 operating thermal–fatigue
cycles having a
D
TJ of 100°C. The epoxy molding compound is
rated per UL 94, V0 @ 1/8. Wire bonds are 100% tested in
assembly as they are made.
Third is the electrical testing, which includes 100% dv/dt at 1600
V/
m
s and reverse avalanche as part of device characterization.
GUARDRING
PLATINUM BARRIER METAL OXIDE
PASSIVATION
ALUMINUM CONTACT MET AL
SCHOTTKY CHIP — View A–A
Figure 11. Schottky Rectifier
Figure 12. Test Circuit for dv/dt and
Reverse Surge Current
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5
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 221B–03
(TO–220AC)
ISSUE B
B
R
J
D
G
L
H
Q
T
U
A
K
CS
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.147 3.61 3.73
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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6Rectifier Device Data
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