BSS123WQ
Document number: DS37469 Rev. 1 - 2
1 of 5
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September 2014
© Diodes Incorporated
BSS123WQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
ID
TA = +25°C
100V
6.0 @ VGS = 10V
170mA
Description
This MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number
Compliance
Case
Packaging
BSS123WQ-7-F
Automotive
SOT323
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
2002
2003
2004
2005
2006
2014
2015
2016
2017
2018
2019
2020
2021
Code
N
P
R
S
T
B
C
D
E
F
G
H
I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
D
S
G
SOT323
Top View
Equivalent Circuit
Top View
GS
D
K23
YM
e3
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
BSS123WQ
Document number: DS37469 Rev. 1 - 2
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BSS123WQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Drain-Gate Voltage RGS 20K
VDGR
100
V
Gate-Source Voltage Continuous
VGSS
20
V
Drain Current (Note 6) Continuous
Pulsed
ID
IDM
170
680
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
PD
200
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
100
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1.0
10
µA
nA
VDS = 100V, VGS = 0V
VDS = 20V, VGS = 0V
Gate-Body Leakage, Forward
IGSSF
50
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.8
1.4
2.0
V
VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)
6.0
10
VGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
Forward Transconductance
gFS
80
370
mS
VDS = 10V, ID = 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage
VSD
0.84
1.3
V
VGS = 0V, IS = 0.34A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
29
60
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
10
15
pF
Reverse Transfer Capacitance
Crss
2
6
pF
SWITCHING CHARACTERISTICS(Note 8)
Turn-On Rise Time
tr
8
ns
VDD = 30V, ID = 0.28A,
RGEN = 6.0, VGS = 10V
Turn-Off Fall Time
tf
16
ns
Turn-On Delay Time
tD(ON)
8
ns
Turn-Off Delay Time
tD(OFF)
13
ns
Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
BSS123WQ
Document number: DS37469 Rev. 1 - 2
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September 2014
© Diodes Incorporated
BSS123WQ
0
0.2
0.7
01345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 0 75 100 125 150
V NORMALIZED THRESHOLD VOLTAGE
GS(th),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25 50
V = V
I = 250 A
DS GS
D
0.4
0.8
1.2
-50 075 100 125 150
R NORMALIZED ON-RESISTANCE
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
0
50
0515 20 25
C, CAPACITANCE (pF)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
0
50
100
100 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
A
150
200
250
0
BSS123WQ
Document number: DS37469 Rev. 1 - 2
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September 2014
© Diodes Incorporated
BSS123WQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.650 BSC
F
0.375
0.475
0.425
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.00
0.10
0.05
K
0.90
1.00
0.95
L
0.25
0.40
0.30
M
0.10
0.18
0.11
a
8°C
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
XE
Y
C
Z
CB
K
J
M
H
L
A
G
D
a
BSS123WQ
Document number: DS37469 Rev. 1 - 2
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September 2014
© Diodes Incorporated
BSS123WQ
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