V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Features
♦ Switch & Attenuator Die
♦ Extensive Selection of I-Region Lengths
♦ Hermetic
♦ Glass Passivated CERMACHIP®
♦ Oxide Passivated Planar Chips
♦ Voltage Ratings to 3000V
♦ Fast Switching Speed
♦ Low Loss
♦ High Isolation
♦ RoHS Compliant
Absolute Maximum Ratings1
TAMB = +25°C (Unless otherwise specified)
Description
M/A-COM Technology Solutions offers a comprehensive
line of low capacitance, planar and mesa, silicon PIN
diode chips which use ceramic glass and silicon nitride
passivation technology. The Silicon PIN Chip series of
devices cover a broad spectrum of performance
requirements for control circuit applications. They are
available in several choices of I-region lengths and have
been optimally designed to minimize parametric trade offs
when considering low capacitance, low series resistance,
and high breakdown voltages. Their small size and low
parasitics, make them an ideal choice for broadband, high
frequency, micro-strip hybrid assemblies.
The attenuator line of PIN diode chips are a planar or
mesa construction and because of their thicker I-regions
and predictable Rs vs. I characteristics, they are well
suited for low distortion attenuator and switch circuits.
Incorporated in the chip’s construction is M/A-COM
Tech’s, time proven, hard glass, CERMACHIP® . The
hard glass passivation completely encapsulates the entire
PIN junction area resulting in a hermetically sealed chip
which has been qualified in many military applications.
These CERMACHIP® diodes are available in a wide
range of voltages, up to 3,000 volts, which are capable of
controlling kilowatts of RF power.
Many of M/A-COM Tech’s silicon PIN diode chips are also
available in several different package styles. Please refer to
the “Packaged PIN Diode Data sheet” for case style availabili ty
and electrical specifications located on the M/A-COM Tech
website at :
macomtech.com/datasheets/packagedpindiodes
and for high voltage, high power devices at :
macomtech.com/datasheets/MA4PK2000_3000_Series
Parameter Absolute Maximum
Forward Current (IF) Per P/N Rs vs. I Graph
Reverse Voltage (VR) Per Specification Table
Power Dissipation (W)
175°C – Tambient°C
Theta
Operating Temperature -55°C to +175°C
Storage Temperature -55°C to +200°C
Junction Temperature +175°C
Mounting Temperature +320°C for 10 seconds
1. Exceeding these limits may cause permanent damage
to the chip
Anode
Full Area Cathode
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
Low Capacitance PIN Specification @ TAMB = +25°C
Part Number
Max. Rev.
Voltage3
VR <10 µA
VDC
Max.
Cap.
1 MHz
Cj @ -10 V
pF
Max.
Series Res.
500 MHz
RS @ 10 mA
Ω
Nominal Characteristics
Carrier
Lifetime1
TL
ηS
Reverse
Recovery
Time 2
TRR
ηS
I Region
Length
μm
Theta
°C/W
Anode
Diameter
± 0.5
mils
Chip
Size
± 0.5
mils
Chip
Thk.
± 0.5
mils
MA4P161-134 100 0.10 1.50 150 15 13 65 3.5 13X13 6
MA4P203-134 100 0.15 1.50 150 25 13 75 3.1 13X13 6
MADP-000165-01340W 200 0.06 2.50 200 20 19 30 1.8 13X13 7
MADP-000135-01340W 200 0.15 1.20 440 44 19 30 3.1 13x13 10
MA4P7493-134 150 0.05 1.80 80 8 19 60 3.8 13X13 6.5
Notes:
1. Nominal carrier life time (TL ) specified at IF = + 10mA , IREV = - 6mA.
2. Nominal reverse recovery time specified at IF = + 20mA , IREV = - 200mA.
3. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10μA.
Attenuator PIN Specification @ TAMB = +25°C
Part Number
Max. Rev.
Voltage2
VR <10 µA
VDC
Max.
Cap.
1MHz
Cj @ -100 V
pF
Max.
Series Res.
100MHz
RS @ 10 mA
Ω
Nominal Characteristics
Carrier
Lifetime1
TL
μS
Series
Res.
100MHz
RS @ 10 μA
Ω
Series
Res.
100MHz
RS @ 1 mA
Ω
I Region
Length
mils
Theta
°C/W
Anode
Diameter
± 0.5
mils
Chip
Size
± 2
mils
Chip
Thk.
± 1
mils
MA47416-132 200 0.15 6 2 2000 30 4 30
7.5 X7.53 19X19 7
MA47418-134 200 0.15 3 1 500 15 2 25 7.5 13X13 7
Notes:
1. Nominal carrier life time (TL) specified at IF = + 10mA, IREV = - 6mA.
2. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10μA.
3. Anode top contact is square.
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
CERMACHIP® PIN Chips Specification @ TAMB = +25°C
Part Number
Max. Rev.
Volt.5
VR < 10 µA
VDC
Unless
otherwise noted
Max. Cap.
1 MHz
CJ @ -100 V
pF
Unless
otherwise noted
Max. Series Res.
100 MHz
RS @ 100 mA
Ω
Nominal Characteristi cs
Carrier
Lifetime4
μS
I Region
Length
μm
Theta
°C/W
Anode
Dia.
± 0.5
mils
Chip
size
± 2.0
mils
Chip
Thk.
± 1.0
mils
MA4P303-134 200 0.15 @ 10 V 1.5 @ 10 mA2 0.3 20 30 3.0 13X13 10.0
MA4P404-132 250 0.20 @ 50 V 0.70 @ 50 mA2 0.6 30 20 6.8 20X20 10.0
MA4P504-132 500 0.20 0.60 1 50 20 6.8 20X20 10.0
MA4P505-131 500 0.35 0.45 2 50 14 13.0 27X27 11.0
MA4P506-131 500 0.70 0.30 3 50 11 15.8 27X27 12.0
MA4P604-131 1000 0.30 1.00 3 90 10 17.0 27X27 13.5
MA4P606-131 1000 0.60 0.70 4 90 8 21.0 32X32 14.0
MA4P607-212 1000 1.30 0.40 12 127 4 37.0 62X62 18.5
MA4PK2000-2231 2000 2.40 0.20 @ 500 mA3 30 230 2 72.0 111X111 21.0
MA4PK3000-12521 3000 2.90 0.25 @ 500 mA3 60 350 1.5 85.0 172X172 28.0
MADP-000488-13740W 900 0.16 @ 50V 1.6 @ 50 mA 4 140 45 12.2 23X23 13.5
Notes:
1. Upon completion of circuit installation, the chip must be covered with a dielectric conformal coating
such as SYLGARD 539® to prevent voltage arcing.
2. Test Frequency = 500 MHz
3. Test Frequency = 4 MHz
4. Nominal carrier lifetime (TL) specified at IF = +10 mA , IREV = - 6 mA.
5. Minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage current (IREV) is
measured to be <10 μA.
Anode
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
Typical Series Resistance vs. Forward Current Performance
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5
MA4PK2000 & MA4PK3000 (2kV & 3kV) Chips
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
6
Package Availability Table
Base Part Number Available ODS Package Styles
MA4P161 None. Use MA4P203 as alternative
MADP-000165 None
MADP-000135 None
MA47416 None
MA47418 None
MA4P203 30, 32, 94, 111, 1056
MA4P303 32, 36, 94, 120, 186, 255, 1088
MA4P404 30, 31, 36, 111, 258,1072T*
MA4P504 30, 120, 144, 186, 255,1072T*
MA4P505 36, 255, 1072T*
MA4P506 30, 31, 36, 255, 258, 1072T*
MA4P604 30, 43, 255, 258
MA4P606 30, 36, 258
MA4P607 43, 296
MA4P709 150
MA4P7493 None
MA4PK2000 1027, 1048,1082,
MA4PK3000 1073,1074,1084,
Package Parasitic Capacitance
Package Style Cap. (pF)
30 0.18
31 0.18
32 0.30
36 0.18
43 0.75
94 0.15
111 0.27
120 0.13
144 0.42
186 0.15
255 0.30
258 0.18
276 0.13
296 0.35
1027 0.80
1048 0.80
1056 0.20
1072 0.16
1073 0.90
1074 0.90
1082 0.80
1084 0.90
1088 0.12
*Note: “T” after the package style number indicates tape and reel.
1072T = 1500pcs/reel
Datasheets for electrical specifications of packaged devices
can be found at :
macomtech.com/datasheets/packagedpindiodes
and for high voltage, high power devices
macomtech.com/datasheets/MA4PK2000_3000_Series
For package outlines refer to web page:
macomtech.com/Content/outlinedrawings
V20
Silicon PIN Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
7
Die Handling and Bonding Information
Handling: All semiconductor chips should be handled with care to avoid damage or contamination
from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is
strongly recommended for the handling and placing of individual components. Bulk handling should
ensure that abrasion and mechanical shock are minimized.
Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS
compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness of < ±0.002”.
Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255oC is
recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be
approximately 290oC. The chip should not be exposed to temperatures greater than 320oC for more
than 10 seconds.
Eutectic Die Attachment Using Reflow Oven: For recommended reflow profile refer to pages 5-7
of Application Note 538 “Surface Mounting Instructions”,
Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive,
silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal
resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to
ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for
1 hour.
Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a
final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either
gold wire or ribbon is recommended. A bonder heat stage temperature setting of 200oC, tool tip
temperature of 150°C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be
used but should be adjusted to the minimum amplitude required to achieve an acceptable bond.
Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or
wedge bonding may also be used.
For more detailed handling and assembly instructions, see Application Note M541, “Bonding
and Handling Procedures for Chip Diode Devices”.
