BFP450 NPN Silicon RF Transistor * For medium power amplifiers 3 * Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz * Transition frequency f T = 24 GHz * Gold metallization for high reliability * SIEGET 25 GHz fT - Line ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP450 Marking ANs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 C 4.5 TA 0 C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 100 Base current IB 10 Total power dissipation1) Ptot 450 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS 96 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 120 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2005-09-29 1 BFP450 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 4.5 5 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 10 A hFE 60 95 130 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 4 V, pulse measured 2005-09-29 2 BFP450 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 18 24 - GHz Ccb - 0.48 0.8 Cce - 1.2 - Ceb - 1.75 - Noise figure F - 1.25 - IC = 10 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum available1) G ma - 15.5 - |S21| 2 8 11.5 - dB IP 3 - 29 - dBm P-1dB - 19 - IC = 90 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base greunded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded dB IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Insertion power gain VCE = 2 V, I C = 50 mA, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output2) VCE = 3 V, I C = 50 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 50 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2005-09-29 3 BFP450 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.13125 24.165 1.5563 13.461 0.70543 2.1659 3.2276 7.5068 0.017655 1.1487 2.6912 0 3 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = fF ps mA V ns - 76.123 0.58905 21.254 0.25878 5.403 0.45346 0.95292 0.69972 0 0.50644 0 0 0.91274 A A V deg F - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.79652 28341 1.2966 0.012292 0.013181 0.50084 0.48672 0.66148 1049.5 0.28285 0.75 1.11 300 fA fA mA V fF V eV K C-E-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 25 fA; N = 1.05 -, RS = 5 All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C CB L BO L BI B B' Transistor Chip E' C' L CI L CO C C'-E'Diode C BE C CE L EI L BI = L BO = L EI= L EO = L CI = L CO = CBE = CCB = CCE = 0.31 0.63 0.2 nH nH nH nH nH nH fF fF fF 0.05 0.29 0.68 208 3.2 213 Valid up to 6GHz L EO E EHA07389 The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent circuit both leads are combined in one electrical connection Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 2005-09-29 4 BFP450 For non-linear simulation: * Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. * If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. * Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: * This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. Transistor Schematic Diagram The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 2005-09-29 5 BFP450 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 500 mW 400 K/W RthJS Ptot 350 300 10 2 250 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 1.2 Ptotmax /PtotDC pF - Ccb D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 0.5 1 1.5 2 2.5 3 V 4 VCB 2005-09-29 6 0 BFP450 Transition frequency fT= (IC) Power gain Gma, Gms , |S 21|2 = (f) f = 1 GHz VCE = 2 V, I C = 50 mA VCE = parameter in V 48 28 GHz dB 24 1.5 22 1 20 0.75 40 36 32 18 G fT 2 to 4 16 0.5 14 Gms 28 24 12 20 10 16 8 12 Gma |S21| 6 8 4 4 2 0 0 20 40 60 80 mA 0 0 120 1 2 3 4 GHz IC f Power gain Gma, Gms = (I C) VCE = 2V Power gain Gma, Gms = (VCE) f = parameter in GHz f = parameter in GHz IC = 50 mA 26 dB 28 dB 0.9 24 22 0.9 22 20 20 18 16 1.8 14 2.4 12 3 10 G G 18 4 8 5 6 6 14 2.4 12 3 10 4 8 5 2 2 40 60 80 mA 6 6 4 20 1.8 16 4 0 0 6 0 0 120 VCE 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 2005-09-29 7 BFP450 Noise figure F = (IC ) Noise figure F = (I C) VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz 4.5 3 dB dB 3.5 3 F F 2 2.5 1.5 2 1 0.5 0 0 1.5 f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 10 20 30 40 50 60 70 1 ZS = 50Ohm ZS = ZSopt 0.5 80 mA 0 0 100 10 20 30 40 50 60 70 IC 80 mA 100 IC Noise figure F = (f) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. frequency VCE = 2 V, I C = 10mA / 50 mA 3 +j50 dB +j25 +j100 +j10 F 2 1.8GHz 0 1.5 10 0.9GHz 25 50 100 2.4GHz 3GHz 1 -j10 IC = 50 mA IC = 10 mA 10mA 50mA 4GHz 0.5 -j25 -j100 -j50 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f 2005-09-29 8 Package SOT343 BFP450 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2005, June Type code BGA420 Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2005-09-29 9 BFP450 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2005-09-29 10