PTFA210701E V4 - Infineon Technologies

Data Sheet 1 of 10 Rev. 02.1, 2009-02-18

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs

designed for single- and dual-carrier WCDMA power amplifier

applications in the 2110 MHz to 2170 MHz band. Features include

input and output matching, and thermally-enhanced packages with

slotted or earless flanges. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA210701E

Package H-36265-2

Thermally-Enhanced High Power RF LDMOS FET

70 W, 2110 – 2170 MHz

Two-carrier WCDMA Drive-up

VDD = 30 V, IDQ

= 550 mA, ƒ = 2140 MHz, 3GPP WCDMA

signal, P/A R = 8 dB, 10 MHz carrier spacing

-60

-55

-50

-45

-40

-35

-30

30 32 34 36 38 40 42 44

Average Output Power (dBm)

IM3 (dBc), ACPR (dBc)

Drain Efficiency (%)

ACPR

Efficiency

IM3

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

VDD = 30 V, IDQ = 550 mA, POUT = 18 W average

ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Unit

Gain Gps 15.5 16.5 —dB

Drain Efficiency ηD28 29 —%

Intermodulation Distortion IMD —–36.5 –35.5 dBc

PTFA210701F

Package H-37265-2

Features

•Thermally-enhanced packages, Pb-free and

RoHS-compliant

•Broadband internal matching

•Typical two-carrier WCDMA performance at

2140 MHz, 30 V

- Average output power = 42 dBm

- Linear Gain = 16.5 dB

- Efficiency = 27.0%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –42.5 dBc

•Typical CW performance, 2170 MHz, 30 V

- Output power at P–1dB = 80 W

- Efficiency = 58%

•Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•Excellent thermal stability, low HCI drift

•Capable of handling 10:1 VSWR @ 30 V,

70 W (CW) output power

*See Infineon distributor for future availability.

Data Sheet 2 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

*See Infineon distributor for future availability.

RF Characteristics (cont.)

Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 30 V, IDQ = 550 mA, POUT = 70 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps —16.5 —dB

Drain Efficiency ηD—41 —%

Intermodulation Distortion IMD —–29.5 —dBc

DC Characteristics

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.125 —Ω

Operating Gate Voltage VDS = 30 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD190 W

Above 25°C derate by 1.09 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 70 W CW) RθJC 0.92 °C/W

Ordering Information

Type and Version Package Type Package Description Marking

PTFA210701E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210701E

PTFA210701F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210701F

Data Sheet 3 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Broadband Performance

VDD = 30 V, IDQ = 550 mA, POUT = 42.5 dBm

2070 2090 2110 2130 2150 2170 2190 2210

Frequency (MHz)

Gain (dB), Efficiency (%)

-35

-30

-25

-20

-15

-10

-5

Input Return Loss (dB)

Gain

Efficiency

Return Loss

Two-tone Drive-up at Optimum IDQ

VDD = 30 V, IDQ = 550 mA,

ƒ = 2140 MHz, tone spacing = 1 MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

35 37 39 41 43 45 47 49

Output Power, PEP (dBm)

Drain Efficiency (%)

IM5

Efficiency

IM7

IM3

Intermodulation Distortion (dBc)

Typical Performance (data taken in a production test fixture)

Power Sweep, CW Conditions

VDD = 30 V, IDQ = 550 mA, ƒ = 2170 MHz

020 40 60 80 100

Output Power (W)

Gain (dB)

Drain Efficiency (%)

Gain

Efficiency

TCASE = 25°C

TCASE = 90°C

Two-carrier WCDMA at Selected Biases

VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,

P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ

-60

-55

-50

-45

-40

-35

-30

30 32 34 36 38 40 42 44

Average Output Power (dBm)

3rd Order IMD (dBc)

500 mA

550 mA

450 mA

650 mA

600 mA

Data Sheet 4 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Intermodulation Distortion Products

vs. Tone Spacing

VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz,

POUT = 48.5 dBm PEP

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30 35 40

Tone Spacing (MHz)

Intermodulation Distortion (dBc)

3rd order

5th

7th

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20 0 20 40 60 80 100

Case Temperature (°C)

Normalized Bias Voltage (V)

0.15 A

0.44 A

0.73 A

1.10 A

2.20 A

3.30 A

4.41 A

5.51 A

Voltage Sweep

IDQ = 550 mA, ƒ = 2140 MHz,

tone spacing = 1 MHz, POUT (PEP) = 48.5 dBm

-45

-40

-35

-30

-25

-20

-15

-10

-5

23 25 27 29 31 33

Supply Voltage (V)

3rd Order IMD (dBc)

Gain

Efficiency

IM3 Up

Gain (dB), Drain Efficiency (%)

Single-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz,

3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,

P/A R = 8.5 dB, 3.84 MHz BW

-55

-50

-45

-40

-35

-30

30 32 34 36 38 40 42 44

Average Output Power (dBm)

Drain Efficiency (%)

Adjacent Channel Power Ratio (dB)

Efficiency

ACPR

ACPR Up

ACPR Low

Typical Performance (cont.)

Data Sheet 5 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

Broadband Circuit Impedance

Z Source Z Load

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

2060 19.94 1.61 4.50 –2.87

2110 20.94 0.77 4.20 –2.50

2140 21.41 0.11 4.02 –2.29

2170 21.83 –0.69 3.88 –2.07

2220 22.26 –2.09 3.66 –1.66

0.1

0.3

0.5

0.2

0.4

0.1

2220 MHz

2060 MHz

2220 MHz

Z Source

Z Load

Z0 = 50 Ω

See next page for circuit information

Data Sheet 6 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

a210701e_sch

RF_OUT

RF_IN

DUT

VDD

2K V

0.001µF

BCP56

1.3K V

QQ1

LM7805

0.001µF

10 V

2K V

1.2KV

C10

10pF

0.8pF

l10

10 V

1µF

0.1µF

10µF

35V

0.01µF

5.1K V

10pF

1K V

C11

1.3pF

l3l4l5l6l7

C12

10pF

C14

1µF

C13

0.02µF

C15

100µF

50V

C23

0.5pF

C22

0.5pF C25

10pF

C16

0.1µF

C24

0.8pF

l11 l12 l13 l14

C17

10pF

C20

100µF

50V

C18

0.02µF

C19

1µF C21

0.1µF

VDD

l2l1l15 l16

Reference Circuit

Reference circuit schematic for ƒ = 2140 MHz

Circuit Assembly Information

DUT PTFA210701E or PTFA210701F LDMOS Transistor

PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper

Microstrip Electrical Characteristics at 2140 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.112 λ, 50.0 Ω9.53 x 1.78 0.375 x 0.070

l20.053 λ, 50.0 Ω4.52 x 1.78 0.178 x 0.070

l30.044 λ, 43.0 Ω3.73 x 2.18 0.147 x 0.086

l40.054 λ, 43.0 Ω4.57 x 2.18 0.180 x 0.086

l50.016 λ, 43.0 Ω1.37 x 2.18 0.054 x 0.086

l60.022 λ, 14.6 Ω1.73 x 8.76 0.068 x 0.345

l70.062 λ, 12.2 Ω4.88 x 10.82 0.192 x 0.426

l80.214λ, 61.0 Ω18.36 x 1.22 0.723 x 0.048

l9, l10 0.211 λ, 53.0 Ω17.91 x 1.57 0.705 x 0.062

l11 0.042 λ, 6.5 Ω3.25 x 21.84 0.128 x 0.860

l12 (taper) 0.043 λ, 6.5 Ω / 16.2 Ω3.30 x 21.84 / 7.80 0.130 x 0.860 / 0.307

l13 (taper) 0.023 λ, 16.2 Ω / 50.0 Ω1.88 x 7.80 / 1.57 0.074x 0.307 / 0.062

l14 0.010 λ, 53.0 Ω0.89 x 1.57 0.035 x 0.062

l15 0.130 λ, 53.0 Ω11.07 x 1.57 0.436 x 0.062

l16 0.116 λ, 53.0 Ω9.88 x 1.57 0.389 x 0.062

1Electrical characteristics are rounded.

Data Sheet 7 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

RO4350_.030

A210701in_01

RO4350_.030

A210701out_01

RF_IN RF_OUT

QQ1

C6 C16

R6 C12

C15

C7 C8

C10

C11

C13

C14

C25

C24

C22

C23

C21

C20

C19

C18

C17

a210701e_assy

VDD

Reference circuit assembly diagram (not to scale)*

Reference Circuit (cont.)

Component Description Suggested Manufacturer P/N or Comment

C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND

C5, C16, C21 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND

C6, C14, C19 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND

C7 Capacitor, 0.01 µF ATC 200B 103

C8, C10, C12, C17, C25 Ceramic capacitor, 10 pF ATC 100B 100

C9, C24 Ceramic capacitor, 0.8 pF ATC 100B 0R8

C11 Ceramic capacitor, 1.3 pF ATC 100B 1R3

C13, C18 Capacitor, 0.02 µF ATC 200B 203

C15, C20 Electrolytic capacitor, 100 µF, 50 VDigi-Key PCE3718CT-ND

C22, C23 Ceramic capacitor, 0.5pF ATC 100B 0R5

L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2

Q1 Transistor Infineon Technologies BCP56

QQ1 Voltage regulator National Semiconductor LM7805

R1 Chip resistor 1.2K ohms Digi-Key P1.2KGCT-ND

R2 Chip resistor 1.3K ohms Digi-Key P1.3KGCT-ND

R3 Chip resistor 2K ohms Digi-Key P2KECT-ND

R4 Potentiometer 2K ohms Digi-Key 3224W-202ETR-ND

R5, R9 Chip resistor 10 ohms Digi-Key P10ECT-ND

R6, R7 Chip resistor 1K ohms Digi-Key P1KECT-ND

R8 Chip resistor 5.1K ohms Digi-Key P5.1KECT-ND

*Gerber Files for this circuit available on request

Data Sheet 8 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

20.31

[.800]

10.16±0.25

[.400±.010]

FLANGE 9.78

[.385]

2x 7.11

[.280]

2X 7.11

[.280]

15.23

[.600]

4X R1.52

[R.060]

(45° X 2.03

[.080])

LID 10.16±0.25

[.400±.010]

0.0381 [.0015] -A-

3.56±0.38

[.140±.015

1.02

[.040]

SPH 1.57

[.062]

2007-11-16_h-36+37265_POs.vsd_h-36265-2

2X R1.60

[R.063]

15.34±0.51

[.604±.020]

2.59±0.51

[.102±.020]

Package Outline Specifications

Package H-36265-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 9 of 10 Rev. 02.1, 2009-02-18

PTFA210701E

PTFA210701F

Confidential, Limited Internal Distribution

071119_h-36+37265_POs_h-37265-2

(45° X 2.03

[.080])

2.59±0.51

[.102±.020]

LID 10.16±0.25

[.400±.010]

FLANGE 10.16

[.400]

2X 7.11

[.280]

LID

10.16±0.25

[.400±.010]

10.16

[.400]

1.02

[.040]

3.56±.38

[.140±.015]

SPH 1.57

[.062]

10.16

[.400]

15.34±.51

[.604±.020]

FLANGE

4X R0.63

[R.025] MAX

|0.025 [.001]|-A-

Package Outline Specifications (cont.)

Package H-37265-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 10 of 10 Rev. 02.1, 2009-02-18

PTFA210701E/F

Confidential, Limited Internal Distribution

Revision History: 2009-02-18 Data Sheet

Previous Version: 2007-11-01, Data Sheet

Page Subjects (major changes since last revision)

1, 2, 8, 9 Update product to V4, with new package technologies.

7Fixed typing error

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@infineon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2009-02-18

Published by

Infineon Technologies AG

81726 Munich, Germany

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The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of

any third party.

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For further information on technology, delivery terms and conditions and prices, please contact the nearest

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question, please contact the nearest Infineon Technologies Office.

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