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Page <1> V1.022/10/12
PNP Medium Power Transistor
Features:
• PNP Silicon Power Switching Transistors
• Medium Power Amplier and Switching Applications
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specied)
Characteristic Symbol BC160-16 BC161-16 Unit
Collector Emitter Voltage VCEO 40 60 V
Collector Base Voltage VCBO
Emitter Base Voltage VEBO 5
Collector Current Continuous IC1 A
Power Dissipation at Ta = 25°C
Derate above 25°C PD
0.8
4.57 W
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
4
22.73
Operating Storage Temperature Range Tj, Tstg -65 to +200 °C
Thermal Resistance
Junction to Ambient in Free Air Rth(j-a) 219 °C/W
Junction to Case Rth(j-c) 44
Pin Conguration
1. Emitter
2. Base
3. Collector
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Page <2> V1.022/10/12
PNP Medium Power Transistor
Parameter Symbol Test Condition Min. Typ. Max. Unit
Collector Emitter Voltage
VCES
IC = 100μA, VBE = 0
BC160-16
BC161-16
40
60
-
-
V
*VCEO
IC = 30mA, IB = 0
BC160-16
BC161-16
40
60
Emitter Base Voltage VEBO IE = 100μA, IC = 0 5 -
Collector Cut off Current ICES
VCE = 40V, VBE = 0, BC160-16
VCE = 60V, VBE = 0, BC161-16
-
100
100 nA
Ta = 150ºC
VCE = 40V, VBE = 0, BC160-16
VCE = 60V, VBE = 0, BC161-16
100
100
μA
DC Current Gain *hFE
IC = 100mA, VCE = 1V
BC160-16/BC161-16
Group-6
Group-10
Group-16
40
40
63
100
400
100
160
250 -
IC = 1A, VCE = 1V
BC160-16/BC161-16
Group-6
Group-10
Group-16 -
26
15
20
30
-
Collector Emitter Saturation Voltage *VCE(sat) IC = 1A, IB = 0.1A
-
1
V
Base Emitter on Voltage *VBE(on) IC = 1A, VCE = 1V 1.7
Dynamic Characteristics
Transition Frequency fTIC = 50mA, VCE = 10V, f = 20MHz 50
-
- MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz
-
30
pF
Input Capacitance Cib VEB = 10V, IC = 0, f = 1MHz 180
Switching Characteristics
Turn On Time ton IC = 150mA, IB1 = 5μA
- -
500
ns
Turn Off Time toff IC = 100mA, IB1 = IB2 = 5μA 650
Electrical Characteristics:
(Ta = +25°C unless otherwise specied)
*Pulsed : Pulse Duration ≤300μs, Duty Cycle ≤1%
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Page <3> V1.022/10/12
PNP Medium Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Description Part Number
Transistor, PNP, TO-39 BC160-16
BC161-16
Part Number Table
TO-39 Metal Can Package
Dimensions : Millimetres
Dim. Min. Max.
A 8.5 9.39
B 7.74 8.5
C 6.09 6.6
D 0.4 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.7 -
L 42° 48°
Pin Conguration
1. Emitter
2. Base
3. Collector
