yy SGS-THOMSON MICROELECTROMIGS TYN 204 ---> TYN 1004 SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT A Pa K = HIGH STABILITY AND RELIABILITY G DESCRIPTION The TYN 204 ---> TYN 1004 Family of Silicon Con- trolled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled se . : : TO220AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(AMS) RMS on-state current Te = 115C 4 A (180 conduction angle) IT(AV) Average on-state current Te = 115C 2.5 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current ip =83 ms 63 A ( Tj initial = 25C ) tp = 10 ms 60 it I2t value tp = 10 ms 18 A2s di/dt Critical rate of rise of on-state current 100 A/us Gate supply :iqG=100mA dig/dt = 1 Aus Tstg Storage and operating junction temperature range - 40 to+ 150 C Ti - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 C from case Symbol Parameter TYN Unit 204 404 604 804 1004 VDRM Repetitive peak off-state voitage 200 400 600 800 1000 Vv VRRM Tj = 125C March 1995 1/4 > WM 7929237 0076577 90 TYN 204 ---> TYN 1004 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) [Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC 2.5 C/W GATE CHARACTERISTICS (maximum values) Pg (AV)= 1W PG = 10W (tp = 20 us) IrFGm=4A (p= 20 us) VAGM= 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V (DC) RL=330 Tj=25C MAX 15 mA VGT Vp=12V (DC) AL=33a Tj=25C | MAX 15 Vv VGD VD=VDRM RL=3.3kQ Tj= 110C | MIN 0.2 Vv tgt VD=VDRM_ IG = 40mA Tj=25C TYP 2 us dig/dt = 0.5A/ys IL Ig= 1.2 IeT Tj=25C | TYP 50 mA IH lr= 100mA = gate open Tj=25C MAX 30 mA VTM ITM= 8A _ tp= 380ys Tj=25C MAX 1.8 Vv IDRM VporRu_ Rated Tj=25C MAX 0.01 mA lRRM VaRM Rated Te 110C 3 dviat Linear slope up to Vp=67%VpRM Tj= 110C | MIN 200 Vius gate open tq Vp=67%VDRM 'TM=8A_ VR= 25V Tj= 110C | TYP 70 BS ditwdt=30 A/us dVp/dt= 50V/us 2/4 > MM 792923? 0076578 So? ST SGS-THOMSON ANSROE. ECT MIES Fig.1 : Maximum average power dissipation versus average on-state current. P (Ww) 5 1 T 360 | 4 LL \ | oe LY Dc 3 and OQ = 480-4 Of- 120 2 = 90" 1 Oy = 60 \.! a- 30 Iavy'A) bo 05 10 15 20 25 3.0 35 4.0 Fig.3 : Average on-state current versus case temperature. IycavylA) \ i = 18h \ 1 \ Tcase (C) \ % 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current versus junction temperature. TYN 204 ---> TYN 1004 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tease (C) 5 4 F115 : S| cy = 180 3 Ath |S e N 115 on \ 2 10CAW = 15C N\ \ | -120 1 N \ Tamb (C) NY 0 : W425 0 20 40 60 80 100 120 140 Fig.4 : Relativa variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.4 Zth(j-a tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1&+2 5&+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Igtl Tj] eIhiTj] lrg (A) Igtiti=25C) Th Ti-25 TC) 10 25 Ti initial = 25C \ 60 2 50 1.5-> at 40 ct LN 1 ~ Sal 30 = 1 ih Sr mL . tH 20 FS 05 | | PP ya 5 T_T Th T] (C) 107 Number of cycles oO ot 0 Lp Tie ti | -40-90-20-10 0 10 20 30 40 50 BO 70 80 90 100110 1 10 100 1000 3/4 iss SGS-THOMSON SF icroescronics > MM 7929e3? 0076579 4b3 TYN 204 ---> TYN 1004 Fig.7 : Non repetitive surge peak on-state current for a Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of lt. Itsm (A). 1t (A's) lr fA) 100 Tj initial = 25C Tj initial 26C ITSM 100 10 = Tj max Vto = 1.25V RE -0.057 0 Virm(v) 10 1 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic Cooling method : Recommended torque value : 0.8 m.N. Marking : type number Maximum torque value : 1 m.N. Weight :2.3g Information fumished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of S@S-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 &57 SGS:THOMSON ANSROE. BETES Me 7929237 0076580 145