Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
BCW72LT1/D
BCW72LT1G, SBCW72LT1G
General Purpose Transistor
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 45 Vdc
Collector−Base Voltage VCBO 50 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−23
(TO−236)
CASE 318−08
STYLE 6
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BCW72LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
K2 M G
G
K2 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SBCW72LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
BCW72LT1G, SBCW72LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
V(BR)CEO
45 − −
Vdc
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, VEB = 0)
V(BR)CES
45 − −
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
50 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0 − −
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 100C)
ICBO
−
−
−
−
100
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
200 −450
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 50 mAdc, IB = 2.5 mAdc)
VCE(sat)
−
−
−
0.21
0.25
−
Vdc
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 2.5 mAdc)
VBE(sat)
−0.85 −
Vdc
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6 −0.75
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
−300 −
MHz
Output Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cobo
− − 4.0
pF
Input Capacitance
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Cibo
−9.0 −
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
Figure 1. Turn−On Time Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2% +10.9 V
-0.5 V
<1.0 ns
10 < t1 < 500 ms
DUTY CYCLE = 2% +10.9 V
0
-9.1 V < 1.0 ns
t1
BCW72LT1G, SBCW72LT1G
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3
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100 mA
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
RS
10 mA
300 mA
IC = 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (mA)
500k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
RS, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF +20 log10 ǒen2)4KTRS)In2RS2
4KTRSǓ1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10−23 j/K)
= Temperature of the Source Resistance (K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB 10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB 3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
BCW72LT1G, SBCW72LT1G
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4
TYPICAL STATIC CHARACTERISTICS
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
TJ = 125C
-55C
25C
VCE = 1.0 V
VCE = 10 V
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 10. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1 0.2 0.5
Figure 11. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.002
TJ = 25C
IC = 1.0 mA 10 mA 100 mA
Figure 12. Temperature Coefficients
50 mA
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
IC, COLLECTOR CURRENT (mA)
TA = 25C
PULSE WIDTH = 300 ms
DUTY CYCLE 2.0%
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
*APPLIES for IC/IB hFE/2
25C to 125C
-55C to 25C
25C to 125C
-55C to 25C
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0-2.4
0.8
0
-1.6
-0.8
1.0 2.0 5.0 10 20 50 10
0
0.1 0.2 0.5
200
100
80
V, TEMPERATURE COEFFICIENTS (mV/ C)
BCW72LT1G, SBCW72LT1G
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5
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 13. Turn−On Time
IC, COLLECTOR CURRENT (mA)
300
Figure 14. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
2.0 5.0 10 20 30 50
1000
Figure 15. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 16. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.01.0
500
0.5
10
t, TIME (ns)
t, TIME (ns)
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
T
h , OUTPUT ADMITTANCE ( mhos)
oe m
hie, INPUT IMPEDANCE (k )
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0 70 100
VCC = 3.0 V
IC/IB = 10
TJ = 25C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0 5.0 10 20 30 50
3.01.0 7.0 70 100
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
tf
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
TJ = 25C
f = 1.0 MHz
Cib
Cob
2.0 5.0 10 20 50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1 0.2 0.5
hfe 200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
2.0 5.0 10 20 50
1.0
2.0
100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1 0.2 0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
hfe 200 @ IC = 1.0 mA
BCW72LT1G, SBCW72LT1G
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6
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
100k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (C)
104
-4
0
IC, COLLECTOR CURRENT (nA)
Figure 20.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 19 by the
steady state value RqJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C.
For more information, see AN−569.
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
10-2
10-1
100
101
102
103
-2
0
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150C
100 ms
BCW72LT1G, SBCW72LT1G
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BCW72LT1/D
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